| BAV170 |  | Diodes Incorporated | Introducing Very Low Leakage SOT-23 Diodes: | Original | PDF | 44.03KB | 2 | 
| BAV170 |  | Diodes Incorporated | DUAL SURFACE MOUNT LOW LEAKAGE DIODE | Original | PDF | 77.23KB | 4 | 
| BAV170 |  | Galaxy Semi-Conductor Holdings | Low-leakage double diode | Original | PDF | 170.16KB | 4 | 
| BAV170 |  | Infineon Technologies | Silicon Low Leakage Diode Array | Original | PDF | 40.59KB | 4 | 
| BAV170 |  | Infineon Technologies | Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns; | Original | PDF | 70.69KB | 6 | 
| BAV170 |  | Kexin | Low Leakage Double Diodes | Original | PDF | 36.74KB | 2 | 
| BAV170 |  | NXP Semiconductors | BAV170 - Low-leakage double diode - Cd max.: 2 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V | Original | PDF | 74.42KB | 9 | 
| BAV170 |  | PanJit Semiconductors | SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES | Original | PDF | 94.27KB | 3 | 
| BAV170 |  | Philips Semiconductors | High-speed switching diode | Original | PDF | 57.52KB | 8 | 
| BAV170 |  | Philips Semiconductors | Low-leakage double diode | Original | PDF | 54.91KB | 8 | 
| BAV170 |  | Philips Semiconductors | Low-Leakage Double Diode | Original | PDF | 59.4KB | 12 | 
| BAV170 |  | Siemens | Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) | Original | PDF | 100.48KB | 4 | 
| BAV170 |  | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | PDF | 465.63KB | 37 | 
| BAV170 |  | TY Semiconductor | Low Leakage Double Diodes - SOT-23 | Original | PDF | 92.2KB | 2 | 
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| BAV170 |  | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | PDF | 83.96KB | 1 | 
| BAV170,215 |  | NXP Semiconductors | Low-leakage double diode - Cd max.: 2 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | PDF | 74.55KB | 9 | 
| BAV170235 |  | NXP Semiconductors | RECTIFIER DIODE, 2 ELEMENT, 0.21 | Original | PDF | 313.07KB |  | 
| BAV170-7-F |  | Diodes Incorporated | Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 85V 125MA SOT23 | Original | PDF |  | 4 | 
| BAV170-7-F |  | Diodes Incorporated | DUAL SURFACE MOUNT LOW LEAKAGE DIODE | Original | PDF | 70.44KB | 3 | 
| BAV170-7-F-52 |  | Diodes | Switching Standard Diode SOT23 T | Original | PDF | 82.65KB | 4 |