JSS DIODE Search Results

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

marking JSs

Abstract: Q62702-A376 Marking code jSs JSs diode
Contextual Info: Silicon Switching Diode Array BAW 100 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

VPS05178

Abstract: baw100
Contextual Info: BAW 100 Silicon Switching Diode Array 3 • For high-speed switching applications • Electrical insulated diodes 4 2 1 VPS05178 3 2 4 1 EHA00006 Type Marking BAW 100 JSs Pin Configuration 1 = A1 2 = A2 3 = C2 Package 4 = C1 SOT-143 Maximum Ratings Parameter

C2C36

Abstract: VPW09197 BAS21U SC74
Contextual Info: BAS21U Silicon Switching Diode Array 5 4 6
For high-speed switching applications
Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

BAS 20 SOT23

Abstract: DIODE BAS 21 sot-23 JSs
Contextual Info: BAS 19 . BAS 21 Silicon Switching Diodes 3
High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C

BAS21

Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

OEN relays

Abstract: led free 68-24-2AE diode DIN 12VDC30A 192 1C 12 single pole 24 vdc 110vac BSP 280 112502 JSs diode
Contextual Info: CLASSIFICATION MODEL UNIT STYLE DIMENSION WEIGHT II SIGNAL RELAYS 42 46 52 56 PC PC PC DIP PC DIP 20 x 7.2 x 7.5 20.5x12x16 15.5x11 gms X 11.5 20.2x9.9x12 HERMETICALLY SEALED RELAYS SIGNAL RELAYS 3.5 77 36 PC POWER RELAYS 30 43 61 65 PC/Solder Hook/Plug in

Contextual Info: Product specification BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e

smd JSs diode

Abstract: smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p
Contextual Info: Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e

ci pc 123

Abstract: amar EP05Q06 DIODE SS-35 ISAO
Contextual Info: SCHOTTKY BARRIER DIODE EP05Q06 o . s a /6 0 v FEATURES OJEDEC SOD-123 Package o V ery Low profile 1.1mm M ax o High Surge Capability o Low T herm al Resistance OUL 94, VO o Packaged in 8mm tape Device M arking “ “ ^ Month of Mfg. A =Jan. B = Feb.—L=Dec.

1SS254

Contextual Info: 3* < K/Diodes 1SS252/ 1SS253/ 1SS254 1SS252/1SS253/1SS254 v U =i > 1 1 :2 * v 7 ^7° U - tM M M M * < "J 9 > 7 0 f t h 7 $ - 2'< * - K Silicon Epitaxial Planar High-Speed Switching Ultra-Mini Diodes • 2 'J\ f -y 3- 'PW SSftAA ''nJibT:' fo \H £ |2 l/D im e n s io n s U n it: mm)

2SK1925

Contextual Info: Ordering n u m b er: EN4 3 1 4 2SK1925 No.4314 N-Channel MOS Silicon FjET SAXYO Very High-Speed Switching Applications 1 Features • Low ON resistance. • Very high-speed switching. • High-speed diode trr = 150ns . bsolute Maximum Ratings at Ta = 25°C

Contextual Info: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is

Contextual Info: PD 9.1608C International IG R Rectifier IR L 3 1 0 3 D 1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged H EX FE T Power M O SFET Vdss= 30V and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application

Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4 Ö 5 5 4 5 2 D Q l T Z M b 2bM PD-2.323 International [iorj Rectifier m br 3035c t m br 3045c t SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Characteristics lF AV Rectangular Description/Features MBR30-CT Units

br 003 m 527

Abstract: IRFY240 K120
Contextual Info: IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL VALUE UNITS D rain-Source V oltage V ds 200 V G ate-Source V oltage

Contextual Info: Back to FETs NESY130 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage

2SK1730

Contextual Info: 2SK1730 <#► LD L o w D rive S eries V DSs = 3 0 V 2087 N Channel Power M OSFET 1E >3825 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. ■M eets radial taping. b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

Contextual Info: FU JI 2SK2019-01 N-channel MOS-FET ö lL ,@ E lT L ß U E FAP-IIA Series 500V 3,5A 40W > Outline Drawing > Features - 3Q. High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications

DALLAS DS

Contextual Info: F U J I 0,07£2 60V 20A 45W > Outline Drawing > Features - N-channel MOS-FET 2 S K 1 8 8 1 -L ,S F-lll Series High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control General Purpose Power Amplifier

2SK2528-01

Abstract: LFT 5A
Contextual Info: FU JI 2SK2528-01 N-channel MOS-FET ö ü J M e ir u ö L J K FAP-II Series 900V 3 ,6 Q 5A 80W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications

Contextual Info: F U JI lä'mälEiruäLte 2SK2521 -01 N-channel MOS-FET FAP-II Series 200V 18A 50W > Outline Drawing > Features - 0 ,1 8 Q High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications

Contextual Info: 2SK2760-01 FU JI SILSKLrtJiaJG FAP-IIS Series N-channel MOS-FET 600V 9A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 > Applications - 0.6 Switching Regulators

TD62054F

Abstract: Cu50 probe
Contextual Info: TD62064F, TD62074F BIPOLAR DIGITAL INTEGRATED C IR C U IT SILICO N M O NO LITHIC TD620 6 4 F HIGH C U R RENT DARLINGTON DRIVER TD62 0 7 4 F ISOLATED DARLINGTON DRIVER Unit in mm HflflRFjP iR H R B FEATURES • Output Current . 1. 5A Max.