JSS DIODE Search Results

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

marking JSs

Abstract: Q62702-A376 Marking code jSs JSs diode
Contextual Info: Silicon Switching Diode Array BAW 100 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

marking JSs

Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

VPS05178

Abstract: baw100
Contextual Info: BAW 100 Silicon Switching Diode Array 3 • For high-speed switching applications • Electrical insulated diodes 4 2 1 VPS05178 3 2 4 1 EHA00006 Type Marking BAW 100 JSs Pin Configuration 1 = A1 2 = A2 3 = C2 Package 4 = C1 SOT-143 Maximum Ratings Parameter

Contextual Info: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch Type M arking O rdering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin C onfigu ratio n Package1) 1 r^ i 3 o-^ 1 -o

F740LC

Abstract: 1RF740 IRF740LC IRF1010 Marking code jSs KAH marking ScansUX36 Ultra High Voltage Hexfets
Contextual Info: PD-9.1068 International 1QR Rectifier IRF740LC HEXFET Pow er M u s t - 1 i • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30V V gs Rating w n tiu u u t;u o jss, ^ dss ~ 400V '-'OSS, v-/rss • Extremely High Frequency Operation

30BQ040

Abstract: 40HFL40S02
Contextual Info: PD - 2.439 International S Rectifier 30BQ040 SCHOTTKY RECTIFIER 3 Amp Major Ratings and Characteristics Description/Features Characteristics 30BQ040 Units lF AV R ectangular 3.0 A 40 V 2000 A w aveform V RRM ' f SM 1 @ tP =5|JSS ine T he 30BQ040 surface m ount S chottky rectifier has been

Contextual Info: SIEM ENS S ilic o n S w itc h in g D io d e A rray B A W 100 ♦ • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 o- KJ- o

C2C36

Abstract: VPW09197 BAS21U SC74
Contextual Info: BAS21U Silicon Switching Diode Array 5 4 6
For high-speed switching applications
Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

BAS20 SOT23

Abstract: bas21 jss BAS19 BAS20 BAS21
Contextual Info: BAS19.BAS21 3 Silicon Switching Diodes
High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings

BAS 20 SOT23

Abstract: DIODE BAS 21 sot-23 JSs
Contextual Info: BAS 19 . BAS 21 Silicon Switching Diodes 3
High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C

2SK611

Abstract: 2SK611Z 611-Z
Contextual Info: MOS FIELD EFFECT POWER TRANSISTOR 2S K 611-Z FAST SW ITCHING N-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS • in millimeters Suitable fo r sw itch ing pow er supplies, actuater c ontrols, and pulse circuits. • L o w C jSS •

SC74

Abstract: JSs diode
Contextual Info: BAS 21U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74

Contextual Info: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch T yp e M arking O rdering C o d e tape and reel B A S 19 B A S 20 BAS 21 JPs JR s JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin Configuration P a ck a g e1» 1-^ IsJ-0

marking JSs

Abstract: bas21 BAS21 SOD323
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

BAS21 SOD323

Abstract: marking JSs BAS21 BAS21 SOT23 Marking code jSs BAS21U JSs marking code 65 marking sot23 marking code ag BAR63-03W
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking BAS21 BAS21-03W BAS21U SOT23 SOD323 SC74 single single parallel triple

BAS21

Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

Marking code jSs

Abstract: BAS21 SOD323 BAS21 JSs marking code BAS21 SOT23 bas21 infineon BAS21-03W BAS21U BCW66H SC74
Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! ,     " # , , ! ! Type Package Configuration Marking

Contextual Info: BAS21. Silicon Switching Diode • For high-speed switching applications • High breakdown voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS21 BAS21-03W BAS21U $ ! " # ,  , , !    ! Type Package Configuration Marking

OEN relays

Abstract: led free 68-24-2AE diode DIN 12VDC30A 192 1C 12 single pole 24 vdc 110vac BSP 280 112502 JSs diode
Contextual Info: CLASSIFICATION MODEL UNIT STYLE DIMENSION WEIGHT II SIGNAL RELAYS 42 46 52 56 PC PC PC DIP PC DIP 20 x 7.2 x 7.5 20.5x12x16 15.5x11 gms X 11.5 20.2x9.9x12 HERMETICALLY SEALED RELAYS SIGNAL RELAYS 3.5 77 36 PC POWER RELAYS 30 43 61 65 PC/Solder Hook/Plug in

Contextual Info: Product specification BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e

smd JSs diode

Abstract: smd JSs smd JSs 75 marking JSs BAW100 smd JS smd JSs 85 smd JS p
Contextual Info: Diodes SMD Type Silicon Switching Diode Array BAW100 Unit: mm Features For high-speed switching Electrically insulated diodes A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it VR 75 V R e v e r s e v o lt a g e P e a k r e v e r s e v o lt a g e

ci pc 123

Abstract: amar EP05Q06 DIODE SS-35 ISAO
Contextual Info: SCHOTTKY BARRIER DIODE EP05Q06 o . s a /6 0 v FEATURES OJEDEC SOD-123 Package o V ery Low profile 1.1mm M ax o High Surge Capability o Low T herm al Resistance OUL 94, VO o Packaged in 8mm tape Device M arking “ “ ^ Month of Mfg. A =Jan. B = Feb.—L=Dec.

1SS254

Contextual Info: 3* < K/Diodes 1SS252/ 1SS253/ 1SS254 1SS252/1SS253/1SS254 v U =i > 1 1 :2 * v 7 ^7° U - tM M M M * < "J 9 > 7 0 f t h 7 $ - 2'< * - K Silicon Epitaxial Planar High-Speed Switching Ultra-Mini Diodes • 2 'J\ f -y 3- 'PW SSftAA ''nJibT:' fo \H £ |2 l/D im e n s io n s U n it: mm)