4AS5455 Search Results

Contextual Info: PD - 9.1672A International IS R Rectifier IRFZ34E HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling D escription Voss= 60V

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

Contextual Info: International e ?r R ectifier HEXFET P o w e r M O S F E T • • • • • 4655452 0015175 b^O H I N R PD-9.646A IRFI830G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating

IRK.L240

Abstract: UL1385 46S545B ci 94vo D326 d327 d331 D325 L240 7850AR
Contextual Info: 48 554 52 DDlfc,7Tß 2ÔT International 1@I]Rectifier SERIES IRK.L240 FAST RECOVERY DIODES Features I INR NEW MAGN-A-pak Power Modules INTERNATIONAL RECTIFIER b5E Fast recovery time characteristics Electrically isolated base plate Industrial standard package

S77R14A

Abstract: S77R12B hockey stat sheet TQ 5100 HTG 7000 S77R10B S77R16A 5L02
Contextual Info: Q 2 d Ë I m û SSMSS D DD?aai IN T E R N A T IO N A L R E C T IF IE R IO R 4855452 S ï INTERNATIONAL R E C T IF IE R Data Sheet No. PD-3.114 02E 07821 D S77R SERIES 1600-1000 VOLTS RANGE 5100 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs

Contextual Info: International S Rectifier 4Ö5SMS2 GQlS'ìTG D?S IRLR120 IRLU120 HEXFET Power M O S FE T • • • • • • • PD-9.636A IINR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRLR120 Straight Lead (IRLU120) Available in Tape & Reel Logic-Level Gate Drive

Contextual Info: PD 9.1608C International IG R Rectifier IR L 3 1 0 3 D 1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged H EX FE T Power M O SFET Vdss= 30V and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application

Contextual Info: 48 554 52 DDlfc,7Tß 2ÔT International 1@I]Rectifier SERIES IRK.L240 FAST RECOVERY DIODES Features I INR NEW MAGN-A-pak Power Modules INTERNATIONAL RECTIFIER b5E Fast recovery time characteristics Electrically isolated base plate Industrial standard package

Contextual Info: Data Sheet No. PD-9.437B I« R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs The HEXFET® technology is the key to International

CPX234A

Abstract: CPX233A CPX234 CPX200 CPX253A CPX254A IRFC44 IRFC234 SS455 IRFC440
Contextual Info: INTERNATIONAL RECTIFIER SbE D 4055*452 OOIGMSI 2 • Data Sheet No. PD-5.017C ~ r - 3 ï- & n International k»1Rectifier HEXFET Power Module C P X 200 Serles Power H-Bridges Product Summary Description/Features The CPX200 series of HEXFET power modules are

4ASS452

Abstract: DIODE 0A91
Contextual Info: International PD'9-1254 SlgRectifier_ IRL630S HEXFET Power MOSFET • • • • • • • S urface M ount A vailable in Tape & Reel D ynam ic dv/d t R ating R epetitive A valanche Rated Logic-Level G ate D rive r d s ON S pecified at VGS = 4V & 5V