IRLR120 Search Results

IRL520N

Abstract: AN-994 IRLR120N IRLU120N e 50k
Contextual Info: PD - 91541B IRLR/U120N HEXFET Power MOSFET l l l l l Surface Mount IRLR120N Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.185Ω G Description The D-PAK is designed for surface mounting using

Contextual Info: IRLR120N A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .2 2 a ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance 00 4^ ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 100V

irlr120n

Abstract: IS84
Contextual Info: $GYDQFHG 3RZHU 026 7 IRLR120N FEATURES BVDSS = 100 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.22Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8.4 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V

IRLU120N

Abstract: 9508 AN-994 IRFR120 IRFU120 IRL520N IRLR120N U120
Contextual Info: PD - 95082A IRLR/U120NPbF l l l l l l Surface Mount IRLR120N Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D RDS(on) = 0.185Ω G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier

AN-994

Abstract: IRL520N IRLR120N IRLU120N
Contextual Info: PD - 91541B IRLR/U120N HEXFET Power MOSFET l l l l l Surface Mount IRLR120N Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.185Ω G Description The D-PAK is designed for surface mounting using

Contextual Info: IRLR/U120N l l l l l D -P A K T O -2 5 2 A A Surface Mount IRLR120N Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated I-P A K T O -2 5 1 A A Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

part marking ab

Abstract: IRLR120 IRLU120 SiHLR120 SiHLR120-E3
Contextual Info: IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.27 Qg (Max.) (nC) 12 • Surface Mount (IRLR120/SiHLR120) Qgs (nC) 3.0

AN-994

Abstract: IRFR120 IRFU120 IRL520N IRLR120N IRLU120N U120
Contextual Info: PD - 95082A IRLR/U120NPbF l l l l l l Surface Mount IRLR120N Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D RDS(on) = 0.185Ω G Description ID = 10A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 95082A IRLR/U120NPbF l l l l l l Surface Mount IRLR120N Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.185Ω G Description The D-PAK is designed for surface mounting using

Contextual Info: IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR120, SiHLR120) • Straight Lead (IRLU120, SiHLU120)

AN-994

Abstract: IRLR120 IRLU120 1sd92
Contextual Info: International g ; Rectifier PD-9.636A IRLR120 IRLU120 HEXFET® Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRLR120 Straight Lead (IRLU120) Available in Tape & Reel Logic-Level Gate Drive V DSS= 1 0 0 V

Contextual Info: IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single D DPAK (TO-252)

irf 546

Contextual Info: PD- 95382 IRLR120PbF IRLU120PbF • Lead-Free www.irf.com 1 06/07/04 IRLR/U120PbF 2 www.irf.com IRLR/U120PbF www.irf.com 3 IRLR/U120PbF 4 www.irf.com IRLR/U120PbF www.irf.com 5 IRLR/U120PbF 6 www.irf.com IRLR/U120PbF www.irf.com 7 IRLR/U120PbF D-Pak TO-252AA Package Outline

EIA-541

Abstract: IRFR120 IRFU120 U120 91324
Contextual Info: PD- 95382A IRLR120PbF IRLU120PbF • Lead-Free Document Number: 91324 12/07/04 www.vishay.com 1 IRLR/U120PbF Document Number: 91324 www.vishay.com 2 IRLR/U120PbF Document Number: 91324 www.vishay.com 3 IRLR/U120PbF Document Number: 91324 www.vishay.com 4 IRLR/U120PbF

*LR120N

Contextual Info: IRLR120N Advanced Power MOSFET FEATURES - 100 V ^ D S o n = 0.22Q B ^D S S ♦ Rugged Gate Oxide Technology a II ♦ Lower Input Capacitance 00 4^ ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 100V

IRLR120N

Abstract: RG92
Contextual Info: IRLR120N A dvanced Power MOSFET FEATURES B V DSS — 1 0 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q 00 ^DS on = II ♦ Rugged Gate Oxide Technology 0 .2 2 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS= 1 0 0 V

Contextual Info: IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR120, SiHLR120) • Straight Lead (IRLU120, SiHLU120)

Contextual Info: IRLR120NPbF IRLU120NPbF l l l Surface Mount IRLR120N Straight Lead (IRLU120N) Advanced Process Technology l l Fast Switching l HEXFET Power MOSFET D Fully Avalanche Rated Lead-Free VDSS = 100V RDS(on) = 0.185Ω G Description Fifth Generation HEXFETs from International Rectifier utilize

Contextual Info: IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single D DPAK (TO-252)

EIA-541

Abstract: IRFR120 IRFU120 U120 DPak Package dimensions
Contextual Info: PD- 95382A IRLR120PbF IRLU120PbF • Lead-Free www.irf.com 1 12/07/04 IRLR/U120PbF 2 www.irf.com IRLR/U120PbF www.irf.com 3 IRLR/U120PbF 4 www.irf.com IRLR/U120PbF www.irf.com 5 IRLR/U120PbF 6 www.irf.com IRLR/U120PbF www.irf.com 7 IRLR/U120PbF D-Pak TO-252AA Package Outline

Contextual Info: P D - 9.1541A International I R Rectifier IRLR/U120N PRELIMINARY HEXFET Power MOSFET • • • • • Surface M ount IRLR120N Straight Lead (IRLU120N) A dvanced Process Technology Fast Switching Fully Avalanche Rated V d s s = "100V RüS(on) = 0.185Î2

Contextual Info: International S Rectifier 4Ö5SMS2 GQlS'ìTG D?S IRLR120 IRLU120 HEXFET Power M O S FE T • • • • • • • PD-9.636A IINR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRLR120 Straight Lead (IRLU120) Available in Tape & Reel Logic-Level Gate Drive

IRLR120

Abstract: IRLU120 SiHLR120 SiHLR120-E3 IRLR120 siliconix
Contextual Info: IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.27 Qg (Max.) (nC) 12 • Surface Mount (IRLR120/SiHLR120) Qgs (nC) 3.0

250M

Abstract: JS-50
Contextual Info: IRLR120/121 IRLU120/121 N-CHANNEL LOGIC LEVEL MOSFET FEATURES • • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area