JSS 97 DIODE Search Results

ci pc 123

Abstract: amar EP05Q06 DIODE SS-35 ISAO
Contextual Info: SCHOTTKY BARRIER DIODE EP05Q06 o . s a /6 0 v FEATURES OJEDEC SOD-123 Package o V ery Low profile 1.1mm M ax o High Surge Capability o Low T herm al Resistance OUL 94, VO o Packaged in 8mm tape Device M arking “ “ ^ Month of Mfg. A =Jan. B = Feb.—L=Dec.

Contextual Info: PD 9.1608C International IG R Rectifier IR L 3 1 0 3 D 1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged H EX FE T Power M O SFET Vdss= 30V and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application

"SOT-227 B" dimensions

Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFN 26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 p DS on *rr Symbol Test Conditions Maximum Ratings Voss vDGR Tj = 25°C to 150°C Tj = 25CC to 150°C; RGS= 1 M ti

1001RBVFR

Abstract: 1001RBV 1001rb
Contextual Info: A dvanced P o w er Te c h n o lo g y ' A P T 1001RBVFR 1000V 11A 1.000Í2 POWER MOS V FREDFET I Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT30M19JVFR

Contextual Info: APT30M19JVFR ADVANCED POW ER Te c h n o l o g y POWER MOSV 300V 130A 0.0190 FREDFET Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT30M85BNR

Abstract: LSE 405 APT3010BNR APT30M85 016Q
Contextual Info: A dvanced P o w er Te c h n o lo g y O D O S APT30M85BNR 300V APT3010BNR 300V POWER MOS IV® 40A 0.0850 35A 0.100Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M A XIM U M R ATING S Symbol All Ratings: T c = 25°C unless otherwise specified.

Contextual Info: Provisional Data Sheet No. PD - 9.1666 International IGR Rectifier IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Sum m ary 100Volt,0.18£l, HEXFET T h e lead less chip c a rrie r LC C p a cka g e re p re se n ts

ru E78996

Abstract: IRF E78996 E78996 rectifier module wiring IRK E78996 701819-303ac thyristors itt
Contextual Info: Bulletin 127131 rev. C 09/97 International I Q R Rectifier i r THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR k .4 1 , .5 6 Electrically isolated: DBC base plate • 3 500 V BMS isolating voltage ■ Standard J E D E C package Simplified mechanical designs, rapid assembly

MRF140

Abstract: ENE MICA CASE-211-11
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F M OSFET Line 150 W N-CHANNEL MOS LINEAR RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . d e s ig n e d p r im a r ily fo r lin e a r la rg e -s ig n a l o u tp u t s ta g e s in th e

Contextual Info: Provisional Data Sheet No. PD - 9.1299A International IG R Rectifier dv/dt HEXFET T R A N S IS T O R R E P E T IT IV E A V A L A N C H E A N D IR H M 9 25 0 IR H M 9 3 2 5 0 RATED P -C H A N N E L RAD HARD -200 Volt, 0.315£2, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

2N7380

Contextual Info: Preliminary Data Sheet No. PD - 9.1274C International TOR Rectifier IRHY7130CM IRHY8130CM JANSR2N7380 JANSH2N7380 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/614] N -C H A N N E L HEXFET TRANSISTOR MEGA RAD HARD 10OVolt, 0.18Q, MEGA RAD HARD HEXFET

Contextual Info: Provisional Data Sheet No. PD - 9.1564B International TOR Rectifier IRHM7064 IRHM8064 R E P E T IT IV E A V A LA N C H E A N D d v /d t R A TED HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 60 Vo It, 0.021 Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

L3103L

Abstract: 0T1S IRF4905L
Contextual Info: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated

Contextual Info: I , |. International n trt I " R Kectmer I R E P E T IT IV E A V A L A N C H E A N D Provisional Data Sheet No. PD - 9.887B dv/dt RATED HEXFET T R A N S IS T O R IR H M 7 05 4 i r h m s o 54 JAN SR 2N7394 JAN SH 2N7394 [REF: N-CHANNEL MEGA RAD HARD 60 Vo It, 0.03ft, MEGA RAD HARD HEXFET

c 4977 transistor

Abstract: transistor on 4977 mosfet 452 JSs 97 diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip

Contextual Info: Provisional Data Sheet No. PD - 9.1701 International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7Z60 IRHM8Z60 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 30 Vo It, 0.014Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’ s R A D H A R D te c h n o lo g y

Contextual Info: MOTOROLA Order this document by MTSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs

20N50ES

Abstract: MTW20N
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTW20N50E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TM OS POW ER FET 20 AMPERES 500 VOLTS RDS on} = 0-24 OHM IM-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information M TD F 1N 02H D Medium Power Surface Mount Products TM O S Dual N -C h an n e l F ield E ffe c t Tran sisto r M o to ro la P re fe rre d D e vice SINGLE TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS R D S on = 0.120 OHM

Contextual Info: MITSUBISHI IN TE G R A TE D CIRCUIT M65790FP F BTC IM A G E DATA DESCRIPTION M 65790FP F ix e d • is a p p l i e d c o m p re s s io n and le n g th C O M PR ES SIO N Easy M its u b is h i o r ig in a l im a g e d a ta d e c o m p re s s io n B lo c k T r u n c a t io n

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

sidewinder force feedback

Abstract: micro servo 9g how to control sidewinder force feedback 2 7406 ic IC LM319 IC 74LS04 LMS 7805 ic LM339 5BA DIODE IC 74LS02
Contextual Info: Maintenance Manual CORPORATION SIDEWINDER Va" Streaming Cartridge Tape Drive M A IN TEN A N C E M A N U A L PART NUMBER 20109—001B COPYRIGHT 1982 ARCHIVE CORPORATION MAINTENANCE MANUAL SIDEWINDER TABLE OF CONTENTS Paragraph Title CHAPTER 1.1 1.2 1.2.1 1.2.2

B4207D

Abstract: U880D u880 A4510D U1159D U 6548 D U7660 analoge schaltkreise Schieberegister U61256
Contextual Info: !n n I k ä r - J i s j e l e l - c f a n o n Neuheiten Weiterentwicklungen 1988 i l - f Inhalt 1. Analoge Schaltkreise A 1670 V A A B B B B C C C 4510 D 4511 D 460 G 3040 D A 4206 D 4207 D 574 C 670 C 670 C n Schaltkreis zur V e r t ik a la b le n k u n g in

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA