JILIN Search Results

ne555 national semiconductor

Abstract: NE555 PIN OUT 3CT12A The device is a drop-in replacement for the NCP2820EVB DIRECT Replacement with ON SEMICONDUCTOR NCP1450AV19EVB ne555 national Jilin Sino-Microelectronics
Contextual Info: Uploaded MPN Uploaded Supplier Crossed Part Number Crossed Manufacturer MCR12LMG ON Semiconductor 3CT12A Jilin Sino-Microelectronics NCV8502DADJG ON Semiconductor NCV8502D50G ON Semiconductor NCV8501DADJG ON Semiconductor LP2953IM LP2953IMX LP2953IM/NOPB LP2953IMX/NOPB

Jilin Sino-Microelectronics

Abstract: 3CT8A SCR PNPN Jilin
Contextual Info: Rever Blocking Triode Thyristors SCR R 3CT8A GENERAL DESCRIPTION ◆ Very low on-state voltage ◆ High ITSM ◆ High blocking voltage ◆ High reliability and stability PNPN devices designed for Motor control, Power converter, AC power controller, Light and temperature

D13001S

Abstract: 3DD13001S 3DD13001 transister Jilin Sino-Microelectronics d13001 Jilin
Contextual Info: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13001S Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply

TRANSISTOR D2101

Abstract: D2101 3DD2101 3DD2109 Transistors Bipolar NPN TO-3P
Contextual Info: Case-rated bipolar transistor for type 3DD2109 for low frequency amplification R 3DD2101 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=900V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.5 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV

D4124PL

Abstract: Jilin Sino-Microelectronics 110V AC to 5V DC ic 3DD41 3DD4124PL 3dd4124 D412
Contextual Info: Fast-Switching NPN Bipolar Transistor R D4124PL Characteristics ◆Middle Breakdown Voltage ◆High Current Capability ◆High Switching Speed ◆High Ruggedness Applications 110V AC ◆ Electronic Ballasts For Fluorescent Lighting ◆ Electronic Transformers

Jilin Sino-Microelectronics

Abstract: TO92Plastic 3CT1A TJ110
Contextual Info: Rever Blocking Triode Thyristors SCR R 3CT1A GENERAL DESCRIPTION ◆ Very low on-state voltage ◆ Highly sensitive triggering levels ◆ High ITSM ◆ High blocking voltage ◆ High reliability and stability PNPN devices designed for high volume, line-powered consumer

SCR PNPN

Abstract: TJ110 Jilin
Contextual Info: Rever Blocking Triode Thyristors SCR R 3CT2A GENERAL DESCRIPTION ◆ Very low on-state voltage ◆ High ITSM ◆ High blocking voltage ◆ High reliability and stability PNPN devices designed for Motor control, Power converter, AC power controller, Light and temperature

LTM15C166

Abstract: TV toshiba dramatic lq150F1 ltm14c ltm12c324 super amoled pmlcd lq133 LTM12C283 LQ150U1LH21
Contextual Info: FPD Producer Profile Report 5.1 Sharp • History Sharp’s origins can be traced back to the formation of Hayakawa Electric Industry in 1912. Hayakawa Electric was formed by inventor Tokuji Hayakawa, who invented the world’s first mechanical pencil, the Ever-Sharp. He introduced

AT89C1051-12PC

Contextual Info: AT89C1051 Features • • • • • • • • • • • • Compatible with MCS-51 Products 1 Kbytes of Reprogrammable Flash Memory Endurance: 1,000 Write/Erase Cycles Data Retention: 10 Years 2.7 V to 6 V Operating Range Fully Static Operation: 0 Hz to 24 MHz

Contextual Info: AT28C16 Features • Fast Read Access Time - 1 50ns • Fast Byte Write - 200ns or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Direct Microprocessor Control DATA POLLING • Low Power

M5206P

Abstract: m5206
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M5206P LINEAR CONTROL DUAL VCA 1C i DESCRIPTION The M5206P has 2 channels o f built-in linear controlled VCA Voltage controlled am plifier . These channels can be controlled independently. The ICs applications include radio cassette tape recorders, car audio systems, and Hi-Fi

Contextual Info: AT28C16 Features • • • • • • • • • • Fast Read Access Time -150 ns Fast Byte Write - 200 us or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Autom atic Clear Before Write Direct Microprocessor Control

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 4096 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Nonvolatile Memory

3CT12A

Abstract: SCR PNPN Jilin Sino-Microelectronics 20F50 3CT12 12v, 40a scr
Contextual Info: Rever Blocking Triode Thyristors SCR R 3CT12A GENERAL DESCRIPTION ◆ Very low on-state voltage ◆ High ITSM ◆ High blocking voltage ◆ High reliability and stability PNPN devices designed for Motor control, Power converter, AC power controller, Light and temperature

3CT16S

Abstract: Jilin Sino-Microelectronics
Contextual Info: Silicon Bidirectional Triode Thyristors triac R 3CT16S GENERAL DESCRIPTION ◆ ◆ ◆ ◆ ◆ ◆ Blocking Voltage to 600 Volts On-State Current Rating of 15 Amperes RMS at 80℃ Uniform Gate Trigger Currents in Three Modes High Immunity to dv/dt — 500 V/ s minimum at 125℃

AT28PC64

Abstract: AT28PC 920A7 AT-28PC64 10-NP at28 5962-87514 28PC64
Contextual Info: AT28PC64 Features • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches fo r 32 Bytes Internal Control Timer Fast Write Cycle Times Maximum Page Write Cycle Time: 2 ms 1 to 32 Byte Page Write Operation

Contextual Info: A TS42VA12 Features • • High-speed EPROM-based CMOS Multi-Function PLD Two Fully Programmable Arrays Eliminate "P-term Depletion” Up to 64 P-terms per OR Function Improved Output Macro Cell Structure Individually Programmable as: Registered Output with Feedback

Contextual Info: AT28C256 Features • • • • • • • • • • • Fast Read Access Time -1 5 0 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum

Contextual Info: AT28LV256 Features • • • • • • • • • • Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation

Contextual Info: ATF20V8B Features • 1 Industry Standard Architecture Emulates Many 24-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options • • Device ATF20V8B

2745b

Contextual Info: ¿¡m a W IR E L E S S « U3745BM i/C UHF ASK Receiver Description The U 3745B M is a m ulti-chip PLL receiver device sup­ plied in an S 0 2 0 package. It has been specially developed for the dem ands of RF low -cost data transm ission system s w ith low data rates from 1 kB aud to 10 kBaud in M an­

MN101EF57G

Abstract: MN101D10X MN103SfC2d MN103SH MN103SFE4K MN103SFE3K MN103SFa5K MN101EF31G MN101 PANASONIC 8-bit microcontrollers mn102
Contextual Info: 2009 ver.2 Microcomputer Family AM Series 8-bit AM1 Series 16-bit AM2 Series 32-bit AM3 Series Delivers Improved Performance and Cost Savings Unified Microcomputer Architecture Common architecture shared by 8-, 16-, and 32-bit models  The products of a rigorous analysis of embedded device software and system needs, the Panasonic AM1

Contextual Info: AT29C040A Features • • • • • • • • • • • • Fast Read Access Time -1 2 0 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 2048 Sectors (256 bytes/sector) Internal Address and Data Latches for 256-Bytes

Contextual Info: AT28BV64 Features • • • • • • • • 2.7V to 3.6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 nA CMOS Standby Current Read Access Time - 300 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling