20F50 Search Results
20F50 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 20F50 | Solid State | DIODE GEN PURP 500V 20A DO4 | Original | 110.7KB | 2 |
20F50 Price and Stock
Cal-Chip Electronics GMC04CG620F50NTCAP0402 COG 62PF 1% 50V |
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GMC04CG620F50NT | Cut Tape | 7,900 | 1 |
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Walsin Technology Corporation 0402N120F500CTCAP CER 12PF 50V C0G/NP0 0402 |
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0402N120F500CT | Digi-Reel | 7,221 | 1 |
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0402N120F500CT | 10,000 | 194 |
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0402N120F500CT | 12 Weeks | 10,000 |
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Cal-Chip Electronics GMC21CG620F50NTCAP0805 COG 62PF 1% 50V |
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GMC21CG620F50NT | Tape & Reel | 4,000 | 4,000 |
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Cal-Chip Electronics GMC31CG820F50NTCAP1206 COG 82PF 1% 50V |
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GMC31CG820F50NT | Digi-Reel | 3,996 | 1 |
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GMC31CG820F50NT | 3,091 |
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ResistorToday TPAL0220F500RK9RES 500 OHMS 35W 1% TO220 |
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TPAL0220F500RK9 | Tube | 417 | 1 |
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20F50 Datasheets Context Search
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Contextual Info: Page:58 PowerMOSFET OUTLI NE 20F50HP2 Uni t mm Package FTO220AG 3pi n ロット記号（例） Date code 500V20A 4.5 10.０ 品名略号 Type No. 15.０ 管理番号 （例） Control No. ３.45 0000 20F50H2 13.5 di / dt Feat ur e Hi ghVol t age LowRON Fas |
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20F50H2 | |
20F50H2
Abstract: 20F50
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20F50H2 20F50H2 20F50 | |
20F50H2
Abstract: 20F50 mip2
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20F50H2 20F50H2 20F50 mip2 | |
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Contextual Info: 5SDD 20F5000 5SDD 20F5000 Old part no. DV 818-2000-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 978 I FSM = 24 000 V TO = 0.940 rT = 0.284 low forward voltage drop low recovery charge high operating temperature low leakage current |
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20F5000 1768/138a, D/052/01c Aug-11 Aug-11 | |
20F5000Contextual Info: VRRM = 5000 V IFAVM = 1850 A IFRMS = 2900 A IFSM = 23500 A VF0 = 0.99 V rF = 0.282 mΩ Ω Rectifier Diode 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 01 • Very low on-state losses • Optimum power handling capability Blocking Part Number 5SDD 20F5000 5SDD 20F4800 |
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20F5000 5SYA1162-01 20F4800 20F4400 CH-5600 20F5000 | |
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Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) |
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20F5000 5SYA1162-01 CH-5600 | |
diode 3106Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter |
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20F5000 5SYA1162-01 CH-5600 diode 3106 | |
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Contextual Info: VRSM IFAVM IFRMS IFSM VF0 rF Rectifier Diode = 5200 V = 1978 A = 3106 A = 25.6x103 A = 0.94 V = 0.284 mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1 Parameter |
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20F5000 5SYA1162-01 CH-5600 |