1D7417 Search Results

AT27LV256R

Abstract: AT27LV256R-30 1N914 AT27C256R
Contextual Info: ATMEL CORP m 43E D 1D7417? 0 0 01 7 2 ^ D SB ATM AT27LV256R T-Y6-/3-2 9 T-H6 -G-25 Features • • • • • • • • • • • W ide P ow er S upply R ange, 3.0 V D C to 5.5 V D C C om patible w ith JE D E C S tandard A T27C 256R Low P ow er 3-V o lt C M O S O peration

Contextual Info: b3E ATP1EL CORP D • 1D74177 00020^3 bTT ■ ATM AT29C1024 Features • • • • • • • • • • • Fast Read Access Time - 70 ns Five-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 Words/Sector)

AT27HC1024

Abstract: AT27C1024 AT4014
Contextual Info: ATMEL CORP 43E D m 1D74177 000173=1 7 I ATM AT27HC1024 Features • Very Fast Read Access Time •55ns • Low Power CMOS Operation 8 mA max. Standby 80 mA max. Active at 10 MHz • Wide Selection of JED EC Standard Packages Including OTP 40-Lead 600 mil Cerdlp and OTP Plastic

Contextual Info: ATMEL CORP 43E D m 1D74177 000173=1 7 I ATM AT27HC1024 Features • Very Fast Read Access Time •55ns • Low Power CMOS Operation 8 mA max. Standby 80 mA max. Active at 10 MHz • Wide Selection of JED EC Standard Packages Including OTP 40-Lead 600 mil Cerdlp and OTP Plastic

Contextual Info: ATF22V1 OB/BL Features • Industry Standard Architecture Low-Cost, Easy-To-Use Software Tools High Speed Electrically Erasable Programmable Log ic Device 7.5 ns Max Propagation Delay Low Power ATF22V1OBL -1 0 mA Maximum Standby CMOS and TTL Compatible Inputs and Outputs

Contextual Info: AT28C64B Features • • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation

Contextual Info: AT24C01A/02/04/08/16 Features • Low Voltage and Standard Voltage Operation 5.0 Vcc = 4.5V to 5.5V 2.7 (Vcc = 2.7V to 5.5V) 2.5 (Vcc = 2.5V to 5.5V) 1.8 (Vcc = 1.8V to 5.5V) Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K), 1024 X 8 (8K) or 2048 X 8 (16K)

ERO+1838

Contextual Info: AT76C10E Features • • • • • • • • • • • • High Accuracy Programmable Gain Amplifiers ± 0.02 dB Accuracy Typical 31.5 dB Range In 0.5 dB Steps Software Programmable Group Delay Equalizer For Leased and Dial-Up Lines High Dynamic Range - over 90 dB

Contextual Info: AT27LV010 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C010 Low Power 3-Volt CMOS Operation 100 |iA max. Standby 26 mW max. Active at 1 MHz for Vcc = 3.3 VDC 138 mW max. Active at 5 MHz for Vcc = 5.5 VDC

Contextual Info: AT38LV256 Features • • • • • • • Low Power 25 mA Maximum Active 30 (iA Maximum (Standby) 3.3 V ± 10% Supply Fully Static: No Clock Required Two Control Inputs (CE and OE) TTL Compatible Inputs and Outputs 28-Pin SOIC Surface Mount Packages

AT29C512-90

Contextual Info: AT29C512 Features • • • • • • • • • • • • Fast Read A ccess Tim e - 70 ns 5-V olt-O nly R eprogram m ing Sector P rogram O peration Single C ycle R eprogram E rase and Program 512 Sectors (128 bytes/sector) Internal A ddress and Data Latches tor 128-B ytes

Contextual Info: AT28LV64 Features • • • • • • • • • 2.7 V to 3.6 V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 |jA CMOS Standby Current Read Access Time - 200 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling

Contextual Info: AT29LV512 Features • • • • • • • • • • • • Single 3.3 V ± 10% Supply Three-Volt-Only Read and Write Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 uA CMOS Standby Current Fast Read Access Time - 200 ns

Contextual Info: AT27LV256R Features • • • • • • • • • • • Wide Power Supply Range, 3.0 V to 5.5 V Fast Read Access Time -120 ns Compatible with JEDEC Standard AT27C256R Low Power 3.3-Volt CMOS Operation 20 |iA max. Standby 29 mW max. Active at 5 MHz for Vcc = 3.6 V

Contextual Info: AT89LV52 Features • • • • • • • • • • • Compatible with MCS-51 Products 8 Kbytes of In-System Reprogrammable Flash Memory Endurance: 1,000 Write/Erase Cycles Fully Static Operation: 0 Hz to 12 MHz Three-Level Program Memory Lock 256 x 8-Bit Internal RAM

Contextual Info: AT49F040 Features • • • • • • • • • • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 90 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time -10 seconds Byte By Byte Programming - 50 ns/Byte

AT27LV512

Contextual Info: AT27LV512R Features • • • • • • • • • • • Wide Power Supply Range, 3.0 V to 5.5 V Fast Read Access T im e-120 ns Compatible with JEDEC Standard AT27C51.2R Low Power 3.3-Volt CMOS Operation 20 jiA max. Standby 29 mW max. Active at 5 MHz for Vcc = 3.6 V

Contextual Info: AT29C1024 Features • Fast Read A ccess Time - 70 ns • Five-Volt-Only Reprogramming • Sector Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 words/sector) Internal Address and Data Latches for 128 Words • Internal Program Control and Timer

Contextual Info: AT18V8Z Features • 20-pin Universal EPLD • Virtually Zero Standby Power • Functional Replacement for Common 20-Pin Programmable Devices Io l = 24 mA • High Performance CMOS EPROM Cell Technology Erasable Reconfigurable 100% Testable • 25 ns and 35 ns Max Propagation Delay Commercial

Contextual Info: AT27BV040 Features • • • • • • • • • • • Fast Read Access Time -100 ns Unregulated Battery Power Supply Range, 2.7 V to 3.6 V Compatible with JEDEC Standard AT27C040 Low Power CMOS Operation 20 |iA max. Standby 29 mW max. Active at 5 MHz for Vcc = 3.6 V

Contextual Info: • 10 74 1 7 7 G 0 D 3S 35 433 ATMEL IATM CORP bME AT22LV10/L D Features • Low Voltage Programmable Logic Device Wide Power Supply Range - 3.0 V to 5.5 V Ideal fo r Battery Powered Systems • High Speed Operation 20 ns max Propagation Delay at Vcc = 3.0 V

Contextual Info: AT27C516 Features Fast Read Access Time - 45 ns Low Power CMOS Operation 100 nA max. Standby 30 mA max. Active at 5 MHz JEDEC Standard Packages 44-Lead PLCC 40-Lead TSOP 10mm x 14mm 5V ±10% Power Supply High Reliability CMOS Technology 2000V ESD Protection

AG1033

Contextual Info: AT29C257 Features • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram Erase and Program Internal Address and Data Latches for 64-Bytes Internal Program Control and Timer

Contextual Info: AT93C46/56/57/66 Features • • • • • • • • Low V oltage and Standard Voltage O peration 5.0 V cc = 4.5V to 5.5V 2.7 (Vcc = 2.7V to 5.5V) 2.5 (Vcc = 2.5V to 5.5V) 1.8 (Vcc = 1.8V to 5.5V) User Selectable Internal O rganization 1K: 1 2 8 x 8 or 6 4 x 1 6