AT28 Search Results

Contextual Info: AT28C64B Features • • • • • • • • • • • Fast Read Access Time -150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation

Contextual Info: CRTRLYST S E M I C O N D U C T O R 2231 CALLE DE LUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 Fax: (408) 980-8209 AT28F010/28F010I 1 Megabit (128K x 8) CMOS FLASH MEMORY DESCRIPTION FEATURES The C AT28F010/28F0101 is a high speed 128K x 8-bit electrically erasable and reprogrammable

Contextual Info: AT28LV64 Features • • • • • • • • • 2.7 V to 3.6 V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 |jA CMOS Standby Current Read Access Time - 200 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling

Contextual Info: AT28LV256 Features • • • • • • • • • • Fast Read Access Time - 200 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms maximum 1 to 64 Byte Page Write Operation

AT28C256

Contextual Info: AT28C256 Features • • • • • • • • • • • Fast Read Access T im e -1 5 0 ns Automatic Page W rite Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast W rite Cycle Times Page W rite Cycle Time: 3.0 ms o r 10 ms maximum

Contextual Info: AT28LV64 Features • • • • • • • • • 2.7 V to 3.6 V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 iA CMOS Standby Current Read Access Time - 200 ns Byte W rite - 3 ms Direct Microprocessor Control DATA Polling

Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -1 2 0 ns Fast Byte Write - 200 |is or 1 ms Self-Timed Byte W rite Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

Contextual Info: AT28C64/X Features • Fast Read Access Time -120 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Di rect Microprocessor Control READY/BUSY Open Drain Output

Contextual Info: AT28HC64B Features • • • • • • • • • • • Fast Read Access Time - 55 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1 to 64-Byte Page Write Operation

Contextual Info: AT28HC256/L Features • • • • • • • • • • • Fast Read Access Time - 70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms or 3 ms maximum

28C010

Abstract: AT28C010 AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25 15DM883 lm883
Contextual Info: AT28C010 Mil Features • • • • • • • • • • Fast Read Access Time - 120 ns Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation

at28c040

Abstract: AT28C040-15BM AT28C040-15BC AT28C040-15BI AT28C040-15FC AT28C040-15LC AT28C040-20 AT28C040-25 0542A
Contextual Info: AT28C040 Features • • • • • • • • • • • Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 256-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 256-Byte Page Write Operation

28HC291L

Abstract: AT28HC291-45DI 28HC291
Contextual Info: AT28HC291/L Features • • • • • • • • • • Fast Access Time - 35 ns Low Power Dissipation 100 nA Standby Current AT28HC291L 80 mA Active Current E2PROM Technology -10 0 % Reprogrammable Direct Replacement for Bipolar PROMs Reprog rammable 1000 times

Contextual Info: AT28HC191/L Features • • • • • • • • • • Fast Access Time - 35 ns Low Power Dissipation 100 |xA Standby Current AT28HC191L 80 mA Active Current E2PROM Technology -100% Reprogrammable Direct Replacement for Bipolar PROMs Reprogrammable 1000 times

AT28HC64B-120

Abstract: AT28HC64B-70 AT28HC64B-70JI AT28HC64B-70PI AT28HC64B-70SI AT28HC64B-90 AT28HC64B AT28HC64BF
Contextual Info: Features • Fast Read Access Time – 70 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times • • • • • • • • • – Page Write Cycle Time: 10 ms Maximum Standard 2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)

atmel 28c16

Abstract: aT28C16
Contextual Info: AT28C16 Features • Fast Read Access Time -150 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Direct Microprocessor Control DATA POLLING • Low Power

Contextual Info: AT28C17 Features • Fast Read Access Time - 150ns • Fast Byte Write - 200ns or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Direct Microprocessor Control DATA POLLING READY/BUSY Open Drain Output

Contextual Info: AT28HC64/L Features • • • • • » • • • • Fast Read Access Time - 55 ns Automatic Page Write Operation Internal Address and Data Latches for 32 Bytes Internal Control Timer Fast Write Cycle Times Maximum Page Write Cycle Time: 2 ms 1 to 32 Byte Page Write Operation

Carrier 28U

Contextual Info: AT28HC256/L Features • • • • • • • • • • • Fast Read Access Time •70 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms or 3 ms maximum

CAT28C16A

Abstract: 28C16A CAT28C16ANI-20T MS-013
Contextual Info: C AT28C 16A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: -A c tiv e : 25 mA Max. -S ta n d b y: 100 fiA Max. ■ Hardware Write Protection ■ CMOS and TTL Compatible I/O

at28

Abstract: AT28HC16LN-55PI AT28HC16-45 AT28HC16-55 AT28HC16-70 AT28HC16L-55 24P6
Contextual Info: AT28HC16/L Features • • • • • • • • • • Fast Read Access Time • 45ns Fast Byte Write - 1ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

28C16

Abstract: AT28C16 AT28C16-15 AT28C16-20 AT28C16-25
Contextual Info: ATMEL CORP 43E I> . r • B i 1074177 i r i 1 i 0GIBS22 Q ■ATM AT28C16 Features • • • • • • • • • • Fast Read Access Tim e-150ns Fast Byte Write - 200|iS o r 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer

AT28C256

Abstract: 28C256 A12C A14C AT28C256-15 AT28C256-20 AT28C256-25 5962-88525 AT28C256EF
Contextual Info: ATMEL 43E CORP m D 1074177 GOOIS^Q b SATM AT28C256 T -V 6 -/3 -2 7 Features • • • • • • • • • • • Fast Read Access Tim e-150ns Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast Write Cycle Times

28C1024

Abstract: 28C1024 atmel AT28C1024-12 AT28C1024-W AT28C1024-15 AT28C1024 AT28C1024-20 AT28C1024-20BC D005121 ATMEL 28C1024
Contextual Info: AT28C1024 Features • • • • • • • • • • • Fast Read Access T im e -120 ns Automatic Page Write Operation Internal Address and Data Latches for 64 Words Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 10 ms maximum