28C16 Search Results

28C16A

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM 30 NC 32 Vcc 31 WE 2 NC 1 NU 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3 14 24 23 22 21 20 19

Contextual Info: M 28C16B M 28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at Vcc=5V ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28CxxB - 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

Contextual Info: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte

F91300 MASSY

Contextual Info: MICROCHIP TECHNOLOGY INC blE D • blD32Dl 000b514 HTT ■fICHP T - 4 & - U - Z 7 28C16A & M icroch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation

Contextual Info: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100nA Standby • Fast Byte Write Time— 200|is or 1ms • Data Retention >10 years

tce 1994

Abstract: L0523 28C16A
Contextual Info: M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years • High Endurance-Minimum 104 Erase/Write Cycles

Contextual Info: M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time—200 ]xs or 1 ms • Data Retention >200 years

Contextual Info: 28C16A & M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100nA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES PACKAGETYPES h. o o => 8 |!±j o • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years

200B

Abstract: 28C16A DK-2750 RG41
Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC

Contextual Info: $ M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES 24 D V ce A5C 3 M C 4 22 H A 9 A3C S 20 23 D A B 21 D W E A2C 6 o 18 3 A 1 0 A1C 7 AO C 8 5 16 : c e 17 D l/0 7 vooC 9 v o i z 10 16 3 1 /0 6 15 D i/ o s I/0 2 C 11 14 H U 0 4 VssC 12 13 ] 1/03 A6

c17f

Contextual Info: 3890002 QENL 83 D 0 3 3 9 6 ÏNSTR/ M I C R O C H I P MI CROCHIP TECHNOLOGY INC GENERAL INSTRUMENT A3 D 28C16/28C17 blGBSDl 0 0 0 3 3 ^ ÜTf 7 PBELDH01N1ÂRV DIM FO M ATDO IN] 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns

Contextual Info: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 1OOjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • C M OS Technology for Low Power Dissipation - 30 m A Active - 100 |iA Standby • Fast Byte W rite Time— 200 [is or 1 ms • D ata R etention >200 years • High E ndurance-M inim um 104 Erase/Write Cycles

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time—200 |xs or 1 ms • Data Retention >10 years

28C16A

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles

INTEL 2817

Abstract: xicor 2816 2BC-1715 GENERAL INSTRUMENT intel 2816 Intel 28C17 intel 28c16 28C16 2BC17-15 2BC17-10
Contextual Info: R e v is io n s o OATl CN otscMimoN •MT •V Cm AM Jun* 24, 19B5 f PRELIMINARY CUSTOMER PROCUREMENT SPECIFICATION 28C16/26C17/2BC291 16K ELECTRICALLY ERASABLE PROM APR 2 0 1993 006085 •HI IT / I 1-14 > m m i 1 [ 1 • H ir r L A tT M tV S i Wibu iio n u rr

28C16A DATASHEET

Contextual Info: 28C16A 16K 2K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are latched

Contextual Info: $ 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 jiA Standby • Fast Byte Write Time— 200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles

Contextual Info: Obsolete Device 28C16A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2

c17f

Abstract: AAG EEPROM 28C16 28c17
Contextual Info: GENERAL INSTRUMENT 28C16/28C17 PIRELIMIÛINIÂIRV OTNFORUÂTDOIN 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS Technology fo r Low Power Dissipation — 100/uA Standby — 30 mA Active

L0615

Contextual Info: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast R ead Access Tim e— 1 50 ns • C M O S Technology for Low Pow er Dissipation - 3 0 m A Active - 100 ^ A Standby A7 C• 1 23 H a s A s ti 3 22 3 A 9 A4C 4 21 3 W É A3 C 5