JE71 Search Results

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: C 16.90 F E D REVISIONS [.665 ] REV PIN NUMBERS SHOW FOR REFERENCE ONLY, IT DOES NOT SHOW ON ACTUAL PART 8.98 13.75 [.354 ] [.541 ] [.815 ] TOP VIEW 16.20 Mjrmr F re q u e n c y MHz SECTION A - A SIDE VIEW SHOWING WITH PLUG 8 .5 5 8 .3 5 [ . 4 5 3 ] MIN L 7

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

JE370

Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
Contextual Info: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176

MJE240

Abstract: MJE721 MJE720 MJE241 MJE700 MJE701 MJE702 MJE703 MJE800 MJE801
Contextual Info: Power Transistors TO-126 Case Continued Bottom View Top View TYPE NO. NPN M JE180 PNP 1 M JE170 ic PD BVCBO BVCEO (A) (W) (V) 00 MAX 3.0 15 @ lc h i :E (mA) V C E ( S A T) @ I C (V) (A) fT (MHz) MIN MAX MIN MIN MIN MAX 60 40 50 250 100 0.3 0.5 50 50 250

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

transistor BD 141

Abstract: transistor BD 378 TRANSISTOR BD 168 MJE712 MJE711 bd 125 equivalent MJE710 MJE720 bd transistor series plji
Contextual Info: JE710 SILICON JE711 JE712 PNP SILICON MEDIUM-POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS PNP SILICON . . . designed fo r use in low power amplifiers, as drivers in high-power amplifier and medium-speed switching circuits. • DC Current Gain hpE = 40 (Min) @ I q “ 150 mAdc

1DI300ZN-1

Abstract: JE711 JE71 B348 zener ci 5t
Contextual Info: 1DI300ZN-120 300A ✓ < 7 - : Outline Drawings 7 h POWER TRANSISTOR MODULE : Features • hpE^'fiH-' High DC Current Gain • f * - K rt* • a e ^ O T ia ^ t - t : Applications • i/ L ffl'f V’-'i— 9 General Purpose Inverter • Uninterruptible Power Supply

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.