JE TRANSISTOR Search Results

2955T

Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes

JE243

Abstract: JE253 je 243 Transistor 834
Contextual Info: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •

13003 TRANSISTOR equivalent

Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
Contextual Info: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS

MJH16004

Contextual Info: MOTOROLA Order this document by MJE16002/D SEMICONDUCTOR TECHNICAL DATA M JE 16002* M JE 16004* D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors ‘ Motorola Preferred Device These transistors are designed for high-voltage, high-speed switching of inductive

transistor m 1104

Abstract: je210 MJE200
Contextual Info: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors NPN M JE 200* PNP M JE 210* . . . designed for low voltage, low-power, high—gain audio amplifier applications. • • • • • C ollector-Em itter Sustaining Voltage —

JF18006

Contextual Info: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use

Matsushita Miniature Relay s3 12v

Abstract: circuit diagram of laser based door opener Matsua relay 12V pc 144V DC Motor Speed Controller transistor SMD DF HAND DRYER CIRCUIT DIAGRAM SPARK quench LR26550 je1axn-dc24v-h automatic voltage stabilizer winding data
Contextual Info: JE-X JE-X RELAYS COMPACT ECONOMICAL POWER RELAYS 22 .866 UL File No.: E43028 CSA File No.: LR26550 14 .551 18.7 .736 • Compact size - Height Max. 18.7 mm .736 inch lower than JY relay 22.5 mm (.886 inch) • High contact capacity — 5A 125 V AC • Safety-oriented between coil and contact terminals

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 16002* M JE 16004* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors ‘ Motorola Preferred D*vte* T h e se tra n sisto rs a re d e s ig n e d fo r h ig h -v o lta g e , h ig h -s p e e d s w itc h in g o f in d u c tiv e

Contextual Info: SM-8 DUAL NPN MEDIUM POWER ZDT651 TRANSISTORS SS[JE - 1- NCIVEMEER I!WM . . . . .- j:~~: ~ PARTIMARKING DETAIL - T651 ABSOLUTE MAXIMUM I Collectc,r —— Ern;tter Base . Voltage -. \ oltage IOperatir}g Cc;Ilector and Storage Current Temperature

MJE130

Abstract: MJE13070 MJE13071
Contextual Info: HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS MJE13070 MJE13071 400-450 VOLTS 5 AMP, 80 WATTS The M JE 13070and MJE13071 are high-voltage, high-speed power switching transistors, designed for use with inductive circuits, including: switching regulators, inverters, solenoid

F18002

Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS

Contextual Info: Philips Semiconductors bb53T31 0031765 TS6 • ^PX NPN HDTV video transistor BFQ291 - N AMER PHILIPS/DISCRETE FEATURES fc.'JE D PINNING • High breakdown voltages • Low output capacitance PIN DESCRIPTION 1 collector • High gain bandwidth product 2 base

Contextual Info: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR

10205 transistor

Abstract: JF18004
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS

Contextual Info: DTC123 JE/JUA/JCA/JSA NPN Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.

2322151

Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
Contextual Info: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

TRANSISTOR SOT-23 marking JE

Abstract: transistor marking code e42 DTC123 sot-23 npn marking code 162 dtc123 equivalent transistor marking e42 code JE SOT23 Transistor A12 011 B NPN SOT23 Diode SOT-23 marking JE
Contextual Info: DTC123 JE/JUA/JCA/JSA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

BU208A

Abstract: GC630 IS0WATT218
Contextual Info: BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N . JE D E C T O -3 METAL CASE. APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR

TRANSISTOR 13007a

Abstract: 13007a 13007a power transistor 13007* transistor S4001
Contextual Info: SGS-THOMSON S i i*i I[L[l g !QOS M JE 13007A SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR • HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007A is silicon multiepitaxial mesa

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK453-100B

Abstract: 100-P BUK453-100A T0220AB DIODE BJE
Contextual Info: b=JE T> N AMER PHILIPS/DISCRETE • bbS3T31 DOBQbDS AT? M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended for use in

Contextual Info: DTA123 JM/JE/JUA/JCA/JSA PNP Small Signal Transistor Small Signal Diode Features ­Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . ­The bias resistors consist of thin -film resistors with

Contextual Info: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS