JE TRANSISTOR Search Results

JF18006

Contextual Info: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use

Matsushita Miniature Relay s3 12v

Abstract: circuit diagram of laser based door opener Matsua relay 12V pc 144V DC Motor Speed Controller transistor SMD DF HAND DRYER CIRCUIT DIAGRAM SPARK quench LR26550 je1axn-dc24v-h automatic voltage stabilizer winding data
Contextual Info: JE-X JE-X RELAYS COMPACT ECONOMICAL POWER RELAYS 22 .866 UL File No.: E43028 CSA File No.: LR26550 14 .551 18.7 .736 • Compact size - Height Max. 18.7 mm .736 inch lower than JY relay 22.5 mm (.886 inch) • High contact capacity — 5A 125 V AC • Safety-oriented between coil and contact terminals

MJE130

Abstract: MJE13070 MJE13071
Contextual Info: HIGH VOLTAGE/HIGH SPEED NPN POWER TRANSISTORS MJE13070 MJE13071 400-450 VOLTS 5 AMP, 80 WATTS The M JE 13070and MJE13071 are high-voltage, high-speed power switching transistors, designed for use with inductive circuits, including: switching regulators, inverters, solenoid

F18002

Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS

Contextual Info: Philips Semiconductors bb53T31 0031765 TS6 • ^PX NPN HDTV video transistor BFQ291 - N AMER PHILIPS/DISCRETE FEATURES fc.'JE D PINNING • High breakdown voltages • Low output capacitance PIN DESCRIPTION 1 collector • High gain bandwidth product 2 base

Contextual Info: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.

TRANSISTOR SOT-23 marking JE

Abstract: transistor marking code e42 DTC123 sot-23 npn marking code 162 dtc123 equivalent transistor marking e42 code JE SOT23 Transistor A12 011 B NPN SOT23 Diode SOT-23 marking JE
Contextual Info: DTC123 JE/JUA/JCA/JSA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

Contextual Info: N AMER PHILIPS/DISCRETE b=JE D bbS3*1Bl QQBDbDS fiT? « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS

sot23 code JM

Abstract: TRANSISTOR SOT-23 marking JE JE SOT23 SOT23 JM DTA123 SOT23 JE
Contextual Info: DTA123 JM/JE/JUA/JCA/JSA PNP Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

Contextual Info: i i N ANER PHILIPS/DISCRETE b=JE » bb53T31 0DSfllb5 D67 2N5088 APX SILICON PLANAR EPITAXIAL TRANSISTOR NPN small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary type is 2N5086. QUICK REFERENCE DATA

Contextual Info: MOTOROLA Order this document by MJE16204/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 16204 SCANSWITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors POWER TRANSISTORS 6.0 AMPERES 550 VOLTS — VC ES

BCY59

Abstract: BCY58 bcy59c bcy58v BCY 85 bcy59v
Contextual Info: BCY58, BCY59 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications electronic design in commercial The transistors are subdivided into four groups A, B, C and D according to their current gain. max. 5.0$ max.0.50 Metal case JE D E C TO -18

DTC123

Contextual Info: Transistors Digital transistors built-in resistors DTC 123 JE / DTC 123 JUA / DTC 123 JKA DTC 123 JSA •F eatu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (se e th e equivalent c ir­

2N1227

Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
Contextual Info: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation

MMBT2369

Abstract: MMBT2369A MMPQ2369 MMPQ3725
Contextual Info: This Surface Mount Transistors Material n~ In a fc-" fc-1 UJ O til Discrete POWER & Signal Technologies National Semiconductor' Surface Mount Transistors Copyrighted □ a a -C NPN Saturated Switches JE -0 ui By o J3 fc-1 Device No. SOT-23 Mark V Case Style

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

IS621K30

Abstract: IS626040 ID2260A IEF260A2 powerex igbt ID126030 IS626030 ID121215
Contextual Info: POülEREX INC miN EREX 3=JE D • 7 2 ^ 5 1 GG04b34 S « P R X _ • IGBTMOD Selector Guide The Powerex IGBT modules are our newest product line. Powerex IGBTs are available in

biosensor

Abstract: abstract on biomedical instruments photo glucose tod meter circuit diagram biosensor ,impedance 0b111 circuit diagram glucose meter
Contextual Info: Freescale Semiconductor Quick Reference User Guide Abstract Document Number: ANPERIPHQRUG Rev. 0, 07/2010 Quick Reference User Guide for Analog Peripherals on the MM and JE Family by: Alejandra Guzman, Wang Hao, Han Lin, Carlos Neri, Medina Rimoldi Cuauhtemoc

BSX45

Abstract: BSX46 BSX66
Contextual Info: BSX45 BSX 46 SILICON PLANAR NPN MEDIUM POWER AM PLIFIER S The BSX 45 and BSX 46 are silicon planar epitaxial NPN transistors in Je d ecT O -39 metal case, intended fo r use in m edium power general industrial applications. ABSOLUTE M A X IM U M RATINGS Vces

702 y TRANSISTOR

Abstract: JE701 JE700 702 P TRANSISTOR je 701
Contextual Info: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA bv mje978o/d M JE 9780* Advance Information PNP Silicon Power Transistor ‘ Motorola Preferred Device The MJE9780 is designed for vertical output of 14-inch to 17-inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.

transistor 3053

Abstract: 3053 TRANSISTOR 2n3053 transistor 2n3053
Contextual Info: 2N 3053 SILICON PLANAR NPN AMPLIFIER AND SWITCH The 2N 3053 is a silicon planar epitaxial NPN transistor in Je d ecT O -39 metal case, intend­ ed fo r m edium -current switching and am p lifie r applications. ABSOLUTE MAXIMUM RATINGS VcBO V cE O V ebo lc