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    J300A Search Results

    J300A Datasheets (36)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    J300A
    General Electric Semiconductor Data Book 1971 Scan PDF 166.64KB 1
    J300A
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 43.52KB 1
    J300A
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 73.25KB 1
    J300A
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 109.18KB 1
    J300A
    Unknown PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS Scan PDF 213.73KB 4
    badge SMA5J300A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMA/DO-214AC package with 500W peak pulse power, 5.0 to 440V working voltage range, fast response, and unidirectional or bidirectional polarity options.Surface mount transient voltage suppressor diode in SMA/DO-214AC package, 500W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diode in SMA/DO-214AC package, 500W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diode in SMA/DO-214AC package, 500W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diode in SMA/DO-214AC package with 500W peak pulse power, 5.0 to 440V breakdown voltage range, fast response, and unidirectional or bidirectional polarity options.Surface mount transient voltage suppressor diode in SMA/DO-214AC package with 500W peak pulse power, 5.0 to 440V breakdown voltage range, and fast response for circuit protection.Surface mount transient voltage suppressor diode in SMA/DO-214AC package with 500W peak pulse power, 5.0 to 440V working voltage range, fast response, and unidirectional or bidirectional options available.Surface mount transient voltage suppressor diode in SMA/DO-214AC package, 500W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated, fast response, low leakage current.Surface mount transient voltage suppressor diode in SMA/DO-214AC package, 500W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating temperature -55 to +150°C. Original PDF
    badge SMAJ300A-AU
    Jiangsu JieJie Microelectronics Co Ltd 400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with peak pulse power capability of 400W at 10/1000us waveform and low leakage current. Original PDF
    badge SMAJ300A
    AK Semiconductor Surface mount transient voltage suppressor in SMA (DO-214AC) package, 400W peak pulse power, 5.0V to 440V reverse stand-off voltage, low profile and glass passivated junction for reliable surge protection. Original PDF
    badge SMAJ300A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diodes in SMA/DO-214AC package with 400W peak pulse power, voltage range 5.0 to 440V, unidirectional and bidirectional versions, glass passivated die, fast response, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diodes in SMA/DO-214AC package with 400W peak pulse power, voltage range 5.0V to 440V, unidirectional and bidirectional versions, glass passivated die, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diodes in SMA/DO-214AC package, 400W peak pulse power, 5.0V to 440V working voltage range, unidirectional and bidirectional versions available, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diodes in SMA/DO-214AC package, 400W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, low leakage current.Surface mount transient voltage suppressor diodes in SMA/DO-214AC package, 400W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions available, with fast response and excellent clamping capability. Original PDF
    badge SMBJ300A
    Shenzhen Heketai Electronics Co Ltd Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C. Original PDF
    badge SMCJ300A
    Leiditech SMCJ Series 1500W Transient Voltage Suppressor diodes offer low profile surface mount packaging, 1500W peak pulse power handling at 10x1000 us waveform, fast response time under 1ps, and excellent clamping capability for circuit protection in various industrial applications. Original PDF
    badge SMCJ300A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMC/DO-214AB package with 1500W peak pulse power, 5.0V to 440V breakdown range, and fast response for uni-directional and bi-directional protection.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 1500W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating junction temperature from -55 to +150C.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 1500W peak pulse power, 5.0V to 440V breakdown voltage range, available in uni- and bi-directional versions with glass passivated die.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 1500W peak pulse power, 5.0V to 440V breakdown voltage range, uni- and bi-directional versions available, glass passivated die construction.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 1500W peak pulse power, 5.0 to 440V breakdown voltage range, uni- and bi-directional versions available, operating junction temperature from -55 to +150C.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 5.0 to 440 V standoff voltage, 1500W peak pulse power, unidirectional and bidirectional versions available, glass passivated die, operating temperature -55 to +150°C.SMCJ5.0A(CA) to SMCJ440A(CA) series surface mount transient voltage suppressor diodes in SMC/DO-214AB package, with peak pulse power of 1500W, operating voltage range 5.0V to 440V, unidirectional and bidirectional versions available, glass passivated for reliability. Original PDF
    badge 15BJ300A
    Jiangsu JieJie Microelectronics Co Ltd 1500W Transient Voltage Suppressor diode in SMBF package, designed for surface mount applications, featuring low inductance, fast response time, and high peak pulse power capability at 10/1000us waveform.1500W Transient Voltage Suppressor diode in SMBF package, featuring low profile, low inductance, 10/1000μs pulse waveform rating, high clamping capability, and surface mount design for circuit protection applications.1500W Transient Voltage Suppressor diode in SMBF package with 10/1000μs pulse waveform capability, low leakage current, fast response time, and standoff voltages ranging from 5V to 440V for surface mount applications.1500W Transient Voltage Suppressor diode with low profile surface mount package, 10/1000μs pulse waveform rating, high peak pulse power capability, and low leakage current for ESD protection in various electronic applications.1500W Transient Voltage Suppressor diode in SMBF package, featuring 10/1000μs pulse waveform rating, low leakage current, fast response time, and high surge current capability for surface mount applications.1500W Transient Voltage Suppressor diode in low profile SMBF package, featuring 10/1000μs pulse waveform capability, low inductance, fast response time, and high clamping performance for surface mount applications.1500W Transient Voltage Suppressor diode in low profile surface mount package with 10/1000μs pulse waveform rating, low inductance, fast response time, and high clamping capability for circuit protection applications.1500W Transient Voltage Suppressor diode in low profile surface mount package, featuring 10/1000μs pulse waveform rating, low inductance, fast response time, and high surge capability for circuit protection applications.1500W Transient Voltage Suppressor diode in SMBF package, featuring low profile and low inductance design, with 10/1000μs pulse waveform capability, ideal for surface mount applications requiring high surge protection. Original PDF
    badge SMBJ300A
    Leiditech 600W peak pulse power Transient Voltage Suppressor (TVS) diode in SMB package, designed for surface mount applications with low inductance, fast response time less than 1.0ps, and glass passivated junction for reliable transient protection.600W peak pulse power SMBJ Series transient voltage suppressor with low profile surface mount package, fast response time, excellent clamping capability, and 10/1000 μs waveform rating for use in consumer, automotive, and industrial applications. Original PDF
    badge 1KSMBJ300A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMB/DO-214AA package with 600W peak pulse power, 6.8V to 440V breakdown range, glass passivated die, and unidirectional or bidirectional polarity options. Original PDF
    badge SMBJ300A-AU
    Jiangsu JieJie Microelectronics Co Ltd 600W transient voltage suppressor diode in SMB package with 10/1000μs pulse waveform capability, low leakage current, fast response time, and standoff voltages ranging from 10V to 440V for unidirectional and bidirectional configurations.600W transient voltage suppressor diode in SMB package, designed for surface mount applications, with peak pulse power of 600W at 10/1000us waveform, low clamping voltage, and operating temperature from -55 to +150°C.600W transient voltage suppressor diode in SMB package with 10/1000μs pulse waveform rating, low leakage current, fast response time, and standoff voltages from 10V to 440V for unidirectional and bidirectional configurations.600W transient voltage suppressor diode in SMB package with 10/1000μs pulse waveform rating, low leakage current, fast response time, and standoff voltages from 10V to 440V for surface mount applications.600W SMBJxx(C)A-AU Series TVS diodes in SMB package offer low profile, low inductance, and high clamping capability with 600W peak pulse power at 10/1000us waveform, suitable for surface mount applications.600W SMBJxx(C)A-AU Series TVS diodes in SMB package offer low profile, low inductance, and high surge capability with 600W peak pulse power at 10/1000us waveform, suitable for surface mount applications requiring robust transient protection.600W SMBJxx(C)A-AU Series transient voltage suppressor diodes in SMB package offer low leakage current, fast response time, high peak pulse power handling, and are suitable for surface mount applications requiring robust ESD protection.600W transient voltage suppressor diode in SMB package with 10/1000μs pulse rating, low leakage current, fast response time, and operating temperature from -55 to +150°C, suitable for surface mount applications. Original PDF
    badge SMCJ300A
    Jiangsu JieJie Microelectronics Co Ltd 1500W SMCJ Series transient voltage suppressor diodes in SMC package offer low profile, low inductance, and high surge capability with 1500W peak pulse power at 10/1000 us waveform, suitable for surface mount applications.1500W SMCJ Series transient voltage suppressor diodes in SMC package offer low profile, low inductance, 10/1000 μs pulse handling, and high ESD protection up to ±30kV, suited for surface mount applications. Original PDF
    badge SMA6J300A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor in DO-214AC (SMA) case with 600W peak pulse power, glass passivated die, available in uni- and bi-directional versions, rated for operating temperatures from -55 to +150°C.Surface mount transient voltage suppressor in DO-214AC (SMA) package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and low leakage current.Surface mount transient voltage suppressor in DO-214AC (SMA) package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, fast response, UL 94V-0 rated epoxy case.Surface mount transient voltage suppressor in DO-214AC (SMA) package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, fast response, UL 94V-0 rated epoxy case. Original PDF
    badge 6.6SMDJ300A
    Leiditech 6.6SMDJ series surface mount TVS diode with 6600W peak pulse power, glass passivated chip, low profile package, fast response time, and AEC-Q101 qualification for transient voltage protection.6.6SMDJ series surface mount TVS diode with 6600W peak pulse power, glass passivated chip junction, low profile package, fast response time, and AEC-Q101 qualification for transient voltage protection in electronic circuits.6.6SMDJ series TVS diode for surface mount, 6600W peak pulse power at 10x1000us, glass passivated chip, low profile, fast response <1ps, operating temperature -55 to +150C, designed to protect against lightning and transient voltage events. Original PDF
    badge SMAJ300A
    Shenzhen Heketai Electronics Co Ltd SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operate with a working peak reverse voltage range from 5V to 440V.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes in SMA package offer high surge capability, low clamping voltage, fast response time, and operating junction temperature up to 150°C, suitable for transient voltage protection applications.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, 5% or 10% breakdown voltage tolerance, low inductance, high surge current capability up to 713A, and peak pulse power rating of 400W.SMAJ5.0(A) through SMAJ440(A) series are small surface mount TVS diodes in SMA (DO-214AC) package, featuring low inductance, high surge capability up to 40A, peak pulse power of 400W at 10/1000 μs, and fast response time less than 1ps.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and operating temperature from -55 to +150 °C.SMAJ5.0(A) through SMAJ440(A) series surface mount TVS diodes feature unidirectional and bidirectional options, glass passivated junction, low inductance, fast response time under 1 ps, high surge current capability up to 40 A, and peak pulse power rating of 400 W with a 10/1000 μs waveform.SMAJ5.0(A) through SMAJ440(A) series TVS diodes in SMA package feature glass passivated junction, low inductance, fast response time less than 1.0 ps, peak pulse power of 400 W, and peak surge current up to 40 A. Original PDF
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    J300A Price and Stock

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    Littelfuse Inc SMBJ300A

    TVS DIODE 300VWM 486VC DO214AA
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    SMC Diode Solutions SMBJ300A

    TVS DIODE 300VWM 486VC DO214AA
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    DigiKey () SMBJ300A Digi-Reel 11,929 1
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    Bourns Inc SMBJ300A

    TVS DIODE 300VWM 486VC DO214AA
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    Suzhou Good-Ark Electronics Co Ltd SMBJ300A

    TVS DIODE 300VWM 486VC DO214AA
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    YAGEO Corporation SMCJ300A-TR13

    TVS DIODE 300VWM 486VC DO214AB
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    J300A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MJ300A2F55

    Abstract: MOTOROLA 4221 d 2095 transistor
    Contextual Info: 6367254 MOTOROLA SC CXSTRS/R F I M OTOROLA •a S E M IC O N D U C T O R b 3ti7 H S 4 96D 81511 D D fllS ll fi —— I D T -3 3 Order this data sheet by M J300A2F55/D TECHNICAL DATA IMPN S ilic o n P o w e r T ra n sisto r M o d u le M J300A2F55 Energy M an age m e n t Series


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    J300A2F55/D J300A2F55 MK145BP, J300A MJ300A2F55 MOTOROLA 4221 d 2095 transistor PDF

    photo transistor L14F

    Abstract: photo transistor 2n5777 2N5779 L1402 L14F 2N5780 L14A502 L14f photo transistor L14B1 photo transistor L14e2
    Contextual Info: OPTO ELECTRONICS DETECTORS— PHOTOTRANSISTORS Photo Current @ H = Tungsten 2mW/cm2 @ 2870° K II Min. mA JEDEC No. GE Type: Rise 8, Fall Times Typical Photo Current GaAs Source II Mat. (mA) II Min. (mA) II Max. (mA) V e to tf U se e) Min. Package Outline


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    L14B1 L14B2 L14B3 L14B4 L14D1 2N5777 L14D2 2N5778 L14D3 2N5779 photo transistor L14F photo transistor 2n5777 L1402 L14F 2N5780 L14A502 L14f photo transistor photo transistor L14e2 PDF

    transistor c331

    Abstract: L302A CONN TRBLK 4 l305a J300B mfr c304 J301G L303A C0603X5R6R3-106M J301A
    Contextual Info: Si3480MS8-KIT E VALUATION K IT U SER ’ S G UIDE FOR TH E Si3480 POWER MANAGEMENT CONTROLLER 1. Introduction In Power over Ethernet PoE Power Sourcing Equipment (PSE), typically, not all PoE ports are connected to loads, and the ports that are connected to loads draw substantially less than the maximum power defined in the


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    Si3480MS8-KIT Si3480 transistor c331 L302A CONN TRBLK 4 l305a J300B mfr c304 J301G L303A C0603X5R6R3-106M J301A PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    U1898

    Contextual Info: F8 9-97 Small Outline Surface Mount Package Devices N ^H A N N E rsÌLÌcO N T Ù N C T ÌO N T ÌE L D -E F F E C T TRANSISTORS Id s s V g s (O FF ) •g s s BVGSS Device Type Conditions Limits Min @IG Max @Vqs Min Max VDS M m (nA) (V) (V) (V) (V) Id (nA)


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    BF244C BF246A BF246B BF246C BF256A NJ132 NJ26L U1898 PDF

    MPF103

    Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
    Contextual Info: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5


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    TP5951 TP5952 TP5953 TP6449 MPF103 J300B J112A MPF104 MPF105 BF244A BF246A NJ32 PDF

    NJ450

    Abstract: nj26 interfet INTERFET BF256B
    Contextual Info: F8 9 -9 7 Small Outline Surface Mount Package Devices N-CH ANN EL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type BVg s S V gS(OFF) >g s s Min (V) m Max (nA) SMP BF244C SMP BF246A SMP BF246B SMP BF246C SMP BF256A -3 0 -2 5 -2 5 -2 5 -3 0 -1.0 -1.0


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    BF244C BF246A BF246B BF246C BF256A BF256B BF256C SMPJ108 SMPJ109 SMPJ110 NJ450 nj26 interfet INTERFET PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 PDF

    BC2640

    Abstract: smp6453
    Contextual Info: IN T E R F E T CORP »F|Ma5bfiflfl o o o o iza i SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS a tT A = 2S°C . ^BHICSS - - Device Type Min. V fti le ItiA) Max. (nA) SMP 5951 SMP 5952 SMP 5953 SMP 6451 SMP 6452


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    BC264A BC264B 6C264C BC2640 BF244A BF244B BF244C BF246A BF246B BF246C smp6453 PDF

    pj211

    Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117
    Contextual Info: INT ER F E T CORP 2bE D • 4fl2bflflä 0 0 0 0 2 3 6 T ■ C1 T '- Z Z - Z S ' -r~3s-~?.5 N Channel JFETs _ SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrical Characteristics at TA = 25°C VGSlo»i V Bfl|GSS less Ui lG


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    NJ132 NJ132 pj211 J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117 PDF

    scr FIR 3d

    Abstract: scr C106 SCR c106 PIN CONFIGURATION scr FIR 3D 41 U307 AD6620 GS00494 H40DM integrated circuit u304 72V285
    Contextual Info: a AD6620 Evaluation Board Manual Introduction The following document describes the operation of the AD6620 evaluation board. In addition to the board, two software programs are also utilized. The first program is the Control Software, AD6620.exe, described in this manual.


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    AD6620 AD6620" AD6620. AD6620 74LVQ00 scr FIR 3d scr C106 SCR c106 PIN CONFIGURATION scr FIR 3D 41 U307 GS00494 H40DM integrated circuit u304 72V285 PDF

    mv silicon c320

    Abstract: CONN TRBLK 4 mv silicon c320 datasheet DIODE cd c326 transistor c331 Si3452 J300B C320 MBRS3100T3 U202B
    Contextual Info: Si3452MS8-EVB Si3452MS8 E VALUATION B OARD U SER ’ S G UIDE 1. Introduction The Si3452MS8 8-port evaluation kit Si3452MS8-KIT is intended for Power over Ethernet (PoE) Power Sourcing Equipment (PSE) system designers interested in evaluating the Quad-port Si3452 PSE controller. While evaluation


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    Si3452MS8-EVB Si3452MS8 Si3452MS8-KIT Si3452 Si3453, Si3452 Si3453 mv silicon c320 CONN TRBLK 4 mv silicon c320 datasheet DIODE cd c326 transistor c331 J300B C320 MBRS3100T3 U202B PDF

    NPD5564

    Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
    Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership


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    IntegraU404 LSU405 LSU406 LS841 LS842 LS421 LS422 LS423 LS424 NPD5564 NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638 PDF

    Contextual Info: a AD6620 Evaluation Board Manual Introduction The following document describes the operation of the AD6620 evaluation board. In addition to the board, two software programs are also utilized. The first program is the Control Software. This software is described in this manual


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    AD6620 AD6620. 50-pin AD6640 PDF

    TP6449

    Abstract: MPF106 J300C MPF105
    Contextual Info: -“ sPRAGÏÏË/SEniCOND GR OU P 8 5 14 0 1 9 SPRAGUE, ^3 J> Ô513Ô5G m S E M I C O N D S / ICS D003b0E 3> 93D 03602 7 ô • = 2 ^ - 2 5 " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C V g s [0 1


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    D003b0E O-226AA/STYLES TP6449 MPF106 J300C MPF105 PDF

    dna100

    Abstract: mpf103 MPF107
    Contextual Info: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 SPRA GU E. T3 » • Q50433Ô S E M I C O N D S / ICS D G ü 3 b Q 2 7 ■ ALGR 2> 93D 03602 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH


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    Q50433Ô TP5951 TP5952 TP5953 TP6449 TP6450 TP6451 TP6452 TP6453 TP6454 dna100 mpf103 MPF107 PDF

    U204B

    Contextual Info: Si3452MS8-KIT Si3452MS8 E VALUATION B OARD U SER ’ S G UIDE 1. Introduction The Si3452MS8 8-port evaluation kit Si3452MS8-KIT is intended for Power over Ethernet (PoE) Power Sourcing Equipment (PSE) system designers interested in evaluating the Quad-port Si3452 PSE controller. While evaluation


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    Si3452MS8-KIT Si3452MS8 Si3452 Si3453, Si3452 Si3453 U204B PDF

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


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    J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431 PDF

    E110 FET

    Abstract: TIS58 fet MOTOROLA J210 TIS58 JF1033B J300 Siliconix JF1033S InterFET 16M SOT-23 ta82
    Contextual Info: JUNCTION FET Item Number Part Number Y BR GSS loss 9f. (V) (A) Min (S) Max 800u 1.0m 800u 4.5m 800u 1.5m 1.5m 6.0m 6.0m 400u 25 25 25 25 25 25 25 25 1.0m 1.5m 1.6m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 4.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m :;prgue~,ec


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    MPF109W BFT46 MPF109R JF1033B MPF109N J204-18 MPF256 SMP5668 E110 FET TIS58 fet MOTOROLA J210 TIS58 J300 Siliconix JF1033S InterFET 16M SOT-23 ta82 PDF