MPF103
Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
Contextual Info: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5
|
OCR Scan
|
tp5951tp5952tp5953tp6449+8mpf103j300bj112ampf104mpf105bf244abf246anj32
|
PDF
|
J300D
Abstract: E212 siliconix MP5912 GAA 645 BF246A
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) gf. Min (S) Max VGS(Off) Max (V) IGSS Max (A) CI. Max (F) PD Max (W) Derate at Toper (WrC) JOC) Max Package Style N-Channel JFETs, (ContI d) 5 10 15 20 J109•18 MFE2011 MFE2011 TPJ109
|
Original
|
mfe2011tpj109pn5163smp5163+7tmpf5163tp5163mp5912j300de212 siliconixgaa 645bf246a
|
PDF
|
TP6449
Abstract: MPF106 J300C MPF105
Contextual Info: -“ sPRAGÏÏË/SEniCOND GR OU P 8 5 14 0 1 9 SPRAGUE, ^3 J> Ô513Ô5G m S E M I C O N D S / ICS D003b0E 3> 93D 03602 7 ô • = 2 ^ - 2 5 " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C V g s [0 1
|
OCR Scan
|
d003b0eo-226aa/stylestp6449mpf106+2j300cmpf105
|
PDF
|
dna100
Abstract: mpf103 MPF107
Contextual Info: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 SPRA GU E. T3 » • Q50433Ô S E M I C O N D S / ICS D G ü 3 b Q 2 7 ■ ALGR 2> 93D 03602 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH
|
OCR Scan
|
q50433tp5951tp5952tp5953+9tp6449tp6450tp6451tp6452tp6453tp6454dna100mpf103mpf107
|
PDF
|