J 2N2907A Search Results

2N2907AUB

Contextual Info: ¡J8BBBBB88& p | M iwiHBBffi smssssPe .rfHHHHHHHHMh. 1m1 itittnnnnn hhhhhhk-. loniftBHhr. I Ir ^888o 88% #f 1 l D a t a S he e t No. 2 N 2 9 0 7 A U B $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2907A Type 2N2907AUB G eom etry 0600 P olarity PNP Q ual Level: J A N -J A N S

Contextual Info: ¡J8BBBBB88& p |M iwiHBBffi smssssPe .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. loniftBHhr. r o f l I I ^88888% # 1 Da ta S he e t No. 2 N 2 9 0 7 A $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2907A Type 2N2907A G eom etry 0600 P olarity PNP Q ual Level: J A N -J A N S

2N6987 MOTOROLA

Abstract: 2N6987 MIL-STD-750 2072 motorola transistor 2N2907A
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b?2S4 QDâfe.453 1 | ‘X'H3~2S PNP Hermetic Silicon 2N6987' 2N6988 Quad General-Purpose Transistors Dual-In-Line and Flatpack Full Mil-S-19500 Qualified to JA N , J T X and J T X V Levels 2N6987 CERAMIC CASE 632-08, STYLE 1 Î

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2222A TO-92

Abstract: 2N2222A plastic 2N2907A TO-92 K 2056 transistor transistor 2n2222a data sheet to-92 transistor K 2056 Transistor 2N2222A 2N2907A plastic 2N2222A npn transistor 2n2222a transistor
Contextual Info: 2N2222A NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 Complementary PNP type available 2N2907A G H Collector J 3 A D 2 PACKAGING INFORMATION B Base Weight: 0.2056 g

2N3055E specification

Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
Contextual Info: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349

RNW transistor

Abstract: 2n3486a 2N3485
Contextual Info: TYPES 2N3485, 2N3485A, 2N3486. 2N3486A P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 5 7 8 8 5 , J U L Y 1 965 DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • Electrically Identical to 2N2906, 2N2906A, 2N2907, and 2N2907A in

2N3350

Abstract: Thyristor TO39 2N2906 2N2906A 2N2907 2N2907A 2N2914 2N2915 2N2916 2N2917
Contextual Info: Type No. BS/CECC Polarity 2N2906\ CV-0 PN P 2N2906A; PNP 1CV' ° 2N2907 1f f j CV-0 PN P CV-0 PN P 2N2907A 2N2913y1 50002-186 NPN Dual 6 1 3 31 87 37E SEMELAB L T D •c hpE @ VCE & lc Package VCEO cont T018 T018 T018 T018 T077 40 60 -40 60 45 0.6 0.6 0.6

2n2907Jan

Abstract: N906a 2N2907AJAN
Contextual Info: SEM IC O N D U C TO R t e c h n ic a l d a ta 2N2906JAN, JTX, JTXV 2N2906AJAN, JTX, JTXV 2N2907JAN, JTX, JTXV 2N2907AJAN, JTX, JTXV, J A N S C R V ST A LO fJC S 2805 Veterans Highway Suite 14 Processed per M IL-S-19500 291 PNP Silicon Small-Signal Transistors

switched reluctance motor IGBT

Abstract: HD-705-6 spra420 irf740 switching 3 phase motor driver power inverter schematic diagram irf740 3 hp 1500 rpm a.c. induction motor winding data emerson three phase dc motor driver service note switched reluctance motor parameter IGBT for switched reluctance motor fan motor winding formula
Contextual Info: Application Report SPRA600 - October 1999 A Variable-Speed Sensorless Drive System for Switched Reluctance Motors Stephen J. Fedigan, Ph.D. and Charles P. Cole DSPS Research and Development Center ABSTRACT With the advent of high-speed digital signal processors DSPs specialized for motion control

CS5012A

Abstract: CS5014 CS5016 cs5016-jp32 BT 815 transistor atl64
Contextual Info: CS5016/14/12A 16, 14, & 12-Bit, Self-Calibrating A/D Converters Description Features - The CS5012A/14/16 are 12,14 and 16-bit monolithic an­ alog to digital converters with conversion times of 7.2 |js, 14.25 |js and 16.25 |j s . Unique self-calibration circuitry

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

N2222

Abstract: SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100
Contextual Info: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B

SL100B

Abstract: SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N4030 N2222A sg103
Contextual Info: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B

MAX715CWG

Abstract: MAX714 motorola transistor 2N2907A Bt 35 transistor Bt 35 F transistor HX749 coil 2n2222a MAX715 MAX716EVKIT TO-213
Contextual Info: 19-4507; Rev. 1 ;3 /9 2 / l/ l/ J X I/ l/ l B attery-P ow ered Supply System s G e n e ra l D e s c rip tio n F e a tu re s ♦ Four Logic-Controlled +5V Regulators The MAX716 com bines circuitry for four low-dropout linear

LB 122 transistor

Abstract: 2N2907A surface mount 2N2907A HCT2907A JAN2N2907A ma131
Contextual Info: OPTEK TEC H NO LO GY INC 4flE » • L^SSaO 000145 1 110 ■ Product Bulletin OTK _ £>j OPTEK M a y 1989 Surface Mount PNP General Purpose Transistor Type HCT2907A Features T 2/7 -Q°i Absolute Maximum Ratings TA = 25°C unless otherwise noted) • Surface mountable on ceramic or printed

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

bcy5b

Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
Contextual Info: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

2n3072

Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35

N2905

Abstract: N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2904A 2N2906A
Contextual Info: PNP SWITCHING T A B LE 4 SILICO N PLA N A R M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S Type V c EO Max VcE sat at hFE f j Min at at Switching Times (M ax) at n 1 The devices shown in this table are characterised for general medium voltage, medium and

Contextual Info: PLESSEY SEI1IC0ND/DISCRETE | TS DÌf| 752D533 O D D ^ E S 3 95D 04925 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E T? Z D L .J NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS i The transistors shown in this table are characterised for low noise, low level amplification and are particularly

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

BCY79-9

Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
Contextual Info: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.