J 2N2906 Search Results

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2n2906

Abstract: PN2221 PN2906A 2N2221A 2N2906A PN2906
Contextual Info: 2N 2906 PN 2906 • 2N2906A ■ PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES J CASE TO-18 CASE T0-92A Ä CBE EBC 2N290ë 2N2906A PN2906 PN2906A THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM

2N2907

Abstract: 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906
Contextual Info: 2N2906, 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching max .0.50 Metal case J E D E C TO -18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings

1N916

Abstract: 2N2906E
Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V.

f-10Hz

Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 ・Low Leakage Current C FEATURES : ICEX=-50nA Max. , IBL=-50nA(Max.) D @VCE=-30V, VEB=-3V.

Contextual Info: SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA Max. , IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V.

2N2906

Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907
Contextual Info: LUCAS LEDEX/ fil» D LUCAS 5b 07013 QODGin fi 1.8W PNPGENERAL PURPOSE SMALL SIGNAL TRANSISTORS 2N2906 2N2907 j These transistors are silicon planar epitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose

2N3055E specification

Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
Contextual Info: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349

RNW transistor

Abstract: 2n3486a 2N3485
Contextual Info: TYPES 2N3485, 2N3485A, 2N3486. 2N3486A P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 5 7 8 8 5 , J U L Y 1 965 DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • Electrically Identical to 2N2906, 2N2906A, 2N2907, and 2N2907A in

2N3350

Abstract: Thyristor TO39 2N2906 2N2906A 2N2907 2N2907A 2N2914 2N2915 2N2916 2N2917
Contextual Info: Type No. BS/CECC Polarity 2N2906\ CV-0 PN P 2N2906A; PNP 1CV' ° 2N2907 1f f j CV-0 PN P CV-0 PN P 2N2907A 2N2913y1 50002-186 NPN Dual 6 1 3 31 87 37E SEMELAB L T D •c hpE @ VCE & lc Package VCEO cont T018 T018 T018 T018 T077 40 60 -40 60 45 0.6 0.6 0.6

2n2907Jan

Abstract: N906a 2N2907AJAN
Contextual Info: SEM IC O N D U C TO R t e c h n ic a l d a ta 2N2906JAN, JTX, JTXV 2N2906AJAN, JTX, JTXV 2N2907JAN, JTX, JTXV 2N2907AJAN, JTX, JTXV, J A N S C R V ST A LO fJC S 2805 Veterans Highway Suite 14 Processed per M IL-S-19500 291 PNP Silicon Small-Signal Transistors

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

N2222

Abstract: SL100B pnp SL100 SK100B SL100 npn NPN pnp MATCHED PAIRS 2n2905A 2N2219A BC188B SL100A N2222A NPN SL100
Contextual Info: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B

SL100B

Abstract: SL100 TRANSISTORS SL100A SL100 npn NPN SL100 BF107 SL100h N4030 N2222A sg103
Contextual Info: SILICON TRANSISTORS SEMICONDUCTORS Electrical Characteiistics At T j-2 5 'C Maximum Ratings TYPE NPN [PNP /2 N 3 7 0 1 /S N 4 0 3 0 /'SN 4031 /•'’2N4032 ^JN 4033 J3CY11S ''S K 1 0 0 •fS&lOOA ISKIOOB rSKlOOH 1J^K IO I '.SK 102 SL100 «* SL100A 3 SL100B

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

bcy5b

Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
Contextual Info: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

2N2368

Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
Contextual Info: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

2n3072

Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35

N2905

Abstract: N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2904A 2N2906A
Contextual Info: PNP SWITCHING T A B LE 4 SILICO N PLA N A R M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S Type V c EO Max VcE sat at hFE f j Min at at Switching Times (M ax) at n 1 The devices shown in this table are characterised for general medium voltage, medium and

Contextual Info: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at

BCY79-9

Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
Contextual Info: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.

BF681

Abstract: BF272 BF272A BC116 KT361G BF679 BFR38 KT361E BF509 LOW-POWER SILICON PNP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 30 ~~~~~ +~~~~~~~EFC BFR38 BFR38 BF516 BF272A BF272A BF272S BF970A BF970A MPS4248 MPS4248 IMBT3905 2SA523A 2N2904 2N2906 PN2904 SF220 NthAmerSemi Semelab NthAmerSemi SGS•Ates NthAmerSemi

D2N2905A

Abstract: ic 2905a
Contextual Info: S G S -T H O M S O N R fflD is œ iL iO ÏÏM iD g i 2 N 2 9 0 4 A -2 N 2 9 0 5 A 2 N 2 9 0 6 A -2 N 2 9 0 7 A GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec