IXYS IGBT Search Results

Contextual Info: IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 30A Peak

IXDN514

Abstract: IXDN414
Contextual Info: Preliminary Technical Information IXDI514 / IXDN514 14 Ampere Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected over entire Operating Range

IXDD414CI

Abstract: VM0580
Contextual Info: PRELIMINARY DATA SHEET IXDD414PI IXDD414YI IXDD414CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak

Contextual Info: □ IXYS «*>•< Three Phase Rectifier Bridge VRRM = 1200-1600 V with IGBT and Fast Recovery Diode for Braking System 'd A V = 51 A Preliminary data V RRM Type V 1200 1600 VUB 51-12 N01 VUB 51-16 N01 Symbol Test Conditions Maximum Ratings Vw RRM ^dAV ^dAVM

2N7000 MOSFET

Abstract: dc motor for 24v
Contextual Info: IXDD404 4 Ampere Dual Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V

IXDD514

Abstract: IXDD514D1
Contextual Info: Preliminary Technical Information IXDD514 / IXDE514 14 Ampere Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected over entire Operating Range

Contextual Info: IXDD414PI / 414YI / 414CI / 414SI 14 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 35V

fully protected p channel mosfet

Contextual Info: IXDD414PI / 414YI / 414CI 14 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 35V

Ultrafast MOSFET Driver

Abstract: 408CI
Contextual Info: IXDD408PI / 408SI / 408YI / 408CI 8 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V

Contextual Info: □ IXYS Ultra-Low VCE sat „, „ IGBT ix g n V CES 60N60 ^C25 V CE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES Continuous ±20

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT Lightspeed™ Series Symbol TestConditions Maximum Ratings v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C 24 A ^C90

T0800TB45E

Abstract: T0800 D-68623 S200N d686 IGBT 800 cr 406 transistor E0900NC45C
Contextual Info: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

IXDI509D1

Contextual Info: IXDI509 / IXDN509 9 Ampere Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 9 Amps • High Peak Output Current: 9A Peak • Wide Operating Range: 4.5V to 35V

Contextual Info: □ IXYS Advanced Technical Information IXFH 52N30Q IX F K 52N30Q IXFT 52N30Q HiPerFET Power MOSFETs Q -Class V,DSS ^D25 R DS on t = 300 V = 52 A = 60 mQ < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Low Gate Charge and Capacitances

Contextual Info: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: □ IXYS Preliminary data IXGP12N60U1 Low V 'c IGBT with Diode V C E sat Combi Pack Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 24 A U 90 Tc = 9 0 °C 12 A ^CM Tc = 25°C, 1 ms

30n60b

Abstract: B2045
Contextual Info: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

TOp-264 vg

Contextual Info: □ IXYS Preliminary data V DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS VGSM Continuous ±20

Contextual Info: □ IXYS ADVANCE INFORMATION ^D25 100V 100V 170A 170A trr DS on a a IXFN170N10 IXFK170N10 D v DSS E E o o HiPerFET Power MOSFET 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol v Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions Td = 25°C to 150°C

Contextual Info: □ IXYS H H ifl JL æ* X IXGH 32N60CD1 HiPerFAST IGBT with Diode VCES I C25 VCE SAT typ tf1(typ) Light Speed Series V A V ns 600 60 2.1 55 Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i

ES760

Contextual Info: Li IXYS Mil 150-12 A4 IGBT Modules ^C 25 V CES V C E s a t typ. Short Circuit SOA Capability MID 150-12 A4 MDI 150-12 A4 180 A 1200 V 2.2 V Square RBSOA M il MID ’ I I MDI I' ' M : : sc^J 9 0 -+ , 3 I l P re lim in a ry data TO S ym bo l C o n d itio n s

Contextual Info: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i

75n120

Contextual Info: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ

Tvj-150

Contextual Info: VWI 35-06P1 IC25 = 31 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack in ECO-PAC 2 S9 Preliminary N9 X 18 L9 N5 A1 R5 W 14 C1 A5 D5 H5 K 10 Pin arangement see outlines F3 G1 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES