IXYS IGBT Search Results

Contextual Info: IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 30A Peak

D430 mosfet

Abstract: lm339 igbt driver cmos 4000 series CMOS 4000 CMOS-4000 IXDS430SI vm0580-02f D430 IXDD430 S430 1B
Contextual Info: IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 30A Peak

IXDS430SI

Abstract: IXDD430 IXDI430 IXDN430 IXDS430 ixd430yi
Contextual Info: IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 30A Peak

IXDD408CI

Abstract: ixdd408pi Cd4011a
Contextual Info: PRELIMINARY DATA SHEET IXDD408PI IXDD408YI IXDD408CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak

IXDN514

Abstract: IXDN414
Contextual Info: Preliminary Technical Information IXDI514 / IXDN514 14 Ampere Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected over entire Operating Range

IXDD414CI

Abstract: VM0580
Contextual Info: PRELIMINARY DATA SHEET IXDD414PI IXDD414YI IXDD414CI Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak

cmos 4000 series

Abstract: IXDD414YI IXDD414PI
Contextual Info: IXDD414PI IXDD414YI AD VANCE TECHNICAL INFORMA TION ADV INFORMATION Ultrafast High Current MOSFET Driver Features Description • Built using the advantages and compatability of CMOS and IXYS HDMOSTM process. • Latch-Up Protected • High Peak Output Current: 14A Peak

lm339 ic data

Abstract: IXDD504D2
Contextual Info: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps

Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak

IXDD504D2

Contextual Info: IXDD504/ IXDE504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps

12v 5A smps

Abstract: ixdd509d1 ixdd509 DE509
Contextual Info: Preliminary Technical Information IXDD509 / IXDE509 9 Ampere Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 9 Amps

pF3900

Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak

low side gate driver

Abstract: IXDF504D1
Contextual Info: IXDF504/ IXDI504 / IXDN504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps • High Peak Output Current: 4A Peak

Contextual Info: □ IXYS IGBT Module VII125-12G4 IC DC Half-Bridge Configuration V , CES = 125 A = 1200 V V CE(sat) = 2.9 V High Short Circuit SOA Capability Symbol Test C onditions VCES Tj = 25°C to 150°C T,J = 25°C to 150°C;’ RCat ^ = 1 M fl Maximum Ratings 1200

Contextual Info: □ IXYS «*>•< Three Phase Rectifier Bridge VRRM = 1200-1600 V with IGBT and Fast Recovery Diode for Braking System 'd A V = 51 A Preliminary data V RRM Type V 1200 1600 VUB 51-12 N01 VUB 51-16 N01 Symbol Test Conditions Maximum Ratings Vw RRM ^dAV ^dAVM

T0.8N100

Contextual Info: □ IXYS Advanced Technical Information IXGA8N100 IXGP 8N100 IGBT V CES = = = ^C25 V CE sat 1000 V 16 A 2.7 V Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES VGEM Continuous ±20

T0800EB

Contextual Info: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: WESTCODE An Date:- 14 Feb, 2010 Data Sheet Issue:- P1 IXYS Company Prospective Data High Power Sonic FRD Type E0460QC45C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4500 V VRSM Non-repetitive peak reverse voltage, (note 1)

E2250VF25C

Contextual Info: WESTCODE An Date:- 14 Feb, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data High Power Sonic FRD Type E2250VF25C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2500 V VRSM Non-repetitive peak reverse voltage, (note 1)

Ultrafast MOSFET Driver

Contextual Info: IXDD414PI / 414YI / 414CI 14 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch-Up Protected • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 35V

Contextual Info: WESTCODE An Date:- 14 Feb, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data High Power Sonic FRD Type E2250VF25C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2500 V VRSM Non-repetitive peak reverse voltage, (note 1)

IXDD514D1

Contextual Info: Preliminary Technical Information IXDD514 / IXDE514 14 Ampere Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected over entire Operating Range

Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 20N100 IXGP 20N100 V CES = ^C25 V CE sat = 1000 V 40 A 3.0 V Maximum Ratings Symbol Test Conditions V CES VCGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGE = 1 M£2 1000 V V GES Continuous ±20 V

Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGK 120N60B IXGX 120N60B VCES ^C25 V CE sat Maximum Ratings Symbol Test C onditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 600 600 V V v vGEM Continuous Transient ±20 ±30