SOT227B package
Abstract: DSA300 SMPS Solar Battery chargers ixys DSA300I100NA DSA300I200NA DSA300I45NA ups over smps advantages
Contextual Info: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 32 374 4020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Introduces Its Largest Single Die Schottky Diode For Increased Efficiency In Power Rectification Biel, Switzerland, October 14, 2010 – IXYS Corporation NASDAQ: IXYS , a leader in power
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ot-227bsot227b packagedsa300smps solar battery chargers+5ixysdsa300i100nadsa300i200nadsa300i45naups over smps advantages
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LBA716
Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division
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n1016ch-2555lba716ixdd630+6darlington transistor arrayv/cpc3701cpc1006ncpc1014ncpc1019ncpc1219
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IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC
Abstract: EVLD02-II IXLD02SI laser diode driver ic Directed Energy industrial pulse generators schematic EVLD02 Laser Diode driver
Contextual Info: FOR IMMEDIATE RELEASE Contact: Yvonne Clark IXYS Colorado Directed Energy, Inc. Tel: (970) 493-1901 ext. 26 IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC Fort Collins, CO. July 13, 2010. IXYS Corporation (NASDAQ IXYS), a leader in power
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evld02-iiixld02siixys colorado introduces evld02-ii evaluation board for the ixld02si laser diode driver iclaser diode driver ic+4directed energyindustrial pulse generators schematicevld02laser diode driver
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IXYS Introduces Higher Operating Temperatures for Bi-Polar Modules
Abstract: MDMA200P1600SA MCMA200P1600SA MCMA200PD1600SA Phase-leg Rectifier Diode
Contextual Info: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 323 744 020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Introduces Higher Operating Temperatures for Bi-Polar Modules Biel, Switzerland, May 4, 2010 – IXYS Corporation NASDAQ: IXYS , a leader in power
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ixys introduces higher operating temperatures for bi-polar modulesmdma200p1600samcma200p1600samcma200pd1600sa+1phase-leg rectifier diode
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LDS8710
Abstract: solar converter LCD Display backlight Solar home lighting system String Lights
Contextual Info: FOR IMMEDIATE RELEASE IXYS Contact: Dr. Octav Chirica IXYS Corporation Tel: 408-457-9000 IXYS Introduces New LED Driver Family with 40 V Integrated Synchronous Rectifier to drive up to 42 LEDs Milpitas, CA, and Biel, Switzerland. June 29, 2010 – IXYS Corporation NASDAQ: IXYS
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lds8710/11lds8720/24/26lds8711lds8710+4solar converterlcd display backlightsolar home lighting systemstring lights
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7" LCD DISPLAY
Abstract: LCD Display backlight LDS8710 solar converter
Contextual Info: FOR IMMEDIATE RELEASE IXYS Contact: Dr. Octav Chirica IXYS Corporation Tel: 408-457-9000 IXYS Introduces Demo Boards for New LED Driver Family with 40 V Integrated Synchronous Rectifier to drive up to 42 LEDs Milpitas, CA, and Biel, Switzerland, August 19, 2010 – IXYS Corporation NASDAQ: IXYS
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lds8710/11lds8720/24/26lds87117" lcd display+3lcd display backlightlds8710solar converter
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XYS launches New PolarP2TM Power MOSFET Family
Abstract: Ixtq460p2 IXFB120N50P2 mosfet ixys IXTH450P2 IXTP450P2 IXTQ450P2 IXTQ470P2 ixtq460
Contextual Info: IXYS Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS launches New PolarP2TM Power MOSFET Family Milpitas, CA. and Biel, Switzerland. July 15, 2010 – IXYS Corporation NASDAQ:IXYS announces today the release of its new PolarP2TM Power MOSFET family, IXYS’ latest generation of fast and
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12ohm/nanocoulombsxys launches new polarp2tm power mosfet familyixtq460p2ixfb120n50p2+6mosfet ixysixth450p2ixtp450p2ixtq450p2ixtq470p2ixtq460
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IGBT inverter calculation
Abstract: 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V
Contextual Info: IXAN0070 Drive with the IXYS XPT IGBT IXYS used its expertise to design the optimal IGBT for motor drives applications By Iain Imrie, Jeroen van Zeeland, Ulrich Kelberlau, Vladimir Tsukanov and Elmar Wisotzki IXYS Corporation IXYS introduces the XPT IGBT, IXYS newest generation of short-circuit rated IGBTs with paralleling
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ixan0070igbt inverter calculation3 phase igbt inverter designdesign drive circuit of igbt+6inverter circuit using igbt moduleigbtigbt sixpackigbt junction temperature calculationigbt 600v 100a short circuitigbt chip 1700v
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PLUS247
Abstract: ixys diode diode 3000v
Contextual Info: FOR IMMEDIATE RELEASE IXYS Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 e-mail: sales@ixys.net IXYS Introduces New High Voltage 2500V and 3000V BiMOSFETs Biel, Switzerland and Milpitas, CA. October 13, 2009 - IXYS Corporation NASDAQ:
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IXEP1400
Abstract: CPC1706 CPC1020N
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
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IXEP1400
Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
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ch-2555n1016ixep1400cpc7601+8cpc1907bcpc1106ncpc1004ncpc1006ncpc1009ncpc1114ncpc1333ix21844
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IXAN0062
Abstract: 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet
Contextual Info: IXAN0062 IXYS Power MOSFET Products Abdus Sattar, IXYS Corporation This paper presents IXYS Corporation’s power MOSFET products and their typical application information. Power MOSFETs are widely used in power switching applications due to their features of easy control, fast
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ixan00621000v p-channel mosfetdmosfetpower mosfets+5mosfet 1000vsilicon mosfet 1000vmosfetsp-channel depletion mosfetsdepletion mode power mosfet
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MOSFET Based Chopper
Abstract: MKE11R600DCGFC MOSFET Based Chopper applications MKE11R600DC CoolMOS mosfet 12A 600V Solar inverter power module design of boost chopper circuit
Contextual Info: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 323 744 020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Releases the Highest Density, Highest Efficiency MOSFET Solution With Silicon Carbide Technology in an Isolated Integrated Package
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mosfet based choppermke11r600dcgfcmosfet based chopper applicationsmke11r600dc+4coolmosmosfet 12a 600vsolar inverter power moduledesign of boost chopper circuit
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mosfet 1200V 40A
Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160
Contextual Info: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the
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ixbh40n160200nsmosfet 1200v 40asilicon mosfet 1000v+8mosfet 1500vigbt testingpnp 1000v 2aigbt transistor 1200v, 25amosfet 1200v 3aigbt 20a 1200vpnp 1200v 2a40n160
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IXAN0016
Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A
Contextual Info: IXAN0016 IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the
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ixan0016ixbh40n160200nspnp transistor 1000v+8pnp 1200v 2asnubber circuits mosfetsilicon mosfet 1000vmosfet 1000vmosfet 1200v 3amosfet 1500v35n120amosfet 1200v 40a
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IXAN0065
Abstract: IXTQ130N10T mosfet ixys
Contextual Info: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance
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ixan0065ixth/ixtq130n10tixtq130n10tmosfet ixys |
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xenon hid ballast
Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary
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e153432com/ixan0022xenon hid ballastxenon hid block diagram+8circuit diagram ballast xenonsingle phase inverters circuit diagramsolar inverters circuit diagramhid lamp ballasthid igniterxenon ballastsingle phase inverter mosfetballast diagram
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Contextual Info: Welcome to the world of IXYS Semiconductors! IXYS is made up of a team that is dedicated to providing efficient, cost effective, semiconductor solutions to meet a multitude of power control needs. Headquartered in California’s Silicon Valley, IXYS has differentiated itself by focusing on the higher power end of the semiconductor product spectrum.
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Inverter Welder
Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
Contextual Info: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM
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pb60igbta3b3c3inverter welderinverter welder circuitresonant inverter for welding+7smps welder inverterresonant converter for weldingixgr48n60c3d1600v igbt dc to dc boost converterixgh48n60c3d1smps inverter full bridge for weldingfull bridge inverter
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IXAN0022
Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
Contextual Info: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS
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ixan0022isoplus220tmisoplus247tmisoplus264+14isoplus220isolpus247advantku4-498/xku4-498/xo-247ku4-499ku4-495ku4-498isoplusixys crossku4499isoplus ixys mountingku3-3814490 mosfet
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IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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d-68623ixbod1-08ixbod1-09ixbod1-10+12dsep30-06brdsep30-12crixgp70n33ixgq90n33sk0604ixtp76n075ixer35n120d1ixgp70n33tbm-adh60-18avbo19sk0712ixth1n250
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Contextual Info: Power Schottky Rectifier Diodes □ IXYS i xvsi>o -e>£ I
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EVLD02
Abstract: IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD DEIC420 IXDD414CI RF MOSFETs 10mhz mosfet EVDN404
Contextual Info: MOSFET DRIVER IC'S SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 These ultra-fast high current drivers are optimized to drive IXYS RF MOSFETs and IXYS IGBTs for high efficiency performance in RF generators, laser diode drivers, pulse generators, motor drive and power conversion applications. They
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fast recovery epitaxial diodes
Contextual Info: wMrn ÏWsw» HiPer Fast Recovery Epitaxial Diodes Reg. Nr. 2743-02 □ IXYS
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