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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTA02N250	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO263	Original	PDF		5
IXTA02N250HV	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2500V 0.2A TO263	Original	PDF	184.84KB
IXTA02N450HV	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 200MA TO263	Original	PDF		5
IXTA05N100	IXYS	1000V high voltage MOSFET	Original	PDF	69.11KB	2
IXTA05N100HV	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1KV 750MA TO263	Original	PDF	194.4KB
IXTA05N100SN	IXYS	Transistor Mosfet N-CH 1000V 0.75A 3TO-263 AA	Original	PDF	544.93KB	4
IXTA06N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.6A TO-263	Original	PDF		4
IXTA08N100D2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA D2PAK	Original	PDF		5
IXTA08N100D2HV	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH	Original	PDF	194.11KB
IXTA08N100P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 0.8A TO-263	Original	PDF		4
IXTA08N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 0.8A TO-263	Original	PDF		4
IXTA08N50D2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 800MA D2PAK	Original	PDF		5
IXTA100N04T2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-263	Original	PDF		6
IXTA100N15X4	IXYS	MOSFET N-CH 150V 100A TO263AA	Original	PDF	246.82KB

IXTA102N15T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-263	Original	PDF		7
IXTA10N60P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A D2-PAK	Original	PDF		4
IXTA10P50P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263	Original	PDF		6
IXTA10P50P-TRL	IXYS	MOSFET P-CH 500V 10A TO263	Original	PDF	180.68KB
IXTA10P50PTRL	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-263AA	Original	PDF		6
IXTA10P50P-TRL	IXYS	MOSFET P-CH 500V 10A TO263	Original	PDF	188.12KB

...

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IXYS Corporation IXTP44N10T MOSFET N-CH 100V 44A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP44N10T	Tube	3,205		1	1 $2.72 10 $2.72 100 $1.21 1000 $0.90 10000 $0.80	Buy Now
Chip 1 Exchange	IXTP44N10T		11,805			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTA94N20X4 MOSFET 200V 94A N-CH ULTRA TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA94N20X4	Tube	1,318		1	1 $14.18 10 $14.18 100 $7.57 1000 $7.26 10000 $7.26	Buy Now
Infineon Technologies AG BSS127IXTSA1 SMALL SIGNAL MOSFETS PG-SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	BSS127IXTSA1	Cut Tape	875		1	1 $0.36 10 $0.22 100 $0.14 1000 $0.09 10000 $0.09	Buy Now
	BSS127IXTSA1	Digi-Reel	875		1	1 $0.36 10 $0.22 100 $0.14 1000 $0.09 10000 $0.09	Buy Now
Avnet Americas	BSS127IXTSA1	Tape & Reel		10 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
Rochester Electronics	BSS127IXTSA1		77,650		1	1 - 10 - 100 $0.06 1000 $0.05 10000 $0.04	Buy Now
ComSIT USA	BSS127IXTSA1		2,250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	BSS127IXTSA1	Cut Tape	5,575	0 Weeks, 1 Days	25	1 - 10 - 100 $0.13 1000 $0.13 10000 $0.13	Buy Now

EBV Elektronik	BSS127IXTSA1			11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXTA76P10T MOSFET P-CH 100V 76A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA76P10T	Tube	724		1	1 $7.70 10 $7.70 100 $3.82 1000 $3.26 10000 $3.26	Buy Now
IXYS Corporation IXTN400N20X4 Ultra Junction X4-Class Power
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN400N20X4	Tube	298		1	1 $35.26 10 $26.11 100 $23.13 1000 $23.13 10000 $23.13	Buy Now
Mouser Electronics	IXTN400N20X4		328			1 $36.89 10 $29.07 100 $27.06 1000 $27.06 10000 $27.06	Buy Now

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IXT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP220N04T2 Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75 Contextual Info: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40	Original	IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 04-24-08-C IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75	PDF
IXTT16P60P Abstract: IXTH16P60P 16P60P Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTH16P60P IXTT16P60P VDSS ID25 = = ≤ RDS on TO-268 (IXTT) P-Channel Enhancement Mode Avalanche Rated G Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH16P60P IXTT16P60P O-268 100ms 16P60P IXTT16P60P IXTH16P60P 16P60P	PDF
10N90 Contextual Info: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient	Original	12N90 O-204 O-247 O-247 O-204 10N90	PDF
3N120 Abstract: on6017 IXTP3N120 Contextual Info: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS	Original	3N120 O-220 728B1 123B1 728B1 065B1 3N120 on6017 IXTP3N120	PDF
60n10 Abstract: IXTH60N10 Contextual Info: Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ	Original	60N10 TJM15 O-268 728B1 123B1 728B1 065B1 60n10 IXTH60N10	PDF
weight TO-264 Contextual Info: Advance Technical Information IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100	Original	250N10 728B1 123B1 728B1 065B1 weight TO-264	PDF
60N15 Contextual Info: Advance Technical Information Standard Power MOSFET VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ IXTH 60N15 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150	Original	60N15 O-247 728B1 123B1 728B1 065B1 60N15	PDF
60N25 Abstract: D2560 UPS SIEMENS Contextual Info: Advance Technical Information IXTH 60N25 Standard Power MOSFET VDSS = 250 V ID cont = 60 A Ω RDS(on) = 46 mΩ N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250	Original	60N25 728B1 123B1 728B1 065B1 60N25 D2560 UPS SIEMENS	PDF
IXTK80N25 Abstract: 80N25 megamos Contextual Info: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS	Original	80N25 IXTK80N25 80N25 megamos	PDF
24P20 Contextual Info: Standard Power MOSFET IXTH 24P20 P-Channel Enhancement Mode Avalanche Rated RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -200 V VGS Continuous ±20 V VGSM Transient ±30 V A ID25 TC = 25°C	Original	24P20 O-247 728B1 123B1 728B1 065B1 24P20	PDF
110N30 Contextual Info: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ	Original	110N30 728B1 123B1 728B1 065B1 110N30	PDF
50n30 Abstract: N-channel MOSFET to-247 50a IXTH50N30 TO-247 weight Contextual Info: Advance Technical Information IXTH 50N30 IXTT 50N30 High Current Power MOSFET VDSS ID25 = 300 V = 50 A Ω = 65 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	50N30 O-247 O-268 728B1 123B1 728B1 065B1 50n30 N-channel MOSFET to-247 50a IXTH50N30 TO-247 weight	PDF
75N30 Contextual Info: Advance Technical Information IXTK 75N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 75 A Ω = 42 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 300	Original	75N30 O-264 728B1 123B1 728B1 065B1 75N30	PDF
1n80 Contextual Info: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	O-263 O-252 728B1 1n80	PDF

16p20 Abstract: ixth 16p20 Contextual Info: Standard Power MOSFET IXTH 16P20 P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = -200 V = -16 A = 0.16 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	16P20 O-247 728B1 123B1 728B1 065B1 16p20 ixth 16p20	PDF
01N100D Abstract: high voltage mosfet n-channel Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C	Original	01N100D O-220AB high voltage mosfet n-channel	PDF
10P60 Abstract: 125OC Contextual Info: IXTH 10P60 VDSS = -600 V ID25 = -10 A RDS on = 1Ω Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -600 V VGS Continuous ±20	Original	10P60 O-247 -300V 728B1 125OC	PDF
DC244 Contextual Info: STI644004G1-70SVGS pcbhw^ - j 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-70SVGS is a 4M x 64 bits Dynamic RAM high density memory module;. The Simple Technology STI644004G1-70SVGS consist of s ixteen CMOS	OCR Scan	STI644004G1-70SVGS 144-PIN 124ns STI644004G1-70SVGS 24-pin 300-mil DC244	PDF
Thyratron Abstract: GL393 393a thyratron tube GL393A Gl-393-A GL-393 Contextual Info: GL-393-A DESCRIPTION A N D R A TIN G E T I-1 3 2 PAGE 1 4-45 IHYRATRON DESCRIPTIO N T he GL-393-A thyratron is designed for regulated-rectifier circuits. The use o f a gas m ixture o f argon and mercury vapor provides constancy of RECOMMENDED FOR characteristics w ithin wide tem perature lim its. The	OCR Scan	GL-393-A GL-393-A K-8277054 ETI-132 Thyratron GL393 393a thyratron tube GL393A GL-393	PDF
75N10 Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V	Original	67N10 75N10 O-204 O-247 O-204 O-247 75N10	PDF
40N30 Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C	Original	35N30 40N30 O-204 O-247 O-204 40N30 IXTH40N30 IXTM35N30 IXTM40N30 40AA	PDF
Contextual Info: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500	OCR Scan	IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 4bflb22b	PDF
I 508 V Abstract: 180N15P IXTK180N15P Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 180N15P VDSS ID25 = 150 V = 180 A Ω RDS on ≤ 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VDSS VGSM Continuous	Original	180N15P I 508 V 180N15P IXTK180N15P	PDF
8N50P Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	8N50P O-263 O-220 O-263 O-220) 8N50P	PDF

IXT Search Results

IXT Datasheets (500)

IXT Price and Stock

IXYS Corporation IXTP44N10T

IXYS Corporation IXTA94N20X4

Infineon Technologies AG BSS127IXTSA1

IXYS Corporation IXTA76P10T

IXYS Corporation IXTN400N20X4

IXT Datasheets Context Search

IXTP220N04T2

IXTT16P60P

10N90

3N120

60n10

weight TO-264

60N15

60N25

IXTK80N25

24P20

110N30

50n30

75N30

1n80

16p20

01N100D

10P60

DC244

Thyratron

75N10

40N30

I 508 V

8N50P