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    Vishay Intertechnologies RH50N30R00JS03

    - Bag (Alt: RH50N30R00JS03)
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    Avnet Americas RH50N30R00JS03 Bag 8 Weeks 30
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    • 1000 $32.28
    • 10000 $31.40
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    Newark RH50N30R00JS03 Bulk 30
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    • 100 $35.14
    • 1000 $32.94
    • 10000 $32.21
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    STMicroelectronics STB50N30M8AG

    - Tape and Reel (Alt: STB50N30M8AG)
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    Avnet Americas STB50N30M8AG Tape & Reel 1,000
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    Avnet Silica STB50N30M8AG 13 Weeks 1,000
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    onsemi FGPF50N30TTU

    - Rail/Tube (Alt: FGPF50N30TTU)
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    Avnet Americas FGPF50N30TTU Tube 400
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    Littelfuse Inc IXFK150N30X3

    Mosfet, N-Ch, 300V, 150A, To-264P; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes
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    Newark IXFK150N30X3 Bulk 277 1
    • 1 $25.59
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    • 100 $14.57
    • 1000 $14.28
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    RS IXFK150N30X3 Bulk 8 Weeks 25
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    Littelfuse Inc IXFH150N30X3

    Mosfet, N-Ch, 300V, 150A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:150A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes
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    Newark () IXFH150N30X3 Bulk 2 1
    • 1 $27.41
    • 10 $19.33
    • 100 $18.10
    • 1000 $17.69
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    IXFH150N30X3 Bulk 1
    • 1 $27.23
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    Master Electronics IXFH150N30X3 300
    • 1 -
    • 10 $22.05
    • 100 $19.93
    • 1000 $18.93
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    50N30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    50n30

    Abstract: N-channel MOSFET to-247 50a IXTH50N30 TO-247 weight
    Contextual Info: Advance Technical Information IXTH 50N30 IXTT 50N30 High Current Power MOSFET VDSS ID25 = 300 V = 50 A Ω = 65 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		50n30o-247o-268728b1+5123b1065b1n-channel mosfet to-247 50aixth50n30to-247 weight PDF

    Contextual Info: Advance Technical Information IXTH 50N30 IXTT 50N30 High Current Power MOSFET VDSS ID25 = 300 V = 50 A Ω = 65 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		50n30o-247728b1123b1+1065b1 PDF

    50N30

    Abstract: N-channel MOSFET to-247 50a
    Contextual Info: Advance Technical Information IXTH 50N30 High Current Power MOSFET VDSS ID25 RDS on = 300 V = 50 A Ω = 65 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V


    Original     		50n30o-247728b1123b1+2065b1n-channel mosfet to-247 50a PDF