IXDR30N120 Search Results

IXDR30N120 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXDR30N120		IXYS	TRANS IGBT CHIP N-CH 1200V 50A 3ISOPLUS 247	Original	PDF	59.93KB	4
IXDR30N120		IXYS	1200V high voltage IGBT with optional diode	Original	PDF	68.48KB	4
IXDR30N120D1		IXYS	TRANS IGBT CHIP N-CH 1200V 50A 3ISOPLUS 247	Original	PDF	59.93KB	4
IXDR30N120D1		IXYS	1200V high voltage IGBT with optional diode	Original	PDF	68.48KB	4

IXDR30N120 Price and Stock

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IXYS Corporation


IXYS Corporation IXDR30N120 IGBT NPT 1200V 50A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXDR30N120	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXDR30N120D1 IGBT NPT 1200V 50A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXDR30N120D1	Tube			1	1 $14.19 10 $14.19 100 $8.65 1000 $7.27 10000 $7.27	Buy Now

IXDR30N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	30N120 30N120 247TM E153432 IXDR30N120	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
IXDR30N120 Abstract: 30N120 5027A R30N120 30n120d1 MJ10 Contextual Info: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 5027A R30N120 30n120d1 MJ10	PDF
IXDR30N120 Abstract: 30N120 50 a diode 600v high R30N120 Contextual Info: IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package VCE sat typ = 1200 V = 50 A = 2.4 V (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM E153432 G G C E E Isolated Backside*	Original	30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 50 a diode 600v high R30N120	PDF
35N60 Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n Contextual Info: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220	Original	O-263 O-247 20N60 35N60 STO-227 O-268 247TM O-220 20N120 30N120 75N120 ixys ixdn 75 n 120 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n	PDF
diode 439 Abstract: 30N120 IXDR30N120 R30N120 Contextual Info: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	30N120 30N120 247TM E153432 IXDR30N120 diode 439 IXDR30N120 R30N120	PDF