30N120 Search Results
30N120 Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TRS30N120HB |
|
SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, 2 in 1, TO-247 | Datasheet | ||
| TW030N120C |
|
N-ch SiC MOSFET, 1200 V, 60 A, 0.04 Ω@18 V, TO-247 | Datasheet |
30N120 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 30N120D2 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.6KB | 1 |
30N120 Price and Stock
onsemi NVBG030N120M3SSILICON CARBIDE (SIC) MOSFET - E |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
NVBG030N120M3S | Cut Tape | 1,040 | 1 |
|
Buy Now | |||||
|
NVBG030N120M3S | 761 |
|
Buy Now | |||||||
|
NVBG030N120M3S | Cut Tape | 1,575 | 1 |
|
Buy Now | |||||
|
NVBG030N120M3S | 1 |
|
Get Quote | |||||||
|
NVBG030N120M3S | 1,600 | 1 |
|
Buy Now | ||||||
|
NVBG030N120M3S | 1,600 |
|
Get Quote | |||||||
|
NVBG030N120M3S | 19 Weeks | 800 |
|
Buy Now | ||||||
|
NVBG030N120M3S | 1,600 | 20 Weeks | 800 |
|
Buy Now | |||||
|
NVBG030N120M3S | 800 |
|
Buy Now | |||||||
IXYS Corporation IXGH30N120B3D1IGBT PT 1200V TO-247AD |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXGH30N120B3D1 | Tube | 1,016 | 1 |
|
Buy Now | |||||
|
IXGH30N120B3D1 | 285 |
|
Buy Now | |||||||
|
IXGH30N120B3D1 | Tube | 300 |
|
Buy Now | ||||||
|
IXGH30N120B3D1 | 1 |
|
Get Quote | |||||||
|
IXGH30N120B3D1 | 78 |
|
Get Quote | |||||||
IXYS Corporation IXYH30N120C3D1IGBT 1200V 66A TO-247 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXYH30N120C3D1 | Tube | 463 | 1 |
|
Buy Now | |||||
|
IXYH30N120C3D1 | 340 |
|
Buy Now | |||||||
|
IXYH30N120C3D1 | Tube | 300 |
|
Buy Now | ||||||
|
IXYH30N120C3D1 | 300 |
|
Buy Now | |||||||
onsemi NTHL030N120M3SSILICON CARBIDE (SIC) MOSFET EL |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
NTHL030N120M3S | Tube | 446 | 1 |
|
Buy Now | |||||
|
NTHL030N120M3S | Bulk | 1 |
|
Buy Now | ||||||
|
NTHL030N120M3S | 352 |
|
Buy Now | |||||||
|
NTHL030N120M3S | Bulk | 139 | 1 |
|
Buy Now | |||||
|
NTHL030N120M3S | 450 | 1 |
|
Buy Now | ||||||
|
NTHL030N120M3S | 450 | 450 |
|
Buy Now | ||||||
|
NTHL030N120M3S | 19 Weeks | 450 |
|
Get Quote | ||||||
|
NTHL030N120M3S | 20 Weeks | 30 |
|
Buy Now | ||||||
|
NTHL030N120M3S | 5,700 | 21 Weeks | 30 |
|
Buy Now | |||||
|
NTHL030N120M3S | 450 |
|
Buy Now | |||||||
Infineon Technologies AG IHW30N120R5XKSA1IGBT TRENCH FS 1200V 60A TO247-3 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IHW30N120R5XKSA1 | Tube | 376 | 1 |
|
Buy Now | |||||
|
IHW30N120R5XKSA1 | 2,575 |
|
Buy Now | |||||||
|
IHW30N120R5XKSA1 | Bulk | 40 | 1 |
|
Buy Now | |||||
|
IHW30N120R5XKSA1 | 195 | 1 |
|
Buy Now | ||||||
|
IHW30N120R5XKSA1 | 20 Weeks | 240 |
|
Buy Now | ||||||
|
IHW30N120R5XKSA1 | 120 | 30 |
|
Buy Now | ||||||
30N120 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol |
Original |
30N120 30N120 247TM E153432 IXDR30N120 | |
30N120
Abstract: 30n120d
|
OCR Scan |
30N120 30N120 IXDT30N120 O-247 D-68623 30n120d | |
|
Contextual Info: Advanced Technical Information IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package = 1200 V = 60 A = 2.4 V VCE sat typ (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM |
Original |
30N120 30N120 247TM E153432 D-68623 | |
IXDR30N120
Abstract: 30N120 5027A R30N120 30n120d1 MJ10
|
Original |
30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 5027A R30N120 30n120d1 MJ10 | |
|
Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type unshielded GND electrode |
Original |
30N1200 | |
30N120AContextual Info: Advanced Data High Voltage IGBT with Diode IXDH 30N120AU1 VCES IC25 VCE sat typ SCSOA Capability Symbol Test Conditions V CES Tj =25°C to 150°C Vco„ T, = Maximum Ratings 25°C to 150°C; RGE= 1 M fi 1200 V 1200 V V GES Continuous ±20 V V QE„ T ransient |
OCR Scan |
30N120AU1 O-247 30N120A | |
30n120
Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
|
Original |
30N120 30N120 O-247 O--268 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600 | |
|
Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable |
Original |
30N1200 | |
|
Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable |
Original |
30N1200 | |
|
Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode |
Original |
30N1200 | |
|
Contextual Info: Capacitive Sensors CFAK 30N1200 Capacitive Sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm |
Original |
30N1200 | |
|
Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 25 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift |
Original |
30N1200 | |
IXDH30N120AU1
Abstract: 30N120A
|
OCR Scan |
30N120AU1 O-268 IXDH30N120AU1 30N120A | |
|
Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode |
Original |
30N1200 | |
|
|
|||
30N120D1
Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1
|
Original |
30N120 30N120 IXDH30N120 D-68623 30N120D1 30n120d T30N120 ixdh 30n120d1 | |
30n12Contextual Info: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift |
Original |
30N1200 30n12 | |
IXDH30N120
Abstract: 30N120 IXDH30N120D1 30N120D1 30n12
|
Original |
30N120 30N120 IXDH30N120 IXDH30N120 IXDH30N120D1 30N120D1 30n12 | |
|
Contextual Info: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V IC25 = 60 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C |
Original |
30N120 30N120 IXDH30N120 | |
diode 439
Abstract: 30N120 IXDR30N120 R30N120
|
Original |
30N120 30N120 247TM E153432 IXDR30N120 diode 439 IXDR30N120 R30N120 | |
30N120AU1
Abstract: robot control TO-268 IXDH30N120AU1
|
Original |
30N120AU1 O-268 30N120AU1 robot control TO-268 IXDH30N120AU1 | |
|
Contextual Info: 30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering |
Original |
NGTB30N120IHRWG NGTB30N120IHR/D | |
|
Contextual Info: 30N120CN / 30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The 30N120CN and 30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar |
Original |
HGTG30N120CN HGTG5A30N120CN HGT5A30N120CN TA49281. | |
|
Contextual Info: Capacitive proximity sensors CFAK 30 Sn = 30 mm Capacitive proximity sensors sample drawing 72 58 M30 x 1,5 SW 36 LED Pot sample picture general data special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable |
Original |
30N1200 30N3200 30P1200 30P3200 | |
|
Contextual Info: Capacitive sensors Versatile, contactless, durable Edition 2012/2013 With capacitive sensors from Baumer you can complete almost any task. Visibly better: Baumer sensors. The Baumer Group is an internationally leading manufacturer of sensors and system solutions for factory and process automation. Partnership, precision and |
Original |
CH-8501 0x/12 11xxxxxx | |