IXD_604 Search Results

ixdn604pi

Abstract: IXDD604D2 IXDN604 ixdn604sia ixdf604pi ixdd604 IXDD604PI IXDI604PI IXD_604 B054
Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers

Abstract: ixdi604 ixd 604 IXDN604 IXDD604 IXDF604 ixd_604 8pin dual gate driver
Contextual Info: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers IXD_604 Gate Driver ICs are ideal for driving IXYS power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. July 6, 2010 - IXYS Corporation NASDAQ:IXYS

IXDN604

Abstract: IXDI604 IXDD604 IXDN604PI IXDD604PI IXDF604 IXDD604D2 ixd_604 IXDN604SI IXDD604D2TR
Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

IXDN604

Abstract: IXDF604 IXDI604 IXDD604 IXDI604SIATR IXDN 443 DFN-8
Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

IXDD604PI

Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

Contextual Info: IXD_604SI & SIA INTEGRATED CIRCUITS DIVISION Automotive Grade 4-Ampere, Dual Low-Side, Ultrafast MOSFET Drivers Features Description • • • • The IXD_604SI and IXD_604SIA are automotive grade, dual high-speed gate drivers that are qualified according to AEC Q100 standards. Each of the two

IXDD604D2

Abstract: IXDD604PI ixdn604pi ixd 604 IXD604SIA IXDI604PI IXDI604SIATR IXDN604 IXDF604PI 604PI
Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

IXDD604

Abstract: IXDD604SIA IXDN604 IXDN604SI ixdi604 IXDN604SIA IXDD604SI ixd_604 IXDF604SIA IXDN604PI
Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -55°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

IXD_604

Abstract: IXDD604PI IXDN604SIATR IXDI604pi
Contextual Info: IXD_604 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V

IXDD604

Abstract: IXDD604SI IXDN604 IXDN604SI IXDD604SIA 604SI ixd_60 IXDF604SI IXDI604
Contextual Info: IXD_604SI & SIA INTEGRATED CIRCUITS DIVISION Automotive Grade 4-Ampere, Dual Low-Side, Ultrafast MOSFET Drivers Features Description • • • • The IXD_604SI and IXD_604SIA are automotive grade, dual high-speed gate drivers that are qualified according to AEC Q100 standards. Each of the two

IXEP1400

Abstract: CPC1706 CPC1020N
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

Contextual Info: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

hcpl 322j

Abstract: hcpl-322j HCPL316
Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

IRFD630

Abstract: HCPL-322J HCPL322J TO-247AB
Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

ACPL-322J

Abstract: MIC4452YN
Contextual Info: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

IXYS CORPORATION

Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS

IXEP1400

Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

Contextual Info: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area

Contextual Info: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch