GA08JT17 Search Results

Contextual Info: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA08JT17-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA08JT17-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.3 $ * $Date: 26-AUG-2014 $ * * GeneSiC Semiconductor Inc.

HCPL-322J

Contextual Info: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity