IXDN Search Results

IXDI414PI

Abstract: IXDN414PI IXDI414SI 12.5W bypass transistor smps circuit diagrams 12v 5a N414 414PI IXDI414CI
Contextual Info: IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire

IXDD409CI

Abstract: IXDD409PI IXDD409SI IXDD409YI smps LM339
Contextual Info: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.

55N120D1

Contextual Info: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G E G E E IXDN 55N120 Preliminary Data E IXDN 55N120 D1 miniBLOC, SOT-227 B E153432 E Symbol Conditions

IXDD402

Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak

IXDF502D1

Contextual Info: IXDF502 / IXDI502 / IXDN502 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 2 Amps • High Peak Output Current: 2A Peak

IXDF502D1

Contextual Info: IXDF502 / IXDI502 / IXDN502 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 2 Amps • High Peak Output Current: 2A Peak

ixdd402

Abstract: IXDN402SI IXDF402SIA IXDN402 IXDN402PI IXDN402SIA SOIC-16
Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak

IXDN0014

Abstract: IXCP02M35 IXCY01N90E IXCP01N90E IXCP10M35 IXCP30M35A IXCP50M35 IXCP50M35A IXCP100M45 IXCY02M35
Contextual Info: 3540 Bassett Street Santa Clara, CA 95054, USA Phone: +1-408-982-0700 Fax: +1-408-727-7087 IXDN0014 July 28, 2004. End of life some non-switchable AC and DC current regulators Description of change: End of Life for below part types in the current regulator family.

ixys ixdn 75 n 120

Abstract: 75N120 IXDN75N120 160mJ
Contextual Info: IXDN 75N120 High Voltage IGBT VCES = 1200 V = 150 A IC25 VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Maximum Ratings E = Emitter ①, G = Gate, Symbol Conditions VCES TJ = 25°C to 150°C 1200

75N120A

Abstract: 75N120 IXDN75N120A 1TM4 MI1200 15i2 0504N
Contextual Info: □ IXYS IXDN 75N120A High Voltage IGBT V CES 1200 V ^C25 120 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES ^ = 25°C to 150°C 1200 V V CGR ^ = 25°C to 150°C; RGE = 1 M£i 1200 V V GES Continuous

Contextual Info: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak

75N120

Contextual Info: IXDN 75N120 High Voltage IGBT VCES = 1200 V IC25 = 150 A VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kW

Contextual Info: IXDN 55N120 D1 VCES = 1200 V = 100 A IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR

IXDN0018

Abstract: MOSFET and IGBT die and 150 mm wafer products IGBT die
Contextual Info: IXDN0018 3540 Bassett Street Santa Clara, CA 95054, USA Phone: +1-408-982-0700 Fax: +1-408-727-7087 October 16, 2003 MOSFET and IGBT die and 150 mm wafer products Customer: Various IXYS product type: MOSFET and IGBT die and 150 mm wafer products. Description of changes:

IXDD409PI

Abstract: IXDI409PI IXDN409PI IXDD409CI IXDD409SI IXDI409YI IXDN409CI IXDI409SI IXDI409CI IXDD409YI
Contextual Info: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.

IXDI414

Abstract: ixd414 IXDN414 IXDN414PI IXDI414PI IXDN414SI IXDI414CI
Contextual Info: IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire

IXDD409

Abstract: 2N7000 MOSFET protection smps LM339 IXDD409PI IXDI409PI IXDN409 IXDN409PI IXYS 409SI 92-0002 IXDD409CI
Contextual Info: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected

IXDN404

Abstract: IXDD404 EVDN404 IXDI404PI mosfet driver dip 16 IXDD404PI IXDN404PI SOT-227 pcb EVDD404 IXDI404
Contextual Info: EVDD404 IXDD404, IXDI404 And IXDN404 Gate Driver IC Evaluation Board General Description The EVDD404 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the IXYS IXDD404, IXDI404 and IXDN404 gate drive ICs, as well as to

75N120

Abstract: 0504N IXDN75N120A
Contextual Info: □IXYS IXDN 75N120A High Voltage IGBT V CES ^C25 V CE sat typ 1200 V 120 A 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 1200 V mini BLOC, SOT-227 B

IXDI509D1

Contextual Info: IXDI509 / IXDN509 9 Ampere Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up protected up to 9 Amps • High 9A peak output current • Wide operating range: 4.5V to 30V

ixd414

Abstract: IXDN414 414PI N414 IXDI414PI IXDN414PI smps circuit diagrams 12v 5a IXDI414CI
Contextual Info: IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire

IXDD409PI

Abstract: 409YI DD409 IXDD409 IXDI409PI IXDN409 IXDN409PI 409CI dn409 IXDN409SI
Contextual Info: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.

Contextual Info: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak

IXDF504D1

Contextual Info: IXDF504/ IXDI504 / IXDN504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps • High Peak Output Current: 4A Peak