ITRON Search Results

jumo itron 702042

Abstract: jumo ITRON 702043 JUMO ITRON 04 jumo itron JUMO ITRON 04 b 70.2040 Jumo 70.2041 PT1000 JUMO type 15 JUMO itRON 34 C1213
Contextual Info: b70.2040en.bk Seite 1 Mittwoch, 19. November 2008 10:15 10 Type 702042 Type 702044 Type 702041 JUMO iTRON Type 702043 Compact microprocessor controllers B 70.2040 Operating Instructions Type 702040 2008-11-11/00357918 b70.2040en.bk Seite 2 Mittwoch, 19. November 2008 10:15 10

sfn065d

Abstract: itron 406
Contextual Info: 8368602 SOL ITRON DEVICES SFN065D INC 01990 SWITCH MOS PA CKA G E TO-3 IDM VGS PD XL T J oper T . stg UNITS Voltage, Drain to Source Drain Current, Clamped Inductive XDSS V 010 G fs VGS(th). IGSS C ISS CRSS coss ^d(on) t r td ( o f f ) Cf 16 W 20 A -55 to +150

PC437

Abstract: CU24063-Y1A PC860 DS-1552-0001-01 noritake itron CU24063
Contextual Info: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: CU24063-Y1A Specification No: DS-1552-0001-01 Date of Issue: December 5, 2008 00 Revision: December 17, 2008 (01) Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp

GU140X32F-7000

Abstract: GU140X32F WPC1252 5x7 within 6x8 font PC437 PC860 PC865 PC858 7x8 font
Contextual Info: Vacuum Fluorescent Display Module Specification Model: GU140X32F-7000 Specification No: DS-916-0001-03 Date Of Issue: April 11 , 2002 Revision: June 13 , 2002 July 03, 2002 August 30, 2002 Published by NORITAKE ITRON CORP. / Japan http://www.itron-ise.co.jp/

YL303H

Abstract: electric power saver circuits NORITAKE ITRON VFD MODULES 96 x 23 CU24043-Y100 PC858 font display vfd PC437 140CD Receipt font Noritake FONT TABLE
Contextual Info: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: CU24043-Y100 Specification No: DS-1570-0001-00 Date of Issue: January 29, 2009 00 Revision: Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp This specification is subject to change without prior notice.

GU128X64-800B

Abstract: GU128x64 Vacuum Fluorescent Display NORITAKE ITRON VFD MODULES 128 x 64 "Graphic Display" vfd itron 128x64 128X64 character font table connector 26pin MIN20 vfd display japan
Contextual Info: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: GU128X64-800B Specification No: DS-1239-0000-03 Date of Issue: May 19, 2005 Revision: May 1, 2006 December 20, 2007 January 23, 2008 : : PUBLISHED BY NORITAKE ITRON CORP. / JAPAN This specification is subject to change without prior notice.

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: itronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

1N47A

Contextual Info: itronicr discrete devices SEMICONDUCTORS Sem itronics Corp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Nom. Zener Dynamic Zener Temp. Type Voltage, Impedance, Current Coefficient Vz volts Zz (ohms) lz (mA) (% per °C)

2n1478

Abstract: 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886
Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 2 5°C W atts h FE @ lc BVc e (volts) (°C ) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150

43fj

Abstract: S50A3100 S50A315HE S50A360FR S50A360S7
Contextual Info: 15E 0 I 75G3fc»S0 QOQDÔHt. t | R S M ELECTRON/SENS ITRON 7 ^ 3 -0? Ts S ENS/TRON SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 FAX 516 242 9798 TECHNICAL SPECIFICATIONS AVAILABLE W ITH THREE PHASE BRIDGE RECTIFIER

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

SK-68

Abstract: SK6805
Contextual Info: VMWl POSTROMC INDUSTRIES BGJEVES THE DATA ON TH B DRMMN8 TO B E RELIABLE, SM C E THE TECHNGN. INFORMATION IS 6MEN FREE O F CHARGE, THE USER EMPLOYS SUCH MFORfcWDON AT H B OWN D 6C R EIN N AND RISK. POS ITRON« M DU5TRE5 ASSUM ES NO RESFO N SB U IY FOR RESULTS OBTAINED OR DAMAGES

SFN232

Abstract: T-39
Contextual Info: 8368602 SOL ITRON DEVICES iE I a a t a t a a aooscmi i | 70C 02049 1 1 SWITCH MOS SFN232 POWER MOS PACKAGE TO-3 MAXIMUM RATINGS VDS PD *L Tj oper T „ stg Drain Current, Continuous @ T *25°C c Drain Current, Pulsed A • VGS V 200 o IDM Voltage, Drain to Source

SFN106A3

Abstract: IRF120 T-39
Contextual Info: 8368602 SOL ITRON DEVICES INCH'D DE | û 3 h ô b D S 0001171 0 J ~ T-39~ H SW ITCHM OS SFM06A3 POWER MOS DEVICE 100V / 8A N Channel, TO-3 Package, IRF120 Equivalent FEATURES • • • • • • Excellent temperature stability • Ease of paralleling

bul 3040

Abstract: BUL 512 HI SFN433 T-39 10-32 UNF 2A
Contextual Info: 8368602 SOL ITRON DEVICES INC SFN433 70C 02086 SWITCH MOS PA CKA G E TO-3 D T-39-11 f l 3 b ô t i0 a o o o a o f lt . 4 POWER MOS MAXIMUM RATINGS SYMBOL VDS *D ZDM VGS PD XL ^J oper T stg * UNITS PARAMETER Voltage, Drain Co Source Drain Current, Continuous @ T =25°C

JAN2N5157

Abstract: 2N54
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC lF|ä3bflbDS 95D 02851 OOOHfiSl b D |~ T - 3 3 ~ n -JtoUtran ra O M C T ÄTTÄIL ^ Devices, Inc. V E R Y HIGH VOLTAGE, FAST SW ITCHING NPN TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 42 CHIP N U M BER ¿1

C124

Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S [p œ py ? ©ÄTTÄIL © INC 95D 02 91 5 1S D -f - 45- /r DE~|fl3bflh0H OOOa^lS h | “ ÆfigM.rtàM Devices. Inc M EDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION

2N3773 equivalent

Abstract: transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent
Contextual Info: 8368602 SOL ITRON DEVICES re » ? ©atm,®® INC T5 95D DE | f l 3 h a t . 0 E • 02903 00 0 5 ^ 0 3 D □ ^Sww&rßik T~ I — " Devices, Ine MEDIUM VOLTAGE CHIP N U M BER IMPIM SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 31 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.

T-58-H

Contextual Info: SO LITRO N D EV IC ES INC b l 8 3 6 8 6 0 2 SOL ITRON D E V I C E S D E ^ fl3t.flfe.D2 DD01SD7 _ INC fl Ó1C | ~ 01507 D- T'' C V & f Z Z N ' T ITYP6 N°- dk'r. a _ /o / GROUP A A ND/OR PERFORMANCE CHARACTERISTICS NO. SYM BOL CCNOITIONS

solitrondevices

Abstract: Solitron transistor c47
Contextual Info: 8368602 SOL ITRON D E V I C E S INC TS 95 D 0 2 8 3 7 D 3 DE |fi3bflbaa 000S037 1 |"~ Devices, inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 14 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum

DS-952-0001-01

Abstract: PC437 GU280X16G-7002 description of power saver block diagram HT 7002 vfd segment ds vfd PC860 PC865 WPC1252
Contextual Info: Vacuum Fluorescent Display Module Specification Model: GU280X16G-7002 Specification No: DS-952-0001-01 Date Of Issue: August 30, 2002 Revision: November 12, 2002 June 14, 2004 Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp This specification is subject to change without prior notice.

FTA50V

Abstract: er c128
Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DE I A3bflb02 □OOE'ìl'ì 3 | ~ INC 95D 0 2 9 1 9 Ä1TÄ\[L Q ( Devices, Inc' MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum

Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S TS Jm litran INC DE Ì 0 3 h f l b 0 a GDOSTm 95D 0 2 9 1 4 D 4 T _ 7"C mmm •_ * MEDIUM TO HIGH VOLTAGE Devices, Inc. C H IP N U M B ER PIM EPITAXIAL PLAN AR POW ER DIODE CONTACT METALLIZATION Anode: > 50,000 À Aluminum

solitron devices

Contextual Info: ITRON DEVICES INC bl » F | fl3t,flbD2 D D D m 3 a 3 | ~ 836860 2 SOL ITRON DEV ICES INC _ 61C 01432 - A H 7 =7 7 - 6 9 - Bfi/P type no. C B c r / O f 5 GROUP A AND/OR PERFORMANCE CHARACTERISTICS NO. SYMBOL CONDITIONS 1 vS 2 PisJ 3 <L 4 JzCEQ