2N54 Search Results

2N5401

Contextual Info: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V

2N5451

Abstract: 2n5449
Contextual Info: TYPES 2N5449, 2N5450, 2N5451 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 9 , M A R C H 1 9 7 3 SILECTt TRANSISTORS* • For Medium-Power Amplifiers, Class B Audio Outputs, Hi-Fi Drivers • Also Available in TO-92 Versions . . . 2N3704 thru 2N3706

2N5401G

Contextual Info: 2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage

P-Channel JFETs

Abstract: sst5460 SST5461
Contextual Info: 2N/SST5460 Series VISHAY T Vishay Sil icon ix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number V G S o ff ( V ) V (B R )G S S M i n ( V ) 2 N /S S T 5 4 6 0 0 .7 5 to 6 40 1 -1 2 N /S S T 5 4 6 1 1 to 7.5 40 1.5 -2

SST5484

Contextual Info: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number -0 .3 to - 3 -2 5 3 loss Min mA 1 2N/SST5485 -0 .5 to - 4 -2 5 3.5 4 2N/SST5486 -2 1 0 -6 -2 5 4 8 V G S (off) (V) V (B R )G S S Min (V)

Current Regulator Diodes

Abstract: NIP1CHP
Contextual Info: M ID fT-Siliconix J .Æ * * 1• in c o rp o ra te d N-Channel JFET Current Regulator Diodes_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • Single SOT-23 • SST108, SST109, SST110 Single TO-52 (TO-206AC) • 2N5432, 2N5433, 2N5434 Single Chip

2n5463

Contextual Info: SILICONIX INC lfiC D • 2N5460 SERIES fSTSiliconbc JtJm Ö2S473S QQ13ÖSQ fl in c o rp o ra te d P-Channel JFETs _r-'^S-25 The 2N5460 Series are low cost p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog , switchapplications. This series features two ranges of

Contextual Info: 2N5404 2N5405 2N5406 2N5407 SMALL SIGNAL PNP TRANSISTORS IN TO-5 MECHANICAL DATA Dimensions in mm 8.89 0.35 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 38.1 (1.500) min. 0.89 max. (0.035) APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. Small signal PNP transistors for relay

2N3819 equivalent

Abstract: MAF100 sst4416 die 2n3819 equivalent ic
Contextual Info: NH SERIES DIE N-Channel JFETs The NH Series of n-channel JFETs is designed to provide high-performance amplification, especially at C fS iG c o n ix in c o rp o ra te d NH1CHP* N H 2C H P * NH 3CHP* 2N5484 J305 SST305 2N5485 2N3819 2N5486 2N4416 2N4416A J304

N5484

Abstract: 2n5484 equivalent 2N5484 n548
Contextual Info: 2N5484 SERIES N-Channel JFETs C3TS ìBeoniX J .Æ in c o rp o ra te d The 2N5484 Series of n-channel JFETs is designed to provide high-performance amplification, especially at high-frequency. These parts feature low noise 4 dB max @ 400 MHz , high gain (5.5 mS typical @ 400 MHz)

2NS48

Abstract: 2NS484 SST5484
Contextual Info: T e m ic 2N/SST5484 Series Siliconix N-Channel JFETs_ 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gts Min (mS) 2N/SST5484 —0.3 to - 3 -2 5 3 1 2N/SST5485 -0 .5 to - 4

2N5463

Abstract: 2N5465 2N5464 2N5460 2N5461 2N5462 2n5463-5
Contextual Info: S IL IC O N IX INC 1ÎE I> 8 2 54 7 3 5 0013Ä50 S 2N5460 SERIES f ü Z 'S ilic o n ix JtJw • in c o r p o r a ts d P-Channel JFETs _ r - 'ä S - 2 S The 2N5460 Series are low cost p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog , switchapplications. This series features two ranges of

SOT 23 1ft

Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
Contextual Info: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

2N5493

Abstract: vce max 100 ic max 100MA NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5493 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 55V(Min) ·Low Saturation Voltage: VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS ·Designed for a wide variety of medium-power switching and

diode 2N5401

Abstract: 2N5401 2n5401 148
Contextual Info: DC COMPONENTS CO., LTD. 2N5401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ

2N5401

Abstract: transistor 2N5401 1N914 2N5400
Contextual Info: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO

SST5461

Abstract: 2N5460 2n5462 2N5461 SST5460 SST5462 70262
Contextual Info: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9

transistor 2N5461

Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

2N5466

Abstract: 2N5467
Contextual Info: SavantIC Semiconductor Product Specification 2N5466 2N5467 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High-voltage capability ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·They are intended for use in off-line power

2N5496

Abstract: 2N5492 2N5490 2N5494
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION •With TO-220 package ·High power dissipation APPLICATIONS ·For used in medium power and amplifier applications PINNING PIN DESCRIPTION 1 Base

2N5498

Contextual Info: SavantIC Semiconductor Product Specification 2N5498 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Low saturation voltage ·High Safe Operating Area APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications.

2N5496

Abstract: transistor npn 100w amplifier 2N5496 TO-220
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR 2N5496 TO-220 Plastic Package Medium Power Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION Collector Base Voltage (Open emitter)

Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428