IS81 Search Results

S10 diode

Abstract: IS813
Contextual Info: IS813 S10/S7/S5/S3: Photon Coupled Interrupter, 4 Pin Transistor, Fast Switching Datasheet ISOCOM LTD: BSI9000 and CECC20000 Approved Manufacturer Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055

4-pin optoisolator

Contextual Info: IS814-1 TRANSISTOR AC INPUT OPTOCOUPLERS ISOCOM PACKAGES LTD CIRCUIT 4.60 4.60 13.0o 0.26 3.50 6.5 7.62 13.0o 6.50 0.4 3.00 2.70 0.5 1.20 2.54 DESCRIPTION The IS814-1 is a bi-directional input opto-isolator consists of two Gallium Aresenide infrared emitting diodes

Elmo Semiconductor

Abstract: CI 7400 lcc-32 elmo 070d EMC01MS08M02-055D 256KX8 EMC01MS08M02-100D EMC01MS08M03-055C EMC02MS08M02-045D
Contextual Info: ELMO SEMIC ONDUCT OR CORP M3E D • 32*iGSb4 0000025 T M E S C C SRAM SELECTION GUIDE SRAM MODULES PART NUMBER ORG. TECH. SPEEED ns TEMP. MAX. DC CURRENT RANGE c ICC IS81 ISB2 (mA) (mA) (ma) PACKAGE STYLE PINS DIMENSIONS LxWxH (In.) 1 MB DENSITY EMC01MS08M02-055D

IS824

Contextual Info: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 IS814, IS824, IS844 AC Input Type Photocoupler Circuit Features Absolute Maximum Ratings Electrical Characteristics

IS817

Abstract: IS827 IS-817
Contextual Info: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 IS817, IS827, IS847 High Density Mounting Type Photocoupler Circuit Features Description Absolute Maximum Ratings

Contextual Info: TRANSISTOR OPTOCOUPLERS IS817 ISOCOM IS827 4 3 8 7 6 1 2 1 2 3 LTD IS847 5 16 15 14 13 12 11 10 9 4 1 2 3 4 5 6 7 8 DESCRIPTION These devices are single, dual and quad optocouplers. Each channel is composed of a Gallium Arsenide infra-red emitting diode and a silicon phototransistor. Package styles for these devices include 4 pin, 8 pin, and

BF170

Abstract: BF200 transistor bf200 datasheet EL2073C EL2073CN EL2073CS
Contextual Info: 200MHz Unity-Gain Stable Operational Amplifier Features General Description • 200MHz gain-bandwidth product • Unity-gain stable • Ultra low video distortion = 0.01%/0.015° @ NTSC/PAL • Conventional voltage-feedback topology • Low offset voltage = 200µV

LRS13061

Contextual Info: SHARP LRS I 3 0 6 1 Contents Part 1 Product Overview 1. D escription . 2 2. Pin C onfiguration .

INT004

Abstract: MB838200B
Contextual Info: April 1993 Edition 2 .0 FUJITSU DATA S H E E T MB838200B/BL CMOS 8M-BIT MASK READ ONLY MEMORY 512K X 16 1M x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB838200B/BLis aCMOSSi-gate mask-programmable static readonly memory organized as 524,288 words by 16 bits or 1,048,576 words by 8 bits.

Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page

Contextual Info: HM62V864 Series 65536-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-316B Z Rev. 2.0 Jul. 25, 1995 Description The Hitachi HM62V864 is a CMOS static RAM organized 64-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 fim Hi-CMOS process technology. It

TWCD

Abstract: lz-02 lz02
Contextual Info: y Integrated Device Technology, Inc. 16KX32 WRITABLE CONTROL STORE STATIC RAM MODULE FEATURES: • • • • • • • • • 16K x 32 high-performance Writable Control Store WCS Serial Protocol Channel (SPC )— reading, writing and interrogation

dual power supply block diagram

Contextual Info: CMOS 262,144 BIT STATIC RANDOM ACCESS MEMORY FU JITSU MB81C81A-35 MB81C81A-45 May 1988 Edition 1.0 262,144 WORDS X 1 BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY •a The Fujitsu MB81C81A Is 262,144 words x 1 bit static random access memory fabricated with a CMOS technology.

BF170

Abstract: bf200 datasheet BF200 transistor EL2074 EL2074C EL2074CN EL2074CS EL2074CS-T13 EL2074CS-T7 bf200 pin configuration
Contextual Info: 400MHz GBWP Gain-of-2 Stable Operational Amplifier Features General Description • 400MHz gain-bandwidth product • Gain-of-2 stable • Ultra low video distortion = 0.01%/0.015° @NTSC/PAL • Conventional voltage-feedback topology • Low offset voltage = 200µV

Contextual Info: KM6466A/KM6466AL CMOS SRAM 16K x4 Bit Static RAM with OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 25,35,45 ns (max.) • Low Power Dissipation Standby (TTL): 30mA (max.) (CMOS): 2mA (max.) 100/iA (max.) L-Verslon Operating: 120mA (max.) • Single 5V ± 10% Power Supply

AM99C10

Contextual Info: H Am99C10 Advanced Micro Devices 256 x 48 Content Addressable Memory DISTINCTIVE CHARACTERISTICS • 256 word x 48-bit Content Addressable Memory CAM - Optimized for Address Decoding in Local Area Networks (LAN) and bridging applications ■ Each CAM word has a 48-blt register and

UNITED MICROELECTRONICS CORPORATION

Abstract: UM621024 ic 7483 pin diagram UM621024C-10L UM621024CM-70LL ic 7483 ic 7483 pin configuration UM621024CM-70L IS81 UM621024C-70L
Contextual Info: co 5 •§ 2 co co co 03 i l 8 0Í il X ^ « O 1 X 5 a '1 0 H .-3 I3 5 i CM Co co 03 * ■n l ic ? s » 9 5 CNJ a- a ì S 5 5 o 2 c 5 a Iw ■ 3 O* * " I c <3 3 |? ! > - 55 ë x> u i i l i ■ ■ Î C «> c = •S w * >. « <* o ? 8 s„ :g ? 6 H- X3

lem HA

Abstract: 50-PIN dps128m8bny
Contextual Info: DENSE-PAC 1 Megabit High Speed CMOS SRAM M I C R O S Y S T E M S DPS128M8CnY/BnY, DPS128X8CA3/BA3 DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 H igh Speed SRAM devices are a revolutionary new m em ory subsystem using Dense-Pac Microsystems' ceram ic Stackable Leadless C hip Carriers SLCC .

Contextual Info: VCXO-To-6 LVCMOS Outputs ICS81006 DATA SHEET General Description Features The ICS81006 is a high performance, low jitter/ low phase noise VCXO. The ICS81006 works in conjunction with a pullable crystal to generate an output clock over the range of 12MHz – 31.25MHz and

Contextual Info: KM23C32120C CMOS MASK ROM 32M-Bit (4Mx8 CM OS M ASK ROM FEATURES G E N E R A L DESC R IPT IO N • • • • The KM23C32120C is a lully static mask programmable R O M organized 4,194,304 x 8 bit. It is fabricated using slllcon-gate C M O S process technology.

NN 3515

Abstract: SOP28-P-450-1
Contextual Info: LH53515 CMOS 512K 64K x 8 Mask-Programmable ROM FEATURES DESCRIPTION . The LH53515 is a mask-programmable ROM organ­ ized as 65,536 x 8 bits. It is fabricated using silicon-gate CMOS process technology. 65,536 x 8 bit organization . Access time: 150 ns (MAX.)

eprom s 394

Abstract: EPROM 27128 27128 block diagram intel EPROM 27128
Contextual Info: CMOS 128K 16K x 8 OTPROM/EPROM FEATURES • 16,384 • Access times: x 8 bit organization LH57126J: 70/90 ns LH57126: 90 ns • Single +5 V power supply • Low power consumption: Operating: 394 mW (MAX.) The LH57126J is configured in the standard EPROM

Contextual Info: LH57127/J FEATURES • 16,384 x 8 bit organization • Access times: LH57127J: 100 ns MAX. LH57127: 120 ns (MAX.) • Single +5 V power supply • Low power consumption: Operating: 315 mW (MAX.) Standby: 1.05 mW (MAX.) • • CMOS 128K (16K x 8) OTPROM/EPROM

is84 scr

Abstract: IS156 1S121 IS120A IS154 IS84 1s152 scr is100a
Contextual Info: Thyristors - SCR's. The plastic material came« U/L recognition 94 V-O. Max. Repetitive Maximum RMS Peak Off - State On * State Current and Reverse alT c » 50 °C TYPE Voilage It r m s Vdrm &. Vrkm (A) (V) Maximum Peak Surge On - State Current ( Note 1 )