ELMO Search Results

Contextual Info: ELHO SEMICONDUCTOR CORP 43E ELMO D • aSTGSbM 0GÜGQ33 «ESCC EMC01MS08 CMOS STATIC RAM MODULE: 128K x 8 DESCRIPTION The ELMO EMC01MS08 is a 131,072-word x 8-bit high speed CMOS static RAM module suitable for use in low power and high speed applications. It

Contextual Info: ELPAQ A dív¡»lon EMS512K8A of ELMO Semiconductor Corp._ 35 mSSnS 4Mb CMOS STATIC SRAM FEATURES Pin Configuration Pin Description • High density SRAM module A18 C t A ie C 3 AM C • Al# C 4 « c • fs c 1 AS C T

Contextual Info: ELMO EMM02MS08 CMOS STATIC RAM MODULE: 256K x 8 DESCRIPTION The ELMO EMM02MS08 is a 262,144-word x 8-bit high speed BiCMOS static RAM module suitable for use in low power and high speed applications. It is available in several package and speed options, and operates from a single +5V supply.

Contextual Info: ELMO EMC04MS08 CMOS STATIC RAM MODULE: 512K x 8 DESCRIPTION The ELMO EMC04MS08 is a 524,288-word x 8-bit high speed CMOS static RAM module suitable for use in low power and high speed applications. It is available in several package and speed options, and operates from a single +5V supply.

Contextual Info: ELMO SEMIC OND UCTOR CORP M3E D • BSTQSbM QQDDÜS1 0 * E S C C PRELIMINARY T-Hb-\3-»'7 8 M egabit FLASH MEMORY Features: ♦ 1Mb x 8 Organization ♦ Access Time of 120ns ♦ Low Power Operation: Standby: 1mA Max. Operating: 50mA Max. ♦ 10,000 Erase/Program Cycles

Contextual Info: E L MO SEMICONDUCTOR o CORP H3 E D 32TGSb4 0000045 S IESCC EMC04MS08 CMOS STATIC RAM MODULE: 512K x 8 DESCRIPTION The ELMO EMC04MS08 is a 524,288-word x 8-bit high speed CMOS static RAM module suitable for use in low power and high speed applications. It is

BFt 65

Abstract: ELMOS United Detector Technology optical detectors cdi wiring diagram Wiring Diagram logo AS-Interface Avago cdi circuit ELMOS E100 block diagram for optical fiber DETECTOR
Contextual Info: BFT3 03 Optical Bidirectional Transceiver for byteflight SPF Data Sheet Short description of complete functional unit Features The device consists of a LED mounted on a large area photodiode for bidirectional optical transmission in half duplex mode. LED and photodiode are driven by the multifunction IC E100.34C2 from ELMOS.

10015* elmos

Abstract: LHi 878 LDR sensor light dark sensor PIR triac light switch Perkin Elmer ldr four pin PIR sensor LHI 878 PHOTO TRANSISTOR pir sensor light dark sensor light dependent resistor bt136 triac
Contextual Info: MOS M2000C PTY LTD. PIR Light Controller for 3-Wire Applications Microsystems On Silicon Member of ELMOS Semiconductor AG General Description_ Applications_ The M2000C integrated circuit combines all required functions for a single chip Passive Infra Red (PIR) light

Contextual Info: ELPAQ EMS256K8B A division of ELMO Semiconductor Corp._ 35 - 55ns 2Mb CMOS STATIC SRAM FEATURES * High density SRAM module Pin Configuration Pin Description AO- A17 Address Inputs 1/01 -1/08 D ata Inputs/Outputs • Access time 35 - 55ns

Contextual Info: ELPAQ EMS512K8A 35 - 55ns A division of ELMO Semiconductor Corp. 4Mb CMOS STATIC SRAM FEATURES * • • ■ High density SRAM module Organized as 524,288 x 8 Access time 35 - 55ns Low power consumption Standby: 15mW typ. Operating: 325mW(typ.) ■ ■ ■

Contextual Info: ELPAQ EMF1M8A A division of ELMO Semiconductor Coro,_ 8Mb CMOS FLASH MEMORY FEATURES • ■ ■ * ■ ■ ■ ■ * ■ Organized as 1,048,576 x 8 90 ns Access Time Byte Programmable Eraseabie in 1Mb Blocks Low power consumption Power supply voltage 5V±10%

Contextual Info: ELPAQ EMS512K8E A division of ELMO Semiconductor Corp 2 0 - 35f1S 4Mb CMOS STATIC SRAM FEATURES 32 Pin Configuration - High density SRAM module • Organized as 524,288 x 8 ■ Access time 20 - 35ns - Low power consumption Standby: 50mW typ. Operating: 700mW(typ.)

Contextual Info: ELPAQ EMS256K8C 70 - 100ns A division of ELMO Semiconductor Corp. 2Mb CMOS STATIC SRAM FEATURES • High density SRAM module Pin Configuration 3 3 3 Pin Description vcc AO - A17 Address Inputs 1/01 - VOS Data Inputs/Outputs N/C C 1 32 • Organized as 262,144 x 8

91001B

Abstract: 91001B elmos E910.01 E91001B E910.01B Elmos ELMOS 100 SO20-300 ic 555 timer 10 minute 03SP0111E
Contextual Info: SPECIFICATION Date : 23.09.2003 DETAIL SPECIFICATION ELMOS Part Nr : 910.01B Page 1 of 20 E910.01B 8-Way Output Driver QM-Nr.: 03SP0111E.01 SPECIFICATION Date : 23.09.2003 Contents 1 Project Summary 3 1.1 Purpose of Specification 3 1.2 Life Support Policy/Product Liability

Contextual Info: ELPAQ EMS256K8A A division of ELMO Semiconductor 20 - 35ns 2 M b C M O S S T A T IC S R A M FEATURES Pin Configuration High density SRAM module Organized as 262,144 x 8 Access time 20 - 35ns Low power consumption

Contextual Info: ELPAQ EMS256K8B 35 - 55ns A division of ELMO Semiconductor Corp. 2Mb CMOS STATIC SRAM FEATURES High density SRAM module Organized as 262,144 x 8 Access time 35 - 55ns Low power consumption Standby: 100pW typ. Operating: 325mW(typ.) Power supply voltage 5V±10%

Contextual Info: ELPAQ EMF1M8A 4 d ivisio n of ELMO Sem iconductor Coro. 8Mb CMOS FLASH MEMORY FEATURES • Organized as 1,048,576 x 8 • 90 ns Access Time • Byte Programmable • Eraseable In 1Mb Blocks • Low power consumption • Power supply voltage 5V±10% ■ Program and erase voltage 12V±5%

Contextual Info: S5E D • TDDDSñD OGOQOañ 4Sñ ■ ELPÖ ELPAQ ELPAö EMS512K8A A division o f ELMO Semiconductor Corp. 35 4Mb CMOS STATIC SRAM FEATURES Pin Configuration ■ High density SRAM module Aia c 1 32 □ vcc • Organized as 524,288 x 8 A 16 C 2 31 3 A15 A 14 C

Contextual Info: ELPAQ EMF1M8A A division of ELMO Semiconductor Coro. 8Mb CMOS FLASH MEMORY FEATURES • Organized as 1,048,576 x 8 ■ 90 ns Access Time ■ Byte Programmable ■ Eraseable in 1Mb Blocks * Low power consumption ■ Power supply voltage 5V±10% * Program and erase voltage 12V±5%

Contextual Info: 53E D • TOOOBflD OQQDD44 hTD ■ ELPAQ ELPÛ y - y 6 . _ ¿y EMF1M8A ELPAö A division o f ELMO Semiconductor Corp. 8Mb CMOS FLASH MEMORY FEATURES ■ Organized as 1,048,576 x 8 ■ 90 ns Access Time ■ Byte Programmable ■ Eraseable in 1Mb Blocks ■ Low power consumption

Contextual Info: EIC01MS08 ELMO CMOS STATIC RAM: 128K x 8 DESCRIPTION The ELMO EIC01MS08 is a monolithic 131,072-word x 8-bit high speed CMOS static RAM suitable for use in low power and high speed applications. It comes in several package styles and operates from a single +5V supply.

Elmo Semiconductor

Contextual Info: ELPAQ EMS512K8B 70 - 100ns A division of ELMO Semiconductor Corp. 4Mb CMOS STATIC SRAM FEATURES * High density SRAM module • Organized as 524,288 x 8 Pin Configuration A1S c 1 32 □ vcc A16 2 31 □ A15 3 30 3 A17 WE A6 c c c c c A5 c A14 ■ Access time 70 - 1 00ns

Contextual Info: ” Flash Memory Programming A d/Wa/ort of ELMO Sem/conrfucfor Corp._ PROGRAMMING BASIC PRINCIPLES The EMF1M8 lash EPROM module consists of eight 1Mb (128Kx8 Flash EPROMs with a parallel! data and address buses. The three highest order addresses are decoded through a three-to-eight line decoder to control each individual

Elmo Semiconductor

Abstract: CI 7400 lcc-32 elmo 070d EMC01MS08M02-055D 256KX8 EMC01MS08M02-100D EMC01MS08M03-055C EMC02MS08M02-045D
Contextual Info: ELMO SEMIC ONDUCT OR CORP M3E D • 32*iGSb4 0000025 T M E S C C SRAM SELECTION GUIDE SRAM MODULES PART NUMBER ORG. TECH. SPEEED ns TEMP. MAX. DC CURRENT RANGE c ICC IS81 ISB2 (mA) (mA) (ma) PACKAGE STYLE PINS DIMENSIONS LxWxH (In.) 1 MB DENSITY EMC01MS08M02-055D