BF170 Search Results

Contextual Info: 5 3 1 2 4 Global Connector Technology Ltd. - 2.00mm PITCH ELEVATED PIN HEADER, TRIPLE ROW, THROUGH HOLE, VERTICAL 6 7 8 A A B B C C D D E E Ordering Grid BF170 XXX X XXXX No. of Contacts 06 to 120 F SPECIFICATIONS 规格 CURRENT RATING 电流额定值: 2 AMP

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA T M O S FET Transistor N-Channel ir M M BF170LT1 GATE V •—1 TMOS MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage Vd GS 60 Vdc G ate-Source Voltage — Continuous — Non-repetitive tp < 50 fis

BF170

Abstract: BF200 transistor bf200 datasheet EL2073C EL2073CN EL2073CS
Contextual Info: 200MHz Unity-Gain Stable Operational Amplifier Features General Description • 200MHz gain-bandwidth product • Unity-gain stable • Ultra low video distortion = 0.01%/0.015° @ NTSC/PAL • Conventional voltage-feedback topology • Low offset voltage = 200µV

BF170

Abstract: bf200 datasheet BF200 transistor EL2074 EL2074C EL2074CN EL2074CS EL2074CS-T13 EL2074CS-T7 bf200 pin configuration
Contextual Info: 400MHz GBWP Gain-of-2 Stable Operational Amplifier Features General Description • 400MHz gain-bandwidth product • Gain-of-2 stable • Ultra low video distortion = 0.01%/0.015° @NTSC/PAL • Conventional voltage-feedback topology • Low offset voltage = 200µV

BF170

Abstract: BF200 transistor bf200 datasheet EL2075CN EL2075 EL2075CS
Contextual Info: T T DUC PRO ACE MEN at E T L r LE P e O E t n S R OB rt Ce c D ED MEN al Suppo il.com/ts M O s C ic r E e n t R h O NData r Te c or www.in ct ouSheet L conta -INTE RS I 1- 888 2GHz GBWP Gain-of-10 Stable Operational Amplifier The EL2075 is a precision voltagefeedback amplifier featuring a 2GHz

bf170

Abstract: BF160
Contextual Info: 1 2 3 5 4 6 7 8 Global Connector Technology Ltd. - 2.00mm PITCH ELEVATED SOCKET, TRIPLE ROW, THROUGH HOLE, VERTICAL A B C D E SPECIFICATIONS 规格 CURRENT RATING 电流额定值: 2 AMP INSULATOR RESISTANCE 绝缘电阻值: 1000 MΩ Min. CONTACT RESISTANCE 接触电阻值 : 20mΩ Max.

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BF170

Abstract: bf200 datasheet BF200 transistor CENT LPD M2074 EL2074 EL2074CN EL2074CS EL2074CS-T13 EL2074CS-T7
Contextual Info: UCT ENT ROD TE P EPLACEM ter at E L O OBS NDED R port Cen /tsc MME ical Sup rsil.com ECO eSheet hn nte NO R Data ww.i rT c u ct o RSIL or w a t n o c -INTE 1-888 400MHz GBWP Gain-of-2 Stable Operational Amplifier The EL2074 is a precision voltagefeedback amplifier featuring a 400MHz

Contextual Info: 5 3 1 2 4 Global Connector Technology Ltd. - 2.00mm PITCH SOCKET, TRIPLE ROW, THROUGH HOLE, VERTICAL 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 CURRENT RATING 电流额定值 : 2 AMP INSULATOR RESISTANCE 绝缘电阻值 : 1000 MΩ Min. CONTACT RESISTANCE 接触电阻值 : 20mΩ Max.

BF170

Abstract: bf200 datasheet BF200 transistor EL2075CN EL2075C EL2075CS BF200 operational amplifier 2ghz
Contextual Info: 2GHz GBWP Gain-of-10 Stable Operational Amplifier Features General Description • 2GHz gain-bandwidth product • Gain-of-10 stable • Conventional voltage-feedback topology • Low offset voltage = 200µV • Low bias current = 2µA • Low offset current = 0.1µA

BF170

Abstract: bf200 datasheet BF200 transistor EL2073 EL2073CN EL2073CS
Contextual Info: EL2073 UCT T PROD ACEMEN t E T E a L L P e O E t en r OBS NDED R ort C om/tsc p E p M u ECOM echnical S .intersil.c September 26, 2001 NO R Data w r TSheet or ww ct ou conta -INTERSIL 1-888 200MHz Unity-Gain Stable Operational Amplifier Features The EL2073 is a precision voltagefeedback amplifier featuring a 200MHz

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BF170LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor M M B F170LT1 N -C h an n el GATE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit D rain-Source Voltage V d SS 60 Vdc D rain-G ate Voltage VDGS 60 Vdc Gate-Source Voltage — Continuous — N on-repetitive tp < 50 (is

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BS107 spice

Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
Contextual Info: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT

B5170

Abstract: DIODE WJ SOt23 transistor BS170 MMBF170 A9 SOT-23 BS170 16 sot 23 transistor MOSFET BS170
Contextual Info: ë> N a t io n al Semiconductor" April 1995 BS170 / BF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

SN76477

Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p

BF546

Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
Contextual Info: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)