HFA25TB60
Abstract: 36MT160 26MT120 36MB60A IR hfa06tb120 HFA16PB120 36MB60A MBR2
Contextual Info: 2011-2012:QuarkCatalogTempNew 9/11/12 9:34 AM Page 2011 25 Diodes RoHS Square, 25 Amp Square, 35 Amp Continued Mfr.’s Type @ TC (°C) IF (AV) IRM (mA) VFM @ 25° C (V) VRRM (V) Package EACH Stock No. Mfr.’s Type @ TC (°C) IF (AV) IRM (mA) VFM @ 25°C
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HF50C120ACE
Abstract: hf50c120
Contextual Info: PD - 2.598 Preliminary HF50C120ACE HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)
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HFA16PB120
Abstract: HF40C120ACB
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current
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HF30C120ACB
Abstract: HFA08PB120
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.499 TARGET HF30C120ACB HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current
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HF40C120ACB
Abstract: HFA16PB120
Contextual Info: PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.6V Max.
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HF30C120ACE
Abstract: HFA08PB120
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 2.502 TARGET HF30C120ACE HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current
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HF30C120ACB
Abstract: HFA08PB120
Contextual Info: PD-2.499 TARGET HF30C120ACB HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.8V Max.
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HF30C120ACE
Abstract: HFA08PB120
Contextual Info: PD - 2.502 TARGET HF30C120ACE HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.8V Max.
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HF51C120ACE
Abstract: HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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Contextual Info: Preliminary Data Sheet PD-20502 rev. B 2/04 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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Contextual Info: Preliminary Data Sheet PD-20598 rev. B 11/98 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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HFA32PB120
Abstract: HF50C120ACB
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.496 TARGET HF50C120ACB HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current
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HF51C120ACE
Abstract: HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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20613
Abstract: SHEET METAL tolerance HF20C120ACE HFA06TB120
Contextual Info: Preliminary Data Sheet PD-20613 11/98 HF20C120ACE Hexfred Die in Wafer Form 1200 V Size 20 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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WAFER
Abstract: HF50C120ACE HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20598 rev. B 11/98 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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R8120S3S
Abstract: R8120S3 16A200 r8120p Diode 1200V 8A
Contextual Info: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft
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Contextual Info: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft
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HFA16PB120
Abstract: HF40C120ACE
Contextual Info: Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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R8120P2
Abstract: r8120 R8120S3S AN-7528 ISL9R8120P2 ISL9R8120S3S r8120p
Contextual Info: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft
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HF40C120ACE
Abstract: HFA16PB120
Contextual Info: Preliminary Data Sheet PD-20497A rev. B 2/5/04 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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HF30C120ACE
Abstract: HFA08PB120
Contextual Info: Preliminary Data Sheet PD-20502 rev. B 2/04 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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R8120P2
Abstract: Fast Recovery Diodes Cross Reference ISL9R8120P2
Contextual Info: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft
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isl9r8120p2isl9r8120s3so-220r8120p2+1fast recovery diodes cross reference
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HF30C120ACE
Abstract: HFA08PB120 PD-20502
Contextual Info: Preliminary Data Sheet PD-20502 rev. A 11/98 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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HF40C120ACE
Contextual Info: Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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