HF30C120ACB
Abstract: HFA08PB120
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.499 TARGET HF30C120ACB HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current
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hf30c120acbhfa08pb120 |
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HF30C120ACB
Abstract: HFA08PB120
Contextual Info: PD-2.499 TARGET HF30C120ACB HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.8V Max.
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hf30c120acbhfa08pb120 |
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Contextual Info: International I Q R Rectifi G f _ TARGET PD'2-499 H F 30C 120A C B HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter Description Guaranteed (Min/Max) Test Conditions V fm Forward Voltage
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hf30c120acb250pa100mm |
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HFA16TA120C
Abstract: HF30A060ACD HFA16PB120 IR210 ir485 HF10A060ACD
Contextual Info: ¡Ill usas I n t e r n a t io n a l R e c t if ie r Die Tables and Outlines HEXFRED Die w > M i Part Number Die{2) Part Number Die Size N/A 6 HF06A060ACB Length/Side in.) mm "C x 0" (in.) mm Anode MetaKzation Quantity Tray (0.066x0.066)1.68x1.68 (0.037x0.037) 0.94x0.94
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hf06a060acb066x0037x0hfa04tb60+11hfa08ta60chf10a060acbhf10a060acd090x0062x0hfa08pb60hfa16ta120chf30a060acdhfa16pb120ir210ir485
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HF10A060ACD
Abstract: HFA08TB60 equivalent HFA16TA120C HFA16TA60C equivalent HFA04TB60 equivalent hfa06tb120 HF30A060ACD HF06A060ACB HFA30PA60C
Contextual Info: I n t e r n a t i o n a l R e c t if ie r F w t l II HEXFRED 1 <2) Wafer Part Number (3) Di* Part Number Bond Pad ‘C X O’ Unjth/SIb* (ln.)mm Anod* MetaSzation (topskk) Tray Quantity Equivalent fin is M Product Di* S in DhAXB'Langth/Skb (iajmm 6 (0.066x0.066)1.68x1.68
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hf06a060acb066x0037x0hfa04tb60+14hfa08ta60chfa08pb60hfa08tb60hfa16pa60chfa16ta60chfa15pb60hf10a060acdhfa08tb60 equivalenthfa16ta120chfa16ta60c equivalenthfa04tb60 equivalenthfa06tb120hf30a060acdhfa30pa60c
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SCR gate drive circuit
Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Contextual Info: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1n1183in11901n1183ain1190a+141n1199a1n1206a1n20541n20681n3085-1n3092scr gate drive circuitan 80771in1190a diode20509diode 31dqhfa25tb60sd400nir 31dq 03
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