HF51C120ACE
Abstract: HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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pd-20609hf51c120ace12-mar-07hfa30pb120 |
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HF51C120ACE
Abstract: HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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pd-20609hf51c120ace125mmhfa30pb120 |
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IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1n1183in11901n1183ain1190a+151n1199a1n1206a1n20541n20681n3085-1n3092in1190a diodean 80771hfa30pa60scr gate drive circuita6f diodehfa120fa60hf50a060dt93-1hfa16pb120
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