hf50c120
Contextual Info: International IO R Rectifier PD'2-496 H F 50C 120A C B TARGET HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form D e s c rip tio n P a ra m e te r G u a ra n te e d (M in /M a x ) T e s t C o n d itio n s
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B1198
Contextual Info: Preliminary D a ta sh e e t PD-20598 rev. B 11/98 International IQR Rectifier HF50C120ACE Hexfred Die in W afer Form 1200 V Size 50 5" W afer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) Test Conditions Forw ard Voltage
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pd-20598hf50c120ace125mmhfa30pb120+3635tolerance270tolranceb1198
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Contextual Info: Preliminary Data Sheet PD-20598 rev. B 11/98 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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HFA32PB120
Abstract: HF50C120ACB
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.496 TARGET HF50C120ACB HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current
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Contextual Info: Preliminary Data Sheet PD-20598A rev. C 2/5/04 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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pd-20598ahf50c120ace150mmhfa30pb120 |
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HF50C120ACE
Abstract: hf50c120
Contextual Info: PD - 2.598 Preliminary HF50C120ACE HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)
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WAFER
Abstract: HF50C120ACE HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20598 rev. B 11/98 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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pd-20598hf50c120ace125mmhfa30pb120+1wafer
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HF50C120ACE
Abstract: HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20598A rev. C 2/5/04 HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)
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pd-20598ahf50c120ace12-mar-07hfa30pb120 |
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HFA16TA120C
Abstract: HF30A060ACD HFA16PB120 IR210 ir485 HF10A060ACD
Contextual Info: ¡Ill usas I n t e r n a t io n a l R e c t if ie r Die Tables and Outlines HEXFRED Die w > M i Part Number Die{2) Part Number Die Size N/A 6 HF06A060ACB Length/Side in.) mm "C x 0" (in.) mm Anode MetaKzation Quantity Tray (0.066x0.066)1.68x1.68 (0.037x0.037) 0.94x0.94
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hf06a060acb066x0037x0hfa04tb60+11hfa08ta60chf10a060acbhf10a060acd090x0062x0hfa08pb60hfa16ta120chf30a060acdhfa16pb120ir210ir485
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HF10A060ACD
Abstract: HFA08TB60 equivalent HFA16TA120C HFA16TA60C equivalent HFA04TB60 equivalent hfa06tb120 HF30A060ACD HF06A060ACB HFA30PA60C
Contextual Info: I n t e r n a t i o n a l R e c t if ie r F w t l II HEXFRED 1 <2) Wafer Part Number (3) Di* Part Number Bond Pad ‘C X O’ Unjth/SIb* (ln.)mm Anod* MetaSzation (topskk) Tray Quantity Equivalent fin is M Product Di* S in DhAXB'Langth/Skb (iajmm 6 (0.066x0.066)1.68x1.68
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hf06a060acb066x0037x0hfa04tb60+14hfa08ta60chfa08pb60hfa08tb60hfa16pa60chfa16ta60chfa15pb60hf10a060acdhfa08tb60 equivalenthfa16ta120chfa16ta60c equivalenthfa04tb60 equivalenthfa06tb120hf30a060acdhfa30pa60c
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IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1n1183in11901n1183ain1190a+151n1199a1n1206a1n20541n20681n3085-1n3092in1190a diodean 80771hfa30pa60scr gate drive circuita6f diodehfa120fa60hf50a060dt93-1hfa16pb120
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SCR gate drive circuit
Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Contextual Info: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1n1183in11901n1183ain1190a+141n1199a1n1206a1n20541n20681n3085-1n3092scr gate drive circuitan 80771in1190a diode20509diode 31dqhfa25tb60sd400nir 31dq 03
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HF30A060ACD
Abstract: HF06A060ACB
Contextual Info: International Iö R Rectifier Wafer Part Die Part Number Number HEXFRED Die A' Bond Pad 'B' Anode Length/Side Length/Side Metalization in. mm (in.) mm Tray (top side) Quantity HF30A060ACB HF30A060ACD <0.115x0.155) 2.92x3.94 (0.064x0.104) 1 63x2.64 AI
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