WAFER Search Results

Contextual Info: SB 1660 SCHOTTKY DIE SPECIFICATION General Description: 60 V 16 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage

JS-CH-1132R-XX

Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Voltage Rating: Current Rating: Insulation Resistance: Contact Resistance: Withstanding Voltage: Temperature Range: A B WAFER Poles: Contact Material: Base Material: C Poles 2 3 4 5 6 7 8 9 10 11 12 13 14 15 D E F 9 250V AC/DC

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

INCOMING RAW MATERIAL INSPECTION chart

Abstract: INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL INSPECTION INCOMING RAW MATERIAL INSPECTION method INCOMING RAW MATERIAL flowchart LINEAR TECHNOLOGY mark code INCOMING MATERIAL FLOW PROCESS INCOMING RAW MATERIAL aql incoming inspection mil-std-883 2015 Gold Ball Bond Shear
Contextual Info: Pg. 1 of 3 ATTACHMENT 2. ASSEMBLY FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test Source Accept Test: Quality Contact: Linear Technology BIPOLAR PROCESS TO-92 Linear Technology Carsem Maylasia Linear Technology

NEZ3436-30E

Contextual Info: S-BAND INTERNALLY NEZ3436-30E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) 24±0.2 • HIGH LINEAR GAIN: 10.0 dB

IGBT THEORY AND APPLICATIONS 400V

Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
Contextual Info: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page

HS-1212RH

Abstract: NV SMD TRANSISTOR 5962F9683101VPA 5962F9683101VPC HA5023 HS7-1212RH-Q HS7B-1212RH-Q
Contextual Info: HS-1212RH Data Sheet Radiation Hardened, Dual, High Speed Low Power, Video Closed Loop Buffer The HS-1212RH is a dual closed loop buffer featuring user programmable gain and high speed performance. Manufactured on Intersil’s proprietary complementary bipolar UHF-1 DI bonded wafer process, this device offers

5962F9764101VEA

Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
Contextual Info: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides

INCOMING RAW MATERIAL INSPECTION

Abstract: INCOMING RAW MATERIAL INSPECTION method INCOMING Plate INSPECTION INCOMING RAW MATERIAL INSPECTION form INCOMING RAW MATERIAL flowchart INCOMING RAW MATERIAL LINEAR TECHNOLOGY mark code inspection sampling plan INCOMING RAW MATERIAL INSPECTION chart mil-std-883 2015 Gold Ball Bond Shear
Contextual Info: Pg. 1 of 3 ATTACHMENT 2. ASSEMBLY FLOWCHART INCOMING Vendor: Product: Package: Location of Wafer Fab: Assembly: Final Test: Q.C. Test Source Accept Test: Quality Contact: Linear Technology Corporation Bipolar Process 3 Lead SOT-223 Linear Technology Corp., Milpitas,

Contextual Info: Preliminary Specification 250V, 64 Channel Push-Pull Driver with Adjustable Source/Sink Current Ordering Information Package Options Device Die in waffle pack Bumped die in waffle Pack Die in wafer form HV3225 HV3225X HV3225BX HV3225WX Features General Description

TIC216

Abstract: TIC216D TIC216M TIC216N 15-V TIC216S
Contextual Info: TIC216 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 5 mA Quadrants 1 - 3 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.

4780

Abstract: CDSC706-T05C silver ag wire Bond
Contextual Info: MATERIAL DECLARATION SHEET Material # CDSC706 Series Product Line ESD Protection Date 1/1/2007 RoHS Compliant Yes COMPONENT DETAILS No. Construction element Material group Material weight [g] 1 Lead Frame Lead Frame 0.002570 2 Wafer Silicon 0.001434 3 Gold Bond wire

Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11424-1E 16 Mbit Mobile FCRAMTM MB82D01181E-60L New released • FEATURES • Asynchronous SRAM interface • Byte Control with LB, UB pin Low Power Consumption Power Down Mode Chip/Wafer Business SRAM compatible pinout FBGA

TRANSISTOR R1002

Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing

TICP106D

Abstract: ticp106m TICP106
Contextual Info: TICP106 SERIES SILICON CONTROLLED RECTIFIERS ● 2 A Continuous On-State Current ● 15 A Surge-Current ● Glass Passivated Wafer A ● 400 V to 600 V Off-State Voltage K ● Max IGT of 200 µA ● Package Options LP PACKAGE TOP VIEW G 1 2 3 MDC1AA PACKAGE

TC07AA

Abstract: TIC225 TC07AB TIC225M 15-V TIC225D TIC225N TIC225S
Contextual Info: TIC225 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 5 mA Quadrant 1 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.

1n4148 die chip

Abstract: 1N4150 DIE 1N4148 chip 1n4148 die WN diode CPD41-1N4150-CT DIE CHIP 51 BAS56 CPD41 CPD93V
Contextual Info: PCN # 109 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD41, High Current Switching Diode discrete semiconductors, wafers, and die in chip

TIC236 application note

Abstract: TIC236N apply TIC236 TIC236M 15-V TIC236D TIC236N TIC236S
Contextual Info: TIC236 SERIES SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 50 mA Quadrants 1 - 3 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.

CPD64

Abstract: 1N3595 1n457a equivalent
Contextual Info: PCN # 110 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD64, Low Leakage Diode discrete semiconductors, wafers, and die in chip form. Extent of Change:

tic126

Abstract: TIC126D TIC126M TIC126D equivalent TIC126N "Silicon Controlled Rectifiers" pdf tic126n TIC126S DC12-10
Contextual Info: TIC126 SERIES SILICON CONTROLLED RECTIFIERS ● 12 A Continuous On-State Current ● 100 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage K 1 ● Max IGT of 20 mA A 2 G 3 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base.

PHHI

Abstract: phui PGYI TPS79301 TPS79318 TPS79325 TPS79328 TPS793285 TPS79330 TPS79333
Contextual Info: DBV 5 DBV 6 TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475 YEQ, YZQ www.ti.com SLVS348I – JULY 2001 – REVISED MAY 2005 ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar WAFER CHIP SCALE AND SOT23

TLV5608

Abstract: TLV5608IDW TLV5608IYE TLV5608IYER TLV5610 TLV5610IDW TLV5610IYE TMS320
Contextual Info: TLV5610IYE TLV5608IYE www.ti.com SLAS393 − OCTOBER 2003 2.7 V TO 5.5 V, 12Ć AND 10ĆBIT OCTAL DAC IN WAFER CHIP SCALE PACKAGE FEATURES D Eight Voltage Output DACs in One Package − TLV5610IYE . . . 12-Bit − TLV5608IYE . . . 10-Bit D Programmable Settling Time vs Power

EPC2001

Abstract: EPC Gan transistor FX-93 FET MARKING QG
Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

PGVI

Abstract: phui pgxi PHHI PGYI PHJI TPS7933 TPS79318 TPS79325 TPS793285
Contextual Info: DBV 6 DBV 5 TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475 YEQ www.ti.com SLVS348H – JULY 2001 – REVISED OCTOBER 2004 ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar WAFER CHIP SCALE AND SOT23