IRGD Search Results

C451

Contextual Info: International iqrIRectifier Provisional Data Sheet PD-9.1174 IRGDDN300M06 IRGRDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"

IRGDDN400M06

Abstract: 400V 400A mosfet
Contextual Info: International iël] Rectifier Provisional Data Sheet PD -9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK IRGDD. Low conduction loss IGBT IRGRD. VCE = 600V A • Rugged Design • Sim ple gate-drive •Sw itching-Loss Rating includes all “tail"

IRGDDN400M06

Abstract: c454 INTAPAK package mosfet 400a
Contextual Info: International ^Rectifier Provisional Data Sheet PD-9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 400A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses

mosfet ir 840

Abstract: irgddn400k06 OF IGBT 300A 500V 400A mosfet
Contextual Info: International g ! Rectifier Provisional Data Sheet PD-9.1196 IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE = 600V lc = 400A • Rugged Design .Simple gate-drive •Switching-Loss Rating includes all "tail" losses

IRGDDN600K06

Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
Contextual Info: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

OF IGBT 300A 500V

Abstract: D-18 IRGDDN300K06 IRGRDN300K06 igbt 600V 300A C1012
Contextual Info: International [ï §r]Rectifier Provisional D ata S h eet P D -9 .1 1 9 5 IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

IRGDDN400K06

Abstract: power diode 400A VQE 11 400A mosfet vqe 13
Contextual Info: Provisional Data Sheet PD-9.1196 bitemational ïôHRectifier IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE= 600V lc = 400A •Rugged Design •Sim ple gate-drive .Switching-Loss Rating includes all ‘tail" losses

IRGDDN400M12

Abstract: BVOE 18 mosfet 400a 400A mosfet C-561
Contextual Info: Provisional Data Sheet PD-9.1204 In ternational ï « r ]R e c tifie r IRGDDN400M12 IRGRDN400M12 "SINGLE SWITCH“ IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 400A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"

C559

Abstract: IRGRDN300M12 IRGDDN300M12
Contextual Info: IRGDDN300M12 IRGRDN300M12 — hecnner "SINGLE SW ITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V CE= 1200V lc = 300A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce ON < 2.7V tsc> 10ms

IRGDDN600K06

Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Contextual Info: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses

Contextual Info: International l i i Rectifier PD-9.1171 IRGDDN300M12 IRGRDN300M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 1200V lc = 300A • Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail" losses .Short circuit rated

Contextual Info: Provisional Datasheet PD-9.1195 bitemational iôhRectifier IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc =300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses

IRGRDN400M12

Abstract: LF400A
Contextual Info: Provisional Data Sheet PD-9.1204 IRGDDN400M12 ir g r d n 4Q0M12 goRjHecnner "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 400A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all “tail" losses •Short circuit rated

2903D

Abstract: irgddn200m12
Contextual Info: International ^R ectifier PD -9.1170 IRGDDN200M12 IRGRDN200M12 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK • Rugged Design •S im p le gate-drive .Sw itching-Loss Rating includes all "tail" losses •S h o rt circuit rated Low conduction loss IGBT V Œ = lc =

max4073

Abstract: ADM4073 ADM4073TWRJZ-REEL7 adm4073fwrjz-reel71 M2D Package
Contextual Info: Low Cost, Voltage Output, High-Side, Current-Sense Amplifier ADM4073 FUNCTIONAL BLOCK DIAGRAM ILOAD RSENSE 2V TO 28V 0.1µF IRG1 VCC RG1 RG2 AV ADM4073 VOUT CURRENT MIRROR RGD = 12kΩ IRGD GND Figure 1. APPLICATIONS Cell phones, PDAs Notebook computers Portable/battery-powered systems

83TL-7E07A

Abstract: 42644LA-80L
Contextual Info: SEC jliPD42644 1,048,576 X 4-Bit Silicon File NEC Electronics Inc. Description Pin Configurations The £/PD42644 is a fast-page, low-power dynamic RAM organized as 1,048,576 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

MOTOROLA SEMICONDUCTOR AN1542

Abstract: IGD 507 an MOTOROLA smd SCR AN1542 SMPS INRUSH CURRENT LIMITER ntc thermistors for inrush current limiting smps using SCR& mosfet AC INRUSH CURRENT LIMITER DSA0035015 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must

Contextual Info: 7 C^ E 3 7 0 0 5 6 H 0 3 H • 3 - f I SGS-THOMSON BD243/A/B/C D^DD Dl^(Q Il[L[iCTI^ IRgDOS_ BD244/A/B/C S G S-THOMSON 3QE » POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD243, BD243A, BD243B and BD243C are si­ licon epitaxial-base NPN power transistors in Jedec

Contextual Info: 19-1781; Rev 0; 7/00 Single/Dual/Quad High-Side Current-Sense Amplifiers with Internal Gain Features ♦ Low-Cost Single/Dual/Quad High-Side CurrentSense Amplifiers ♦ ±0.5% Typical Full-Scale Accuracy ♦ +3V to +28V Supply Operation ♦ Adjustable Current-Sense Capability with External

aaBO

Abstract: MAX4173 MAX4173F MAX4173H MAX4173T MAX4173TESA MAX4173TEUT-T MAX4173HESA
Contextual Info: 19-1434; Rev 3; 12/04 Low-Cost, SOT23, Voltage-Output, High-Side Current-Sense Amplifier The MAX4173 low-cost, precision, high-side currentsense amplifier is available in a tiny SOT23-6 package. It features a voltage output that eliminates the need for gain-setting resistors and it is ideal for today’s notebook

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IGD 507 an

Abstract: MOTOROLA SEMICONDUCTOR AN1542 pmos Vt AN1542 Nippon capacitors diode gfm
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1542/D AN1542 Active Inrush Current Limiting Using MOSFETs Prepared by: C. S. Mitter Motorola Inc. Input filter design has been an integral part of power supply designs. With the advent of input filters, the designer must

ic 14 pin irs

Abstract: MAX437 MAX4376 MAX4376FAUK-T MAX4376HAUK-T MAX4376TAUK
Contextual Info: 19-1781; Rev 2; 10/00 Single/Dual/Quad High-Side Current-Sense Amplifiers with Internal Gain Features ♦ Low-Cost Single/Dual/Quad High-Side CurrentSense Amplifiers ♦ ±0.5% Typical Full-Scale Accuracy ♦ +3V to +28V Supply Operation ♦ Adjustable Current-Sense Capability with External