OF IGBT 300A 500V
Abstract: D-18 IRGDDN300K06 IRGRDN300K06 igbt 600V 300A C1012
Contextual Info: International [ï §r]Rectifier Provisional D ata S h eet P D -9 .1 1 9 5 IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"
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irgddn300k06irgrdn300k06c-1012fiss452+4of igbt 300a 500vd-18igbt 600v 300ac1012
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Contextual Info: Provisional Datasheet PD-9.1195 bitemational iôhRectifier IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc =300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses
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irgddn300k06irgrdn300k06c-1012 |
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IRGKI200F06
Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U
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irgb420uirgp420uirgb430uirgp430u+16irgbc20kirgpc20kirgbc20k-sirgbc20mirgbc20m-sirgpc20mirgki200f06irgnin150m06irgki120f06irgddn600m06irgki115u06irgbc20fd2irgtin025m12irgti140u06irgpc50uirgki165f06
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IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)
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ot-23irlml2402irlml2803irlml5103+9irlml6302irgki165f06irgddn600m06irgddn600k06irf7311irgnin075irfk6h054irf7601irli2203n
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IRGKI200F06
Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications
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o-220abirg4bc40sirgbc20sirgbc30s+15irgbc40so-247acirg4pc40sirgpc30sirgpc40s10-30khzirgki200f06irgnin150m06irgti165f06irgbc20fd2irgki115u06irgti140u06irgph40fd2irg4bc30udirgni115u06
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IRGPH40KD2
Abstract: IRGPH20K irgph30k
Contextual Info: HIRectifier IGBTs International UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency— Optim ized for Pow er Conversion Part Number V CES Collector to Emitter Voltage M a x V CE(on) Collector to Emitter Saturation Voltage
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irgbc20kirgbc30kirgbc40kirgpc20k+9irgpc30kirgpc40kirgpc50ko-220abirgbc20kdirgnin050k06irgph40kd2irgph20kirgph30k
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IRGPH40KD2
Abstract: IRGPC30KD2
Contextual Info: I n t e r n a t io n a l R e c t if ie r IGBTs I Insulated Gate Bipolar Transistors VCES Colador to EmitlarVoltaga Volt. Pm ULTRA-FAST M»x VcEfon) Colador to EmitterVohag* (Vota) ICContinuom Colador Current Tc*25*C Tc=KKCC (Ampt) (Ampi) Pq Mu Dissipation
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irgbc20kirgbc30kirgbc40kirgbc20k-s+8irgbc40k-sirgpc30kirgpc40kirgpc50kirgpc60k30khzirgph40kd2irgpc30kd2
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IRGDDN600M06
Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
Contextual Info: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current
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irgbf20firgpf20firgb420uirgp420u+13irgbc20krgpc20kirgbc20mirgpc20mirgbc20uirgpc20uirgddn600m06irgph20kirgpc20firgpf30firgpc50md2gbc20firgpc50u
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