IRFZ44 MOSFET Search Results

BU271

Abstract: IRF540 24334 FSN0920
Contextual Info: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A

SSP60N06

Abstract: irf630 irf640 SSP50N06 ssp15n06
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520

irfz44

Abstract: IRFz44 n-channel MOSFET IRFZ44 mosfet IRFZ44 MOSFETs IRFZ44 mosfet operation MOSFET IRFZ44
Contextual Info: N-CHANNEL POWER MOSFETS IRFZ44/45 FEATURES • • • • • • • Lower R ds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRFZ44

Abstract: IRFZ44R
Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

IRFZ44

Abstract: IRFZ44R
Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

IRFZ44 data

Abstract: irfz44 gate drive for mosfet irfz44
Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements

irfz44

Contextual Info: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s i o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input cap acitance Extended safe operating area Improved high tem perature reliability

gate drive for mosfet irfz44

Abstract: IRFZ44 data IRFZ44 mosfet switching circuit
Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements

SEC irfz44

Abstract: MOSFET IRFZ44 IRFz44 n-channel MOSFET IRFZ44 data
Contextual Info: IRFZ44 Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 2 4 Q 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: N-CHANNEL POWER MOSFETS IRFZ44/40 FEATURES • Lower R ds<on • Im proved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability

Contextual Info: , One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 IRFZ44 Advanced Power MOSFET FEATURES » » » » Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge

IRFZ44 data

Abstract: IRFZ44 MOSFETs IRFZ44 IRFZ44 mosfet switching circuit voltage regulator mar 920 MOSFET IRFZ44
Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements

Contextual Info: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description

irfz44

Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements

IRFZ44

Abstract: irfz44rpbf
Contextual Info: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description

MOSFET IRFZ44

Abstract: IRFZ44 mosfet switching circuit IRFZ44 IRFZ44 mosfet n channel a type irfz44 mosfet POWER MOSFET N-Channel 230V IRFz44 n-channel MOSFET
Contextual Info: IRFZ44 A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 2 4 Q , 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

gate drive for mosfet irfz44

Abstract: IRFZ44 IRFZ44 equivalent IRFZ44 DATASHEET IRFZ44 mosfet IRFZ44 data IRFZ44 mosfet switching circuit application irfz44 IRFZ44PBF IRFZ44 parallel
Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements Qgd (nC) Configuration

irfz44

Abstract: gate drive for mosfet irfz44 IRFZ44 mosfet switching circuit IRFZ44 data IRFZ44 mosfet
Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements

IRFZ44

Contextual Info: IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling 25 • Simple Drive Requirements

IRFZ44RPBF

Abstract: IRFZ44
Contextual Info: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure

Contextual Info: IRFZ44 A d van ced Power MOSFET FEATURES B V DSS - 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 2 4 Î2 50 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ 175°C Operating Temperature