IRFPE40 Search Results

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

Contextual Info: PD - 94890 IRFPE40PbF • Lead-Free 12/15/03 Document Number: 91247 www.vishay.com 1 IRFPE40PbF Document Number: 91247 www.vishay.com 2 IRFPE40PbF Document Number: 91247 www.vishay.com 3 IRFPE40PbF Document Number: 91247 www.vishay.com 4 IRFPE40PbF Document Number: 91247

IRFPE40 equivalent

Abstract: IRFPE40 IRFPE450
Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Available Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

Contextual Info: IRFPE40 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)5.4 I(DM) Max. (A) Pulsed I(D)3.4 @Temp (øC)100# IDM Max (@25øC Amb)22 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

IRFPE40

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

IRFPE40

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

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Abstract: IRFPE30
Contextual Info: PD - 94890 IRFPE40PbF • Lead-Free www.irf.com 1 12/15/03 IRFPE40PbF 2 www.irf.com IRFPE40PbF www.irf.com 3 IRFPE40PbF 4 www.irf.com IRFPE40PbF www.irf.com 5 IRFPE40PbF 6 www.irf.com IRFPE40PbF TO-247AC Package Outline Dimensions are shown in millimeters inches

035H

Abstract: IRFPE30
Contextual Info: PD - 94890 IRFPE40PbF • Lead-Free www.irf.com 1 12/15/03 IRFPE40PbF 2 www.irf.com IRFPE40PbF www.irf.com 3 IRFPE40PbF 4 www.irf.com IRFPE40PbF www.irf.com 5 IRFPE40PbF 6 www.irf.com IRFPE40PbF TO-247AC Package Outline Dimensions are shown in millimeters inches

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

1RFPE40

Abstract: IRFPE40 NC1636 IR rectifier diode 100A 800V 54A-V
Contextual Info: |^ t ¡ 0 f " f lc l[ t ÍO r i3 l HI 4Ô554S2 D01SSR2 DQ2 M I N R K l Rectifier IRFPE40 HEXFET® Power M O S F E T • • • • • • PD-9.578B INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

marking s15 diode

Abstract: s15 diode
Contextual Info: IRFPE40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive avalanche rated 2.0 Qg (Max.) (nC) 130 • Isolated central mounting hole Qgs (nC) 17 • Fast switching

035H

Abstract: IRFPE30
Contextual Info: PD - 94890 IRFPE40PbF • Lead-Free 12/15/03 Document Number: 91247 www.vishay.com 1 IRFPE40PbF Document Number: 91247 www.vishay.com 2 IRFPE40PbF Document Number: 91247 www.vishay.com 3 IRFPE40PbF Document Number: 91247 www.vishay.com 4 IRFPE40PbF Document Number: 91247

035H

Abstract: IRFPE30
Contextual Info: PD - 94890 IRFPE40PbF • Lead-Free 1 IRFPE40PbF 2 IRFPE40PbF TO-247AC Package Outline Dimensions are shown in millimeters inches -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 2.50 (.089) 1.50 (.059) 4 5.50 (.217) 20.30 (.800)

IRFPE40

Contextual Info: PD-9.578B International k?r Rectifier IRFPE40 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 800V ^ D S o n =

IRFPE40

Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Available Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

Contextual Info: STR-S6411 AND STR-S6411F OFF-LINE SWITCHING REGULATORS WITH POWER MOSFET OUTPUT - SOURCE{ 2 } GATE — LATCH 3 These devices are specifically designed to meet the requirements for increased integration and reliability in off-line flyback (STR-S6411) and forward (STR-S6411F) converters operating in a fixed-frequency

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)