IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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irf 544 n mosfetspice 2 computer models for hexfets4af2npp irtransistor d586+6induction cooker fault finding circuit diagramstransistor mos fet d482electronics digesttransistor d357 equivalentd515 transistor1rf511
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1RF9640
Abstract: IRFP120 IRFP123 IRFP143 IRFA1Z0 IRFP220 IRFP230 IRFP142 TO-3P IRFP121
Contextual Info: - 298 - f m % *± € i m ± £ f é T a - 2 5 ^ ft V Vd s Vg s or Vdg Id Pd ♦ /CH (V) (A) I g ss Vg s th ) I dss * /CH (nA) Vg s (V) ( ma) Vd s (V) min max (V) (V) % Id (mA) (T a = 2 5 ^ ) (ft RD s(on) Vd s= Vg s Io (o n ) C is s g fs Coss C rss 5* B
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ta-251rf9632o-2201rf9633+12t0-2201rf96401rf9641irfp120irfp123irfp143irfa1z0irfp220irfp230irfp142to-3pirfp121
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1rfp360
Abstract: IRFP143 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP141 IRFP151 IRFP153 IRFP241
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V) fë 1 (Ta=25°C) Id Pd * /CH * /CH (A) (W) Ig ss (nA) V g s th) Id ss Vg s (V) min max (V) (V) a ) (V) (nA) fè FD s ( o n ) Vd s = Vg s Id Vd s (m ft % g fs Io(on) Ciss Coss Crss * B m % Vg s =0 (max)
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o-247acirfp141irfp14t0-247ac+13irfpi41irfp142irfp143irfp150irfp1521rfp3601rfp254irfp240irfa1z0irfp230irfp151irfp153irfp241
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SSH60N06
Abstract: IRFP141 IRFP142 IRFP143 Irfp250 irfp254 IRFP230 IRFP242 IRFP130 IRFP333 SSH40N15A
Contextual Info: POWER MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL BVdss V ID(onXA) RDS(onXG) Part Number 60.00 60.00 60.00 0.03 0.025 SSH60N06 SSH60N06A 80.00 12.00 14.00 25.00 28.00 34.00 40.00 0.23 0.16 0.10 0.077 0.080 0.055 IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151
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ssh60n06ssh60n06airfp133irfp131+12irfp143irfp141irfp153irfp151irfp132irfp130irfp142irfp250 irfp254irfp230irfp242irfp333ssh40n15a
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1RFD110
Abstract: 1RF840 IRFA1Z0 IRFP120 IRFP230 1RF740 1RF9641 1RF640 IRFP150 IRF641
Contextual Info: - 275 f m ± t £ tt £ Vd s or Ta=25<C Vg s • f Vd g h (V) (V) ee. 1GSS Pd Id * /CH * /CH (A) m V g s th) 1DSS Vg s (V) (HA) Vd s (V) (V) t± (Ta=25°C) Id (mA) fv) urss Coss Ciss Vd s = Vg s max (nA) ft ii l ft & m % V g s =0 (max) *typ (0) *typ (A)
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taz25cc1rf640o-220abirf641+121rf642irfpi41irfp142irfp1431rfd1101rf840irfa1z0irfp120irfp2301rf7401rf9641irfp150
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IRF630
Abstract: IRFP230 for IRF630 F632 IRFP231 IRF630 mosfet IRF633 ade 633 IRF632 IRFP233
Contextual Info: IRF630/631Z632/633 IR FP230/231/232/233 N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds <on • • • • • Improved inductive ruggedness Fast switching times Rugged polysilfcon gate cell structure Lower input capacitance Extended safe operating area
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irf630/631z632/633fp230/231/232/233o-220irf630/irfp230+16irf631/irfp231irf632/irfp232irf633/irfp233irf630/631/632/633irfp230/231/232/233irf630irfp230for irf630f632irfp231irf630 mosfetirf633ade 633irf632irfp233
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IRF740 "direct replacement"
Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace
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irf510irf511irf512irf513+16irf520irf521irf522irf523irf610irf611irf740 "direct replacementirf9640 replacement guideirf9540 replacementirf640 irf5102sk350 hitachiirf9613rca9213abuz11 cross referencesgsp467fu120
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IRFP231
Contextual Info: SAMSUNG ELECTRONICS INC b4E » • 7^1=4142 G0121ÛS ST1 ■ SM6 K IRF630/631/632/633 IRFP230/231Z232/233 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s ON Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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g0121irf630/631/632/633irfp230/231z232/233o-220+4/irfp231irfp230/231/232/233ib414eirfp231
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