IRFM Search Results

ABE 027

Abstract: ely transformers IRFM460 IRFM460D IRFM460U N431 BBV 32 transistors
Contextual Info: Data Sheet No. PD-9.727A INTERNATIONAL RECTIFIER IQ R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM46Q N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

2N7224 JANTXV

Abstract: 3000CL 2N7224 IRFM150
Contextual Info: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

I298

Abstract: I-293 2N7218 FM140 IRFM140
Contextual Info: Data Sheet No. PD-9.486C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR N-CHANNEL IRFM14Q 2IM7218 JANTXSN7S18 JANTXVSN7S18 [REF: MIL-S-19500/SS6] 100 Volt, 0.077 Ohm HEXFET Product Summary The HEXFET technology ¡s the key to International

DIODE S3V 70

Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

TRANSISTOR BC 545 smd

Abstract: IRFN350 irfn44 IRFMG50 IRFN044 IRFN9040
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER llORI REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part Num ber BV q s s Rectifier’s advanced line of power M O S F E T transistors.

T3D DIODE

Abstract: 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 65 diode T3D 53 diode t3d diode type T3D 83 DIODE
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM450 SN72S8 JANTX2N7228 JANTXV2N7228 ;n N-CHANNEL [REF: MIL-S-135OO/502] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

spice models

Abstract: IRFM340 JANTX2N7221 JANTXV2N7221
Contextual Info: PD - 90490D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International

2N7228 JANTX mosfet

Abstract: 2N7228 JANTX IRFM450 IOR 235 IOR MOSFET 2N7228 JANTX mosfet data sheet 2N7228 JANTXV2N7228 I-362 I-361
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER X & R REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR IRFM45Q S N 7 C E S N-CHANNEL JANTX2N722B JANTXV2N7228 REF: MIL-S-19500/59S] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET technology is the key to International

IRFMA450

Contextual Info: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

irfm120

Contextual Info: IRFM120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

710a

Abstract: IRFMG40 IRFMG40D IRFMG40U
Contextual Info: Data Sheet No. PD-9.710A INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG4Q N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

2N7224 JANTX

Abstract: 2N7224 JANTXV2N7224 IRFM150 JANTX2N7224
Contextual Info: Data Sheet No. PD-9.487C IOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR Zi N-CHANNEL IRFM150 SN7S84 JANTXSN7SS4 JAIMTXVSN7SS4 [ R E F : M I L - S - 1 9 S O O / S 9 2 ) Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Î2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V

Contextual Info: SHD224502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4156, Rev. – HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .07 Ohm, 30A MOSFET • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM150 MAXIMUM RATINGS

IRFM140

Abstract: SHD225402
Contextual Info: SENSITRON SEMICONDUCTOR SHD225402 TECHNICAL DATA DATA SHEET 746, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.077 Ohm, 28A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM140 Series œ Add Suffix ‘C’ to the Part Number for Ceramic Seals

IRFM360

Abstract: SHD225615
Contextual Info: SENSITRON SEMICONDUCTOR SHD225615 TECHNICAL DATA DATA SHEET 4167, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, .20 Ohm, 23A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Similar to IRFM360 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: ^E.mi-dondactoi {Piodueti, -Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFM250 POWER MOSFET THRU-HOLE (TO-254AA) Features: Simple Drive Requirements Ease of Paralleling Hermetically Sealed

mosfets

Abstract: IRFM250 SHD218503B
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 200 30 19 200 0.85 @ 19 0.6 IRFM250

transistor 415

Abstract: mosfets 2N7228 IRFM450
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 500 12 8 150 0.415 @ 8 0.83 IRFM450

IRFM350

Contextual Info: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

IRFM5210

Contextual Info: IRFM5210 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139)

Contextual Info: IRFM MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 1 3 .8 4 (.5 4 5 ) 1 .2 7 (.0 5 0 ) 1 .0 2 (.0 4 0 ) 1 3 .5 9 (.5 3 5 ) 6 .6 0 (.2 6 0 ) 6 .3 2 (.2 4 9 ) 6 .9 1 (.2 7 2 ) 6 .8 1 (.2 6 8 ) 3 .7 8 (.1 4 9 ) 3 .5 3 (.1 3 9 ) 2 0 .3 2 (.8 0 0 )

IRFM7250

Abstract: 2E12 3E12 SFFD250 SFFR250 frf250
Contextual Info: san—= M SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 FEATURES: • ■ ■ Hermetically Sealed, Surface Mount Package TX, TXV and S Level Replaces: IRFM 7250/8450, FRF250 R/H ■

IRFM224B

Contextual Info: IRFM224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching