IRF840 N Search Results

Application of irf840

Abstract: irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334
Contextual Info: IRF840 Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRF840 NOTE: PACKAGE TO-220AB 2312.3 Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRF840

Abstract: Application of irf840 MOSFET IRF840 datasheet irf840 mosfet transistor irf840 IRF8401 SCHEMATIC irf840
Contextual Info: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRF840

Abstract: datasheet irf840 mosfet st irf840 Application of irf840
Contextual Info: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

power MOSFET IRF840

Abstract: IRF840
Contextual Info: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

TA17425

Contextual Info: IRF840 Semiconductor Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8 A ,5 0 0 V Ordering Information IRF840 NOTE: TO-220AB • r DS ON = 0 .8 5 0 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRF840

Abstract: SCHEMATIC irf840 IRF841 st irf840 IRF840FI irf 840 TRANSISTORS 132 GD IRF841FI IRF840F 12UC
Contextual Info: IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS on ID IRF840 IRF840FI TYPE 500 V 500 V < 0.85 Ω < 0.85 Ω 8A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 Ω < 0.85 Ω 8A 4.5 A • ■ ■ ■ TYPICAL RDS(on) = 0.74 Ω

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF840 MOSFET N-Channel TO-220 FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 1. G 2. D

Application of irf840

Abstract: transistor irf840 datasheet irf840 mosfet irf840 power supply IRF840
Contextual Info: DC COMPONENTS CO., LTD. IRF840 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 0.8 Ohm ID = 8.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

Application of irf840

Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
Contextual Info: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN

B44 transistor

Abstract: fet IRF840 TRANSISTOR mosfet IRF840 mosfet b44
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TMOS Power FET is designed fo r high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Application of irf840

Abstract: irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840 SiHF840-E3 Switching Application of irf840
Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

IRF840

Abstract: irf840 power supply IRF842 IRF841 IRF843 Application of irf840 irf84 55TT mosfet 3205 IRF342
Contextual Info: Standard Power MOSFETs - IRF840, IRF841, IRF842, IRF843 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL ENHA N C EM EN T MODE 7 A and 8 A, 450 V - 500 V

TRANSISTOR mosfet IRF840

Abstract: IRF840 application note Switching Application of irf840
Contextual Info: IRF840 Data Sheet Title F84 bt A, 0V, 50 m, 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

IRF840

Abstract: Application of irf840 datasheet irf840 mosfet equivalent irf840 IRF840 MOSFET irf840 power supply high voltage pulse with irf840 transistor irf840 MOSFET IRF840 single HIGH SPEED POWER MOSFET
Contextual Info: IRF840 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Application of irf840

Abstract: IRF840PBF SiHF840 IRF840 SiHF840-E3 irf840 vishay
Contextual Info: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: , Lf na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Mosfet Transistor IRF840 0(2) FEATURES Drain Current -ID=8.0A@ TC=25°C Drain Source Voltage: VDSs= 500V(Min) Static Drain-Source On-Resistance

Contextual Info: IRF840 Advanced Power MOSFET FEATURES - 500 V ^DS on = 0.85Q B ^D S S > a ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

MTP6N60E equivalent

Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Contextual Info: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S

TRANSISTOR mosfet IRF840

Abstract: transistor irf840 IRF840 n-channel mosfet Application of irf840 mosfet irf840 datasheet irf840 mosfet mosfet nA idss IRF840 equivalent irf840 IRF840 and its equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF840 •FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Voltage: VDSS= 500V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·DESCRITION ·Designed for high voltage, high speed switching power applications such as switching regulators, converters, solenoid and