30G6P41
Abstract: 25D4B42 30B2Z11 25D4B41 25J4B42 30BG2C11 30BG2C15 30BG2Z11 30BL2C11 30CG2C15
Contextual Info: - 110 - m & * 25B4B41 25B4B42 * 25D4B41 25D4B42 * 25G4B41 25G4B42 * 25J4B41 25J4B42 * 30B2C11 * 30B2Z11 * 30BG2C11 * 30BG2C15 * 30BG2Z11 * 30BL2C11 * 30CG2C15 * 30CL2C11 * 30CS0SF * 30CS04F * 30D2C11 * 30D2Z11 * 30DG2C11 * 30DG2C15 * 30DG2Z11 * 30DL2C11 * 30FfJ2C11
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25b4b4125b4b4225d4b412sd4b42+1425g4b4125g4b4225j4b4125j4b4230j2z1130j6p4130g6p4125d4b4230b2z1130bg2c1130bg2c1530bg2z1130bl2c1130cg2c15
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25j4b41
Abstract: fht 100 30L6P41 25D4B42 30B2Z11 30GWJ2C11 377A 25D4B41 25J4B42 30BG2C11
Contextual Info: - 110 - m M & * 25B4B41 25B4B42 * 25D4B41 25D4B42 * 25G4B41 25G4B42 * 25J4B41 25J4B42 * 30B2C11 * 30B2Z11 * 30BG2C11 * 30BG2C15 * 30BG2Z11 * 30BL2C11 * 30CG2C15 * 30CL2C11 * 30CS0SF * 30CS04F * 30D2C11 * 30D2Z11 * 30DG2C11 * 30DG2C15 * 30DG2Z11 * 30DL2C11
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25b4b4125b4b4225d4b412sd4b42+1325g4b4125g4b4225j4b4125j4b4230gwj2c4230j2c11fht 10030l6p4125d4b4230b2z1130gwj2c11377a30bg2c11
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25j4b41
Abstract: 25J4B42 30L6P41 30J6P41 25D4B41 30G6P41 30L6P42 25G4B42 25G4B41 25B4B41
Contextual Info: - 110 - m * 25B4B41 & 25B4B42 * 25D4B41 25D4B42 * 25G4B41 25G4B42 * 25J4B41 25J4B42 * 30B2C11 * 30B2Z11 * 30BG2C11 * 30BG2C15 * 30BG2Z11 * 30BL2C11 * 30CG2C15 * 30CL2C11 * 30CS0SF * 30CS04F * 30D2C11 * 30D2Z11 * 30DG2C11 * 30DG2C15 * 30DG2Z11 * 30DL2C11 * 30FfJ2C11
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25b4b4125b4b4225d4b412sd4b42+1025g4b4125g4b4225j4b4125j4b4230gwj2c4230j2c1130l6p4130j6p4130g6p4130l6p42
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25j4b41
Abstract: 25D4B41 25G4B41 25J4B42 25D4B42 30B2Z11 30G6P44 30BG2C11 30BG2C15 30BG2Z11
Contextual Info: - 110 - m M & * 25B4B41 25B4B42 * 25D4B41 25D4B42 * 25G4B41 25G4B42 * 25J4B41 25J4B42 * 30B2C11 * 30B2Z11 * 30BG2C11 * 30BG2C15 * 30BG2Z11 * 30BL2C11 * 30CG2C15 * 30CL2C11 * 30CS0SF * 30CS04F * 30D2C11 * 30D2Z11 * 30DG2C11 * 30DG2C15 * 30DG2Z11 * 30DL2C11
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30g6p41
Abstract: 25D4B42 25J4b41 30B2Z11 25D4B41 25J4B42 30BG2C11 30BG2C15 30BG2Z11 30BL2C11
Contextual Info: - 110 - m M & * 25B4B41 25B4B42 * 25D4B41 25D4B42 * 25G4B41 25G4B42 * 25J4B41 25J4B42 * 30B2C11 * 30B2Z11 * 30BG2C11 * 30BG2C15 * 30BG2Z11 * 30BL2C11 * 30CG2C15 * 30CL2C11 * 30CS0SF * 30CS04F * 30D2C11 * 30D2Z11 * 30DG2C11 * 30DG2C15 * 30DG2Z11 * 30DL2C11
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30L6P41
Abstract: 30L6P42 25J4B41 30CG2C15 25D4B42 25J4B42 707A 25G4B41 30B2Z11 25D4B41
Contextual Info: - 110 - m & * 25B4B41 25B4B42 * 25D4B41 25D4B42 * 25G4B41 25G4B42 * 25J4B41 25J4B42 * 30B2C11 * 30B2Z11 * 30BG2C11 * 30BG2C15 * 30BG2Z11 * 30BL2C11 * 30CG2C15 * 30CL2C11 * 30CS0SF * 30CS04F * 30D2C11 * 30D2Z11 * 30DG2C11 * 30DG2C15 * 30DG2Z11 * 30DL2C11 * 30FfJ2C11
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25D4B42
Abstract: 30B2Z11 25D4B41 25J4B42 30BG2C11 30BG2C15 30BG2Z11 30BL2C11 30CG2C15 30CL2C11
Contextual Info: - 110 - m * 25B4B41 & 25B4B42 * 25D4B41 25D4B42 * 25G4B41 25G4B42 * 25J4B41 25J4B42 * 30B2C11 * 30B2Z11 * 30BG2C11 * 30BG2C15 * 30BG2Z11 * 30BL2C11 * 30CG2C15 * 30CL2C11 * 30CS0SF * 30CS04F * 30D2C11 * 30D2Z11 * 30DG2C11 * 30DG2C15 * 30DG2Z11 * 30DL2C11 * 30FfJ2C11
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30L6P41
Abstract: 25D4B41 25D4B42 25J4b41 30B2Z11 25J4B42 30BG2C11 30BG2C15 30BG2Z11 30BL2C11
Contextual Info: - 110 - M m & * 25B4B41 25B4B42 * 25D4B41 25D4B42 * 25G4B41 25G4B42 * 25J4B41 25J4B42 * 30B2C11 * 30B2Z11 * 30BG2C11 * 30BG2C15 * 30BG2Z11 * 30BL2C11 * 30CG2C15 * 30CL2C11 * 30CS0SF * 30CS04F * 30D2C11 * 30D2Z11 * 30DG2C11 * 30DG2C15 * 30DG2Z11 * 30DL2C11
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Solitron J775-2
Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188
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10d05rl151g1n4934rl152g+151n4935rl153grl154g1n4936rl155gsolitron j775-2bt196ss14 toshiba1n5822 toshibass550bt127se140nsr8140snbs25-4001n4007 toshiba
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BYX71-600
Abstract: BYX71-350 philips BYX71-600 BY208 BYX71 MDA2501 Solitron J775-2 30S8 BY198 GI DL005
Contextual Info: RECTRON SEMICONDUCTOR INDUSTRIAL Part No. 40266 40267 1.5KE10 1.5KE10 1.5KE10 1.5KE100 1.5KE100 1.5KE100 1.5KE100A 1.5KE100A 1.5KE100A 1.5KE10A 1.5KE10A 1.5KE10A 1.5KE11 1.5KE11 1.5KE11 1.5KE110 1.5KE110 1.5KE110 1.5KE110A 1.5KE110A 1.5KE110A 1.5KE11A 1.5KE11A
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5ke105ke1005ke100a5ke10a+10byx71-600byx71-350philips byx71-600by208byx71mda2501solitron j775-230s8by198gi dl005
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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irf 544 n mosfetspice 2 computer models for hexfets4af2npp irtransistor d586+6induction cooker fault finding circuit diagramstransistor mos fet d482electronics digesttransistor d357 equivalentd515 transistor1rf511
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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dl151/dnov-2000r14525u840 diode motorola+9motorola u860 diodediode u1560b2045 akau1560 diodeu860 diodeu1560diode u3ju820 diodefast recovery diode ses5001
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A14F diode
Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
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murs220t3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605a14f diodediode marking es2dv352dc "transient voltage suppressordiode a14arg3j 005sr10020010c357d-011n2069
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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mbrb1045vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1650t4 sod-123 1n4004mr25101n2069ses5001mur420 equivalentct pr1504equivalent for fr302 diodemur 460 switchdiode a14a surface mount
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b2545 transistor
Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection
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mbr2535ctmbr2545ctb2535b2545+14vhe205vhe210vhe215vhe220vhe2401b2545 transistorto220 mur460byv43-45mur 460 0801mr756rlmur420 diodeequivalent transistor b25356a10 bl diodediode a14a surface
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045wtvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605equivalent components of diode 1n5399diode ses50016a10 bl diodeequivalent for fr302 diodeequivalent components of diode her104fe8b diodefe8dgi756 diodea14f diodemur420 diode
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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mbrp60035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605fe16bmbr3045pt transistorfr102 sod-1231n4007 sod-123byv43-45byv19-45mur1660ct equivalentmur460 blfep16dt 0032mur420 equivalent
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045ptvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr2835s equivalenta14f diode1n5404 diodefe16amur860 equivalentmur1620ctmur420 diodeusd745c equivalentmbrd360pr1502
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode
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transistor U1620R
Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave
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mur1620ctrmur1620ctvhe205vhe210+16vhe215vhe220vhe2401vhe2402vhe2403vhe2404transistor u1620rfast recovery diode ses5001mur1620ct equivalentpk mur 460 diodepk mur 460transistor mbr4045pt1n2069mbrd360fast recovery diode, 24 amperes, 600 volts, button typestps20h100
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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mbrd835lvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1560 equivalent1n4004 smas1a sod 88s1a marking code sod 881n5189ss33 smadiode marking us1jdiode 6a106tq035usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
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mr852
Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Contextual Info: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120lt3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr852diode mur410ba 5904 a f prs1g footprint wave solderingmur460 blmur1650byv1945murs160t3 smbmbrd360transistor 534
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