IPD45 Search Results

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description T h e ¿¿PD4564441,4664641 are high-speed 67,108,864-bit s y n c h ro n o u s d y n a m ic ra n d o m -a ccess m em ories, org a n ize d as 4,194,304x4x4 and 2,097,152x8x4 wordxbttxbank , respectively.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /IPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.

d4564

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iPD4564441,4564841,4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

AKR 121

Abstract: 4564821G5 A7 RFTA
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4564421, 4564821 64M-bit Synchronous DRAM 2-bank, LVTTL Description The /iPD4564421,4564821 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 8,388,608x4x2 and 4,194,304x8x2 wordxbitxbank , respectively.

A8RN

Abstract: uPD4502161 D4502161
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 0 2 1 6 1 2M-bit Synchronous DRAM Description The /¿PD4502161 is a high-speed 2,097,152-bit synchronous dynamic random-access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.

A725F

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 w ords by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : /¿PD4516421A are assembled.

a1001h

Abstract: C458D
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458DA724 8M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-458DA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M SDRAM : /¿PD4564841 are assembled.

c945 TRANSISTOR equivalent

Abstract: 830GT
Contextual Info: DATA SHEET NEC BIPOLAR ANALOG INTEGRATED CIRCUIT FILTER-CONTAINING VIDEO CHROMA, SYNCHRONIZING SIGNAL PROCESSING LSI COMPATIBLE WITH NTSC/PAL SYSTEM DESCRIPTION The /¿PC1830 is a filter-containing video chroma, synchronizing signal processing LSI compatible with the NTSC/

A10B1

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC725 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB645 4M-W ORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M

D45128841G5-A80

Contextual Info: PRELIMINARY DATA SHEET / - N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 64M-BIT VIRTUAL CHANNEL SDRAM SINGLE DATA RATE 64M-BIT VIRTUAL CHANNEL SDRAM VERSION 1.1 Description The 64 Mbit Virtual Channel VC SDRAM is implemented to be 100% pin and package compatible to the industry standard SDRAM. It uses the same command protocol and interface as SDRAM. The VC SDRAM command set is a

Contextual Info: DA TA SH EE T NEC MOS INTEGRATED CIRCUIT ¿¿PD4565421,4565821, 4565161 64M-BIT VIRTUAL CHANNEL SDRAM Description The 64M -bit Virtual Channel VC SDRAM is implemented to be 100% pin and package compatible to the industry standard SDRAM. It uses the same command protocol and interface as SDRAM. The VC SDRAM command set is a

Sony CCD-Sensor

Abstract: 11 mm CCD-Sensor CCD-Sensor 640 MN37771PT infrared CCD-Sensor MN37210FP camera interface microcontroller heart pulse rate sensor PAL 007 a audio amplifier ic smd 2d 1002 -reel
Contextual Info: Philips Semiconductors Preliminary specification Digital camera USB interface SAA8115HL CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 QUICK REFERENCE DATA 6 BLOCK DIAGRAM 7 PINNING 8 FUNCTIONAL DESCRIPTION 8.1 8.2 8.3 8.4

Contextual Info: P R E L IM IN A R Y D A T A S H E E T _ NEC MOS INTEGRATED CIRCUIT MC-454AD644 4 M-W ORD BY 64-BIT SYN C H R O N O U S DYNAMIC RAM MODULE U NBUFFERED TYPE Description The M C -454A D644 is a 4,194,304 words by 64 bits synchronous dynamic R A M module on which 16 pieces of 16 M

d4516161

Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

NEC uPD 688

Abstract: CQ-111
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x

TCL271

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-458BA72 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T he M C-458B A72 is a 8,388,608 w ords b y 72 bits synchrono us dyna m ic RAM m odule on which 9 pieces of 64 M SD R A M : ¿¿PD4564621 are assem bled.

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB644 3 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458AB644 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64 M SDRAM : //PD4564821 are assembled.

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454BA8C 4M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M SDRAM : ¿¿PD4516421 are assembled.

max100MHZ

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458AB64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module(Small Outline DIMM) on which 8 pieces of 64 M SDRAM : ¿/PD4564821 are assembled.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD644 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD644 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454BC72 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE D escription The MC-454BC72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M