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    IPB100 Search Results

    IPB100 Datasheets (30)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB100N04S2-04
    Infineon Technologies OptiMOS Power-Transistor Original PDF 154.11KB 8
    IPB100N04S204ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF 150.1KB
    IPB100N04S204ATMA4
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF 155.12KB
    IPB100N04S2L-03
    Infineon Technologies OptiMOS Power-Transistor Original PDF 154.36KB 8
    IPB100N04S2L03ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF 150.35KB
    IPB100N04S2L03ATMA2
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF 155.43KB
    IPB100N04S3-03
    Infineon Technologies Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.5 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; Original PDF 198.07KB 9
    IPB100N04S303ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 Original PDF 200.29KB
    IPB100N04S4-H2
    Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2 Original PDF 9
    IPB100N04S4H2ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2 Original PDF 138.32KB
    IPB100N06S2-05
    Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF 156.33KB 8
    IPB100N06S205ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF 152.29KB
    IPB100N06S205ATMA4
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF 157.35KB
    IPB100N06S2L-05
    Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF 156KB 8
    IPB100N06S2L05ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF 151.96KB
    IPB100N06S2L05ATMA2
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 Original PDF 151.97KB
    IPB100N06S3-03
    Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF 189.42KB 9
    IPB100N06S3-03
    Infineon Technologies OptiMOS -T Power-Transistor Original PDF 161.7KB 8
    IPB100N06S3-04
    Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; Original PDF 198.66KB 9
    IPB100N06S3L-03
    Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF 193.45KB 9
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    IPB100 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB100N06S205ATMA4

    Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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    Bristol Electronics IPB100N06S205ATMA4 10 1
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    Rochester Electronics IPB100N06S205ATMA4 45,057 1
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    Infineon Technologies AG IPB100N04S4H2ATMA1

    Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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    IPB100N04S4H2ATMA1 1,500 264
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    IPB100N04S4H2ATMA1 1,355 9
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    IPB100N04S4H2ATMA1 1,000 2
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    Avnet Americas IPB100N04S4H2ATMA1 Tape & Reel 12 Weeks 1,000
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    Mouser Electronics IPB100N04S4H2ATMA1 1,729
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    IPB100N04S4H2ATMA1 1,355 1
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    IPB100N04S4H2ATMA1 Cut Strips 1,000 9 Weeks 1
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    IPB100N04S4H2ATMA1 Cut Tape 666 1
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    Chip 1 Exchange IPB100N04S4H2ATMA1 2,965
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    Infineon Technologies AG IPB100N10S305ATMA1

    Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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    Verical IPB100N10S305ATMA1 964 3
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    Infineon Technologies AG IPB100N12S305ATMA1

    Trans MOSFET N-CH 120V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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    Infineon Technologies AG IPB100N12S3-05

    IPB100N12S3-05
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    IPB100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PN04L03

    Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
    Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipb100n04s2l-03ipp100n04s2l-03pg-to263-3-2pg-to220-3-1+11sp0002-19065pn04l03smd diode code gsapplication note anps071eanps071emarking code r smd diodesmd diode marking 77smd marking codesmd marking code 102smd tr marking code g11transistor smd marking code 42 PDF

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Contextual Info: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original
    ipb100n06s3l-03ipi100n06s3l-03ipp100n06s3l-03pg-to263-3-2+6pg-to262-3-1pg-to220-3-1a1502smd diode code gsq67065-a7009smd code g13 PDF

    3PN0604

    Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Contextual Info: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original
    ipb100n06s3-04ipi100n06s3-04ipp100n06s3-04pg-to263-3-2+5pg-to262-3-1pg-to220-3-1sp0001-022203pn0604transistor smd marking code 04 PDF

    Contextual Info: NEC NEC Electronics Inc. ;iPB100484 4,096 X 4-Bit 100K ECL RAM Description Pin Configurations The /tPB100484 is a very high-speed 100K interface ECL RAM organized as 4,096 words by 4 bits with openemitter outputs noninverted . It is available in 28-pin cerdip or flatpack packages.


    OCR Scan
    ipb100484/tpb10048428-pinjupb100484d-10+4jipb100484b-10mpb10048483ih-5948bppb100484 PDF

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Contextual Info: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original
    ipb100n06s3l-03ipi100n06s3l-03ipp100n06s3l-03pg-to263-3-2+7pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-879783pn06l03690 d80smd code g13 PDF

    3pn1005

    Abstract: IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80
    Contextual Info: IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary Features V DS 100 V R DS on ,max (SMD version) 4.8 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original
    ipb100n10s3-05ipi100n10s3-05ipp100n10s3-05pg-to263-3-2+5pg-to262-3-1pg-to220-3-13pn1005anps071edsv80 PDF

    4N04H2

    Abstract: diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02
    Contextual Info: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.4 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original
    ipb100n04s4-h2ipi100n04s4-h2ipp100n04s4-h2pg-to263-3-2+9pg-to262-3-1pg-to220-3-1ipb100n04s4-024n04h2ipi100n04s4-02diode marking h2marking .h2marking h2smd transistor marking dd PDF

    3pn06l03

    Abstract: ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053
    Contextual Info: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original
    ipb100n06s3l-03ipi100n06s3l-03ipp100n06s3l-03pg-to263-3-2+5pg-to262-3-1pg-to220-3-13pn06l03anps071ed1053 PDF

    PN06L05

    Abstract: PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003
    Contextual Info: IPB100N06S2L-05 IPP100N06S2L-05 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.4 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipb100n06s2l-05ipp100n06s2l-05pg-to263-3-2pg-to220-3-1+6sp0002-19003pn06l05pn06lsp000219003sp0002-18879anps071e PDF

    3pn0403

    Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
    Contextual Info: IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 2.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original
    ipb100n04s3-03ipi100n04s3-03ipp100n04s3-03pg-to263-3-2+4pg-to262-3-1pg-to220-3-13pn0403application note anps071e PDF

    3PN06L04

    Abstract: IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd
    Contextual Info: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original
    ipb100n06s3l-04ipi100n06s3l-04ipp100n06s3l-04pg-to263-3-2+7pg-to262-3-1pg-to220-3-13pn06l04smd code d59anps071e3pn06d59 smd PDF

    IH-5972B

    Contextual Info: /XPB100422 256 X 4-Bit 100K ECL RAM J C /W NEC Electronics Inc. Description Pin Configurations The /iPB100422 is a very high-speed 100K interface ECL RAM organized as 256 words by 4 bits and designed with noninverted, open-emitter outputs and low power con­


    OCR Scan
    upb100422256x4-bit/ipb10042224-pin+4256-word400-milppb100422ih-5972b PDF

    PN08L07

    Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
    Contextual Info: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipb100n08s2l-07ipp100n08s2l-07pg-to263-3-2pg-to220-3-1+10sp0002-19053pn08l07diode smd 86optimossmd marking codepn08l07 sapplication note anps071emarking code r smd diodesmd marking code 102transistor smd marking code ag PDF

    PN0404

    Abstract: IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056
    Contextual Info: IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.3 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipb100n04s2-04ipp100n04s2-04pg-to263-3-2pg-to220-3-1+8sp0002-19061pn0404anps071emarking code r smd diodetransistor smd marking code 42transistor smd marking code agtransistor smd marking code t 04sp0002-19056 PDF

    3PN0604

    Abstract: ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Contextual Info: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original
    ipb100n06s3-04ipi100n06s3-04ipp100n06s3-04pg-to263-3-2+4pg-to262-3-1pg-to220-3-13pn0604anps071e PDF

    Contextual Info: /tPB100A484 4,096 X 4-Bit 100K ECL RAM W M li W NEC Electronics Inc. Description Pin Configurations The /iPB100A484 is a very high-speed 100K interface ECL RAM organized as 4K words by 4 bits and designed with open emitter outputs noninverted . It is available in


    OCR Scan
    upb100a484/ipb100a48428-pin26-pin+4mpb100a484s3ih-5943bh-5949bfipb100a484 PDF

    4N0402

    Abstract: 4n0403 4N0402D IPB100N04S4 IPI100N04S4-03D 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D
    Contextual Info: IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.2 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


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    ipb100n04s4-02dipi100n04s4-03dipp100n04s4-03dpg-to262-3-1+9pg-to263-3-2pg-to220-3-14n04024n04034n0402dipb100n04s44n0403dipb100n04s4-02smd diode 104 PDF

    A SMD CODE MARKING

    Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
    Contextual Info: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow


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    ipb100n06s3-03ipi100n06s3-03ipp100n06s3-03pg-to263-3-2+7pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-87982a smd code marking3pn063pn0603 PDF

    3PN0403

    Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
    Contextual Info: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1


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    ipb100n04s3-03ipi100n04s3-03ipp100n04s3-03pg-to263-3-2+4pg-to262-3-1pg-to220-3-13pn0403gd 898 PDF

    IPP100N04S4-H2

    Abstract: IPB100N04S4-H2 IPI100N04S4-H2 4N04H2 MJ-39
    Contextual Info: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.4 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


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    ipb100n04s4-h2ipi100n04s4-h2ipp100n04s4-h2pg-to262-3-1+4pg-to263-3-2pg-to220-3-14n04h2mj-39 PDF

    IPB100P03P3L-04

    Abstract: 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2
    Contextual Info: IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 OptiMOS -P Trench Power-Transistor Product Summary V DS Features -30 R DS on ,max (SMD version) • P-channel - Logic Level - Enhancement mode 4 ID • Automotive AEC Q101 qualified V mΩ -100 A • MSL1 up to 260°C peak reflow


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    ipb100p03p3l-04ipi100p03p3l-04ipp100p03p3l-04pg-to263-3-2+5pg-to262-3-1pg-to220-3-13p03l04864voptimos battery protection reverse PDF

    3PN06L04

    Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
    Contextual Info: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow


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    ipb100n06s3l-04ipi100n06s3l-04ipp100n06s3l-04pg-to263-3-2+7pg-to262-3-1pg-to220-3-1sp0001-022193pn06l04smd code d59transistor smd marking code 04d59 smd PDF

    PN0807

    Abstract: IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 PG-TO263-3-2 SP0002-19044 c25 diode
    Contextual Info: IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipb100n08s2-07ipp100n08s2-07ipi100n08s2-07pg-to263-3-2+5pg-to220-3-1pg-to262-3-1sp0002-19044pn0807c25 diode PDF

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Contextual Info: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


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    ipi100n06s3-03ipp100n06s3-03ipb100n06s3-033pn0603+3bipp100n06s3-03infineon smd part markinganps071e PDF