IPB100 Search Results
IPB100 Datasheets (30)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IPB100N04S2-04 | Infineon Technologies | OptiMOS Power-Transistor | Original | 154.11KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S204ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 150.1KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S204ATMA4 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 155.12KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S2L-03 | Infineon Technologies | OptiMOS Power-Transistor | Original | 154.36KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S2L03ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 150.35KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S2L03ATMA2 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 155.43KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S3-03 | Infineon Technologies | Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.5 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; | Original | 198.07KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S303ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 200.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S4-H2 | Infineon Technologies | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S4H2ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2 | Original | 138.32KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S2-05 | Infineon Technologies | Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | 156.33KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S205ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | 152.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S205ATMA4 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | 157.35KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S2L-05 | Infineon Technologies | Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | 156KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S2L05ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | 151.96KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S2L05ATMA2 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | 151.97KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3-03 | Infineon Technologies | Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | 189.42KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3-03 | Infineon Technologies | OptiMOS -T Power-Transistor | Original | 161.7KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3-04 | Infineon Technologies | Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; | Original | 198.66KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3L-03 | Infineon Technologies | Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | 193.45KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100 Price and Stock
Infineon Technologies AG IPB100N06S205ATMA4Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB100N06S205ATMA4 | 44,200 | 160 |
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| IPB100N06S205ATMA4 | 1,000 | 1 |
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IPB100N06S205ATMA4 | Cut Strips | 1,000 | 52 Weeks | 1 |
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IPB100N06S205ATMA4 | 10 | 1 |
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IPB100N06S205ATMA4 | 8 |
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IPB100N06S205ATMA4 | 45,057 | 1 |
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IPB100N06S205ATMA4 | 1 |
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Infineon Technologies AG IPB100N04S4H2ATMA1Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB100N04S4H2ATMA1 | 2,000 | 1,000 |
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| IPB100N04S4H2ATMA1 | 1,500 | 264 |
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| IPB100N04S4H2ATMA1 | 1,355 | 9 |
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IPB100N04S4H2ATMA1 | Tape & Reel | 12 Weeks | 1,000 |
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IPB100N04S4H2ATMA1 | 1,729 |
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IPB100N04S4H2ATMA1 | 2,000 | 12 Weeks | 1,000 |
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| IPB100N04S4H2ATMA1 | 1,355 | 1 |
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| IPB100N04S4H2ATMA1 | Cut Strips | 1,000 | 9 Weeks | 1 |
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IPB100N04S4H2ATMA1 | Tape & Reel | 666 | 100 |
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IPB100N04S4H2ATMA1 | 1,500 | 1 |
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IPB100N04S4H2ATMA1 | 1,000 |
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IPB100N04S4H2ATMA1 | 2,965 |
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IPB100N04S4H2ATMA1 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB100N10S305ATMA1Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB100N10S305ATMA1 | 964 | 3 |
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IPB100N10S305ATMA1 | Tape & Reel | 1,000 |
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IPB100N10S305ATMA1 | Cut Strips | 964 | 12 Weeks | 1 |
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IPB100N10S305ATMA1 | 2,104 | 1 |
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IPB100N10S305ATMA1 | 1,000 |
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IPB100N10S305ATMA1 | 13 Weeks | 1,000 |
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IPB100N10S305ATMA1 | 7,294 |
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Infineon Technologies AG IPB100N12S305ATMA1Trans MOSFET N-CH 120V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB100N12S305ATMA1 | 886 | 133 |
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IPB100N12S305ATMA1 | 408 |
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IPB100N12S305ATMA1 | Cut Strips | 638 | 9 Weeks | 1 |
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IPB100N12S305ATMA1 | 2,321 | 1 |
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IPB100N12S305ATMA1 | 1,000 |
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Infineon Technologies AG IPB100N12S3-05IPB100N12S3-05 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB100N12S3-05 | 878 | 15 |
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IPB100N12S3-05 | 702 |
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IPB100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PN04L03
Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
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Original |
ipb100n04s2l-03ipp100n04s2l-03pg-to263-3-2pg-to220-3-1+11 | |
A1502
Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
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Original |
ipb100n06s3l-03ipi100n06s3l-03ipp100n06s3l-03pg-to263-3-2+6 | |
3PN0604
Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
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Original |
ipb100n06s3-04ipi100n06s3-04ipp100n06s3-04pg-to263-3-2+5 | |
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Contextual Info: NEC NEC Electronics Inc. ;iPB100484 4,096 X 4-Bit 100K ECL RAM Description Pin Configurations The /tPB100484 is a very high-speed 100K interface ECL RAM organized as 4,096 words by 4 bits with openemitter outputs noninverted . It is available in 28-pin cerdip or flatpack packages. |
OCR Scan |
ipb100484/tpb10048428-pinjupb100484d-10+4 | |
3pn06l03
Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
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ipb100n06s3l-03ipi100n06s3l-03ipp100n06s3l-03pg-to263-3-2+7 | |
3pn1005
Abstract: IPP100N10S3-05 IPB100N10S3-05 IPI100N10S3-05 ANPS071E PG-TO263-3-2 DSV80
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Original |
ipb100n10s3-05ipi100n10s3-05ipp100n10s3-05pg-to263-3-2+5 | |
4N04H2
Abstract: diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02
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Original |
ipb100n04s4-h2ipi100n04s4-h2ipp100n04s4-h2pg-to263-3-2+9 | |
3pn06l03
Abstract: ANPS071E IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 D1053
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Original |
ipb100n06s3l-03ipi100n06s3l-03ipp100n06s3l-03pg-to263-3-2+5 | |
PN06L05
Abstract: PN06L IPP100N06S2L-05 SP000219003 SP0002-18879 ANPS071E IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003
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Original |
ipb100n06s2l-05ipp100n06s2l-05pg-to263-3-2pg-to220-3-1+6 | |
3pn0403
Abstract: IPB100N04S3-03 IPP100N04S3-03 IPI100N04S3-03 PG-TO263-3-2 Application Note ANPS071E
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Original |
ipb100n04s3-03ipi100n04s3-03ipp100n04s3-03pg-to263-3-2+4 | |
3PN06L04
Abstract: IPI100N06S3L-04 SMD code d59 ANPS071E IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2 3pn06 d59 smd
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Original |
ipb100n06s3l-04ipi100n06s3l-04ipp100n06s3l-04pg-to263-3-2+7 | |
IH-5972BContextual Info: /XPB100422 256 X 4-Bit 100K ECL RAM J C /W NEC Electronics Inc. Description Pin Configurations The /iPB100422 is a very high-speed 100K interface ECL RAM organized as 256 words by 4 bits and designed with noninverted, open-emitter outputs and low power con |
OCR Scan |
upb100422256x4-bit/ipb10042224-pin+4 | |
PN08L07
Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
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Original |
ipb100n08s2l-07ipp100n08s2l-07pg-to263-3-2pg-to220-3-1+10 | |
PN0404
Abstract: IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056
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Original |
ipb100n04s2-04ipp100n04s2-04pg-to263-3-2pg-to220-3-1+8 | |
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3PN0604
Abstract: ANPS071E IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
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Original |
ipb100n06s3-04ipi100n06s3-04ipp100n06s3-04pg-to263-3-2+4 | |
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Contextual Info: /tPB100A484 4,096 X 4-Bit 100K ECL RAM W M li W NEC Electronics Inc. Description Pin Configurations The /iPB100A484 is a very high-speed 100K interface ECL RAM organized as 4K words by 4 bits and designed with open emitter outputs noninverted . It is available in |
OCR Scan |
upb100a484/ipb100a48428-pin26-pin+4 | |
4N0402
Abstract: 4n0403 4N0402D IPB100N04S4 IPI100N04S4-03D 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D
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Original |
ipb100n04s4-02dipi100n04s4-03dipp100n04s4-03dpg-to262-3-1+9 | |
A SMD CODE MARKING
Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
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Original |
ipb100n06s3-03ipi100n06s3-03ipp100n06s3-03pg-to263-3-2+7 | |
3PN0403
Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
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Original |
ipb100n04s3-03ipi100n04s3-03ipp100n04s3-03pg-to263-3-2+4 | |
IPP100N04S4-H2
Abstract: IPB100N04S4-H2 IPI100N04S4-H2 4N04H2 MJ-39
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Original |
ipb100n04s4-h2ipi100n04s4-h2ipp100n04s4-h2pg-to262-3-1+4 | |
IPB100P03P3L-04
Abstract: 864V 3P03L04 optimos battery protection reverse IPI100P03P3L-04 IPP100P03P3L-04 PG-TO263-3-2
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Original |
ipb100p03p3l-04ipi100p03p3l-04ipp100p03p3l-04pg-to263-3-2+5 | |
3PN06L04
Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
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Original |
ipb100n06s3l-04ipi100n06s3l-04ipp100n06s3l-04pg-to263-3-2+7 | |
PN0807
Abstract: IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 PG-TO263-3-2 SP0002-19044 c25 diode
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Original |
ipb100n08s2-07ipp100n08s2-07ipi100n08s2-07pg-to263-3-2+5 | |
3PN0603
Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
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Original |
ipi100n06s3-03ipp100n06s3-03ipb100n06s3-033pn0603+3 | |