INTERNATIONAL RECTIFIER 435 Search Results

D468

Contextual Info: INTERNATIONAL RECTIFIER bSE D • MflSSMSB 0017SDE 765 ■ INR PD-2.282 International H Rectifier 440CNQ030 SCHOTTKY RECTIFIER 440 Amp Major Ratings and Characteristics Characteristics !F AV Rectangular waveform V RRM Descri ption/Featu res 440CNQ030 Units

Contextual Info: LSE D INTERNATIONAL RECTIFIER • 4355452 0017220 2 4 e! H I N R PD-2.308 4 o c p q o 5o International [k ^ J Rectifier 4 o c pq o 6 o SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Description/Features The 40CPQ. center tap Schottky rectifier has been opti­

Contextual Info: S^E D HÖSSHS2 ODlEbBfi 2bS • INR I PD-2.327 INTERNATIONAL RECTIFIER International [^Rectifier SD51 SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features TheSD51 Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The propri­

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: 5TE D • 4Ô55452 GÜ12SSÔ *435 ■ INR PD-2.321 INTERNATIONAL RECTIFIER MBR2080CT m b r2 0 9 0 ct m b r2 o io o c t International S Rectifier SCHOTTKY RECTIFIER 20 Amp Description/Features Major Ratings and Characteristics Characteristics MBR20.CT Units

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

2N6764 JANTX

Abstract: 2n6764 9337d 2N6763
Contextual Info: H E D | 4355452 INTERNATIONAL Q0Q131Ö b | T - i f ' / -3 Data Sheet No. PD-9.337D RECTIFIER INTERNATIONAL RECTIFIER HEXFETTRANSISTORS I O R *JANTXV2N67B4 *JANTX2N6764 JEDEC REGISTERED IM-CHANNEL POWER MOSFETs SN6764 SN6763 ‘ QUALIFIED TO MIL-S-19500/543

Triac 12F

Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

jedec package TO-243AA

Abstract: G0177
Contextual Info: INTERNATIONAL RECTIFIER bSE ]> 4655452 OOlTb'H 122 * I N R Data Sheet No. PD-2.176 INTERNATIONAL RECTIFIER X O R 10J SERIES 1 Amp Surface Mount Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics 10J 'F A V 1.0 A @ Max. T ^ 31

Contextual Info: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

RF530

Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Contextual Info: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS

IRFD9110

Contextual Info: International jreg Rectifier I 4Ô55455 0015G56 33T * I N R _ IRFD9110 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • PD'9389G Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable fc.SE D V qss - "100V

1RF540

Abstract: RF540 mosFET 1RF540 IRF540 application note Application Note of IRF540 IRF540 International Rectifier irf540 mosfet control motor irf541 IRF540 application irf540 spice
Contextual Info: HE D I 4Ö55452 0000450 b | Data Sheet No. PD-9.373G INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRFS4Q IRFS41 IRF542 IRFS43 HEXFEF TRANSISTORS N-CHANNEL

1RF620S

Contextual Info: International k ?r Rectifier • PD-9.900 _ IRF620S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4A554S2 0014704 b4fi ■ INR Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching

FD9515

Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
Contextual Info: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International

F9530

Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
Contextual Info: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s

1RF720

Abstract: 147L2 MSSS2 9315J
Contextual Info: International ioR Rectifier 4ÔSS452 a n • INR PD-9.315J IRF720 HEXFET Power M O SFET • • • • • 0014750 INTERNATIONAL RECTIFIER bSE Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D

d872

Abstract: d0147
Contextual Info: International i“R Rectifier HEXFET Power MOSFET • • • • • 4055455 001474b QT7 • INR PD.9 527B IRF644 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSED V DSS = 250V

diode B14A

Abstract: IRFIP450 B14A diode B14A B14A marking irf-ip450 9645a
Contextual Info: 4flSS4S5 0015355 bbM • International K?R Rectifier INR PD-9.645A IRFIP450 INTERNATIONAL RECTIFIER b5E D HEXFET Power MOSFET Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm

Contextual Info: Data Sheet No. PD-9.676A INTERNATIONAL RECTIFIER I @ R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7130 IRHB130 MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

c624 DIODE

Abstract: c619 DIODE diode c624 c617 DIODE c619 IRFPG42 c618 diode IRFPG40 C620 diode irfpg
Contextual Info: HE 0 I MflSSMSE QODâûbô 3 | INTERNATIONAL Data Sheet No. PD-9.576A RECTIFIER INTERNATIONAL RECTIFIER I Ö R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG40 IRFPG42 N-CHANNEL 1000 Volt, 3.5 Ohm HEXFET TO-247AC TO-3P Plastic Package Product Summary

S1B02

Abstract: lts 542 2N6761
Contextual Info: H E D I MflS5M52 INTERNATIONAL 000^314 T | Data Sheet No. PD-9.336D RECTIFIER T - 3 7 - / f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IQR *JANTXV2NB762 *JAI\ITX2NB762 JEDEC REGISTERED IU-CHAIUIMEL G POWER MOSFETs 2N 6762 2N67G1 ‘ QUALIFIED TO MIL-S-19500/542

F9232

Abstract: IRF9233 Irf9230
Contextual Info: HE D I 4ÖSSM52 GOO^Et. 1 | Data Sheet No. PD-9.349D INTERNATIONAL R E C T I F I E R 1 -3 ? ^ f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFS230 IRF9S3Ì P-CHANIMEL 2 0 0 VOLT IRF9S3S POWER MOSFETs IRF9S33 -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET technology is the key to International Rectifier’s

irf730

Abstract: diode zd 22
Contextual Info: 4 5 5 5 45 2 □□1 4 ?b 4 012 • International H g Rectifier INR PD-9.308K IRF730 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements b5E J> V DSS = 400V