INTEL CMOS PLD Search Results

Contextual Info: Ml intpl 6 1992 ÌPLD610 FAST 16-MACROCELL CMOS PLD Function, Pin, and JEDEC Compatible with EP600, EP610, EP610A, EP630, PALCE610,85C060 and 5C060 PLDs • tpo 10 ns, 100 MHz Counter Frequency w/lnternal Feedback ■ Extensive Software and Programming Support via Intel and Third Party Tools

Contextual Info: m ft i m intpl ¡PLD910 FAST 24-MACROCELL CMOS PLD Function, Pin, and JEDEC Compatible with EP900, EP910, EP910A, 85C090 and 5C090 • tpo 12 ns, 62.5 MHz w/Feedback, Clock to Output 8 ns ■ Extensive Software and Programming Support via Intel and Third-Party Tools

IDT71589

Abstract: fm 7088
Contextual Info: Integrated Device Technology, inc. PRELIMINARY IDT7MP6085 IDT7MP6087 128K/ 256K BYTE CMOS SECONDARY CACHE MODULE FOR THE INTEL i486™ FEATURES: • 128K/ 256K byte pin compatible secondary cache modules • Ideal for use with Chips and Technologies M/PAX™

P85C060-25

Abstract: D85C060 PLD610-25 D85C060-25 intel 85C060 D85C060-15 IPLD610-15 EP610 ORDERING p85c060 N85C060-12
Contextual Info: INTEL CORP tIEMORY/PLD/ in t e l SbE D • HfiSblTb D077infl fl3£ ^p ÌPLD610/85C060 FAST 16-MACROCELL CMOS PLD h ITL2 ^ '^ - o 0 Function, Pin, and JEDEC Compatible with EP600, EP610, EP610A, EP630, PALCE610,85C060 and 5C060 PLDs ■ tpo 10 ns, 100 MHz Counter Frequency

Contextual Info: 128K BYTE CMOS SECONDARY CACHE MODULE FOR THE INTEL i486™ PRELIMINARY IDT7MP6086 Integrateli Device Technology, Inc. FEATURES: • 128K byte direct mapped secondary cache module • Uses the IDT71589 32K x 9 CacheRAM™ with burst counter and self-timed write

intel PLD

Abstract: intel 1150 Socket PIN diagram
Contextual Info: SflE » INTEL CORP MEMORY/PLD/ • 4 ö 2 b l 7 b ODfiOTbl Û1E « I T L 2 ß lftg y M O ß S M V in t e i ¡M28F010 1024K (128K x 8 CMOS FLASH MEMORY ETOXtm-II Flash-Memory Technology — EPROM-Compatible Process Base — High-Volume Manufacturing Experience

npld910-25

Abstract: 85C090 P85C090 p85c090-25 PLD910-15 TN85C090-25 INTEL PLD910 npld intel PLD NPLD910-12
Contextual Info: INTEL CORP MEMORY/PL] / SbE J> m 4 A 2 b l 7 b 0 0 7 7 5 1 7 514 • I T L 2 ir r te l. P W io - 1 ^ - 0 ^ ¡PLD910/85C090 FAST 24-MACROCELL CMOS PLD Function, Pin, and JEDEC Compatible with EP900, EP910, EP910A, 85C090 and 5C090 Extensive Software and Programming

N28F512-150

Abstract: 26F512 intel PLD
Contextual Info: INTEL CORP MENORY/PLP/ irrte1 5bE I • 182i,l?t, D07fa233 D27 28F512 512K (64K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jLts Typical Byte-Program — 1 Second Chip-Program

PLD intel

Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program

intel 28F020

Abstract: flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020
Contextual Info: INTEL CORP ÏÏEMORY /P L D / SbE D • 4f l2 bl 7 b QOTbETl 72^ ■ I T L 2 in t e i 2048K (256K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chlp-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jLLSTypical Byte-Program

D85C060-25

Abstract: PLD610 85C060 P85C060-25 PLD610-25 P85C060-15 D85C060-10 intel 85C060 n85c060 pld610-15
Contextual Info: intel ¡PLD610/85C060 FAST 16-MACROCELL CMOS PLD Function, Pin, and JEDEC Compatible with EP600, EP610, EP610A, EP630, PALCE610, 85C060 and 5C060 PLDs • tpD 10 ns, 100 M H z C o u n te r F req u en cy w /ln te rn a l F e e d b a c k ■ E xte n s ive S o ftw a re an d P ro g ram m in g

PLA 16L8

Abstract: 5c031 290154 EP310C D5C031-50
Contextual Info: intei 5C031 300 GATE CMOS PLD • High Density, Low Power Replacement for SSI & MSI Devices and Bipolar PLDs. ■ Up to 18 Inputs 10 Dedicated & 8 I/O and 8 Outputs. ■ Eight Macrocelis with Programmable I/O Architecture. ■ tpo = 40 ns (max), 29.4 MHz Pipelined,

5C031

Abstract: ep310 D5C031
Contextual Info: 5C031 300 GATE CMOS PLD • High Density, Low Power Replacement for SSI & MSI Devices and Bipolar PLDs. ■ Up to 18 Inputs 10 Dedicated & 8 I/O and 8 Outputs. ■ Eight Macrocells with Programmable I/O Architecture. ■ tpo = 40 ns (max}, 29.4 MHz Pipelined,

5C031

Abstract: PLA 16L8 5CO31 16L2 16L8 16R8 74HC EP310 EP310 programmable 290154
Contextual Info: 5C031 300 GATE CMOS PLD • High Density, Low Power Replacement for SSI & MSI Devices and Bipolar PLDs. ■ Up to 18 Inputs 10 Dedicated & 8 I/O and 8 Outputs. ■ Eight Macroceiis with Programmable I/O Architecture. ■ tpo = 40 ns (max), 29.4 MHz Pipelined,

Contextual Info: ADVANCED IN FO RM A TIO N P L D L V 2 2 V 10-15 Low Voltage, High Performance 10-Macrocell CMOS PLD Low Voltage, High Speed Upgrade to BiCMOS/Bipolar 22V 10 and CMOS Equivalents • Variable P -term s-U p to 16 per Macrocell, Selectable Output Polarity, Separate Output

Contextual Info: JUL i î lïSQ in tJ ¡PLD22V10-7 FAST 10-MACROCELL CMOS PLD High-Speed Upgrade to Bipolar 22V10 and CMOS Equivalents • tpD 7.5 ns, 111.1 MHz with Feedback, 111.1 MHz with No Feedback ■ 1-Micron CHMOS IIIE EPROM Technology ■ Typical Ice = 90 mA @ 15 MHz

Contextual Info: 85C220/85C224-7 AND -10 FAST TpD, HALF-POWER 8-MACROCELL PLDs These Combinatorial Optimized Timing PLDs Offer Superior Design Features: • High-Performance Low-Power Upgrade for -7 and -10 Bipolar/CMOS* PLD’s in High-Performance Systems ■ tpo 7.5 ns, 74 MHz Frequency with

Q07S

Abstract: 18CV EZ-319 p85c22066 ep330 85C220 intel PLD 290134 p85c220-80
Contextual Info: INTEL CORP intgJ Mû Sb 17b 00721=52 7 MME D MEMORY/PLD/ XTL2 85C220-80 FAST 1-MICRON CHMOS 8-MACROCELL jmPLD High-Performance, Low-Power Upgrade for SSI/MSI Logic and Bipolar PALs* in lntel386TM, 1486TM, i860 , 80960 Series, and Other High-Performance Systems

PAL16L8 programming algorithm

Abstract: 85c220 P85C220-10 n85c224-7 74s* programming AMD palce16v8 programming intel PLD 290134 intel Series Gate Array palce16v8 programming algorithm
Contextual Info: 85C220/85C224-7 AND -10 FAST T pd, HALF-POWER 8-MACROCELL PLDs These Combinatorial Optimized Timing PLDs Offer Superior Design Features: • High-Performance Low-Power Upgrade for -7 and -10 Bipolar/CMOS* PLD’s in High-Performance Systems ■ tpo 7.5 ns, 74 MHz Frequency with

27CS12

Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Contextual Info: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming

Contextual Info: JUL 1 £ inlel ÌPLDLV22V10 FAST 10-MACROCELL CMOS PLD Low Voltage Hlgträpeed Upgrade to Bipolar 22V10 and CMOS Equivalents • Supply Voltage Range 3.0V to 3.6V ■ tpo 15 ns, 50 MHz with Feedback, 83.3 MHz with No Feedback ■ Max Icc = 35 mA ■ 12 Dedicated Inputs and 10 I/O Pins

mtbf intel

Abstract: 28F008SA intel PLD 29042 UG773
Contextual Info: ADVANCE INFORMATION i n U CORP MEMORY/PLD/ SbE D • 4ûEbl7b Q 07 732 2 O IT B I T L E 28F008SA-L 8 MBIT (1 MBIT x 8 FLASHFILE MEMORY High-Density Symm etrically Blocked Architecture — Sixteen 64 KByte Blocks Low-Voltage Operation — 3.3V ± 0.3V or 5.0V ± 10% V cc

intel eprom Intelligent algorithm

Abstract: programmer schematic ep320 P5C032-35 5c03235 P5C032 290155 P5C032-40 EP3201 D5C032-35
Contextual Info: i n t o l . 5C032 8-MACROCELL CMOS PLD • High-Density, Low-Power Replacement for SSI & MSI Devices and Bipolar PLDs ■ Programmable “Security Bit” Allows Total Protection of Proprietary Designs ■ Up to 18 Inputs 10 Dedicated & 8 I/O and 8 Outputs

28F400BX-B

Abstract: 28F400BX-T 28F004BX-B 28F004BX-T intel PLD PA28F400BX
Contextual Info: INTEL CORP HENORY/PLD/ SbE D 4fl5bl7L, 007fc.44D 0 2 e! • i ITL2 D K lF O l^ lîü l T rO O M in te l 28F400BX-T/B, 28F004BX-T/B 4 MBIT (256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY Very High-Performance Read — 60/80 ns Maximum Access Time — 30/40 ns Maximum Output Enable