E28F020 Search Results

E28F010

Abstract: E28F020
Contextual Info: CIC-32TS-32D-A6-YAM-S 32-Lead TSOP to a 32-Pin DIP 7/97 EXAMPLES TSOP DEVICES: PIN CONFIGURATION: E28F010 E28F020 E28F001BX SOCKET: Yamaichi IC191-0322-001 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $90.00 $81.00 $76.50 $67.50 TYPICAL DIMENSIONS: (Drawings not to scale)

E28F010

Abstract: E28F020
Contextual Info: CIC-32TS-32D-A6-YAM-S 32-Lead TSOP to a 32-Pin DIP 3/98 EXAMPLES TSOP DEVICES: PIN CONFIGURATION: E28F010 E28F020 E28F001BX SOCKET: Yamaichi IC191-0322-001 PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49 $90.00 $81.00 $76.50 $67.50 TYPICAL DIMENSIONS: (Drawings not to scale)

IN6AG

Abstract: 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

34064p

Abstract: 28F010T "WORM"
Contextual Info: intei A P ' 3 4 3 APPLICATION NOTE Solutions for High Density Applications Using Intel Flash Memory MARKUS A. LEVY DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION March 1994 Order Number: 292079-005 6-185 Solutions For High Density Applications Using Intel Flash Memory

SSC16E

Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program

a56 transistor

Abstract: DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Needhams Electronics 4630 Beloit Drive #20 Sacramento, CA 95838 REF: Intel and Needhams Electronics Test Services Agreement dated 10/30/95 Dear PROM Programmer Vendor:

M28F512-12C3

Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
Contextual Info: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild

intel 80c186

Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read

TSOP56

Abstract: 302A F28F020 TSOP-56 DD28F032SA E28F008SA DIP48 psop44 intel E28F008BE
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 October 7, 1997 Intel Corporation 1900 Prairie City Rd. Folsom, CA 95630 Dear Programmer Vendor: I am pleased to inform Intel Corp. that your device programming hardware and software has passed programmer

intel 28F020

Abstract: flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020
Contextual Info: INTEL CORP ÏÏEMORY /P L D / SbE D • 4f l2 bl 7 b QOTbETl 72^ ■ I T L 2 in t e i 2048K (256K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chlp-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jLLSTypical Byte-Program

intel eprom Intelligent algorithm

Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
Contextual Info: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read

PPH 2222 36

Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

pioneer PAL 007 A

Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
Contextual Info: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions

PLCC pin configuration

Abstract: 40d capacitor 48 tsop flash pinout tsop 48 PIN SOCKET CIC-44PS-44D-A6-YAM psop 44 of PA28F008SA transistor A6 datasheet transistor a6 s 48TS-40D-A6-WEL-S TSOP 56 socket
Contextual Info: SOCKET ADAPTERS CALIFORNIA INTEGRATION COORDINATORS Flash Programming Adapters • ■ ■ ■ ■ ■ ■ ■ ■ ■ Signal integrity - using 6 layer board design - decoupling capacitors optional High quality - durable and easy-touse sockets Long life - plug-in socket option

39BASE-0101

Abstract: 39BASE-0201 l 0701 testing of diode DD28F032SA E28F008SA 39BASE-9901
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Data I/O Corp. 10525 Willows Rd. NE Redmond, WA 98073 REF: Intel and Data I/O Corp. Test Services Agreement dated 08/15/95 Dear PROM Programmer Vendor: I am pleased to inform Data I/O Corp. that your PROM programming hardware and software has passed

E28F016SV-70

Abstract: E28F016SV70 E28F016SA70 44PS A6 t E28F016SA-70 N28F010-120 P629 transistor A6 datasheet transistor a6 s
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 SMS Mikrocomputer Systeme GmbH Im Grund 15 D-88239 Wangen, Germany REF: Intel and SMS Mikrocomputer Systeme GmbH Test Services Agreement dated 05/08/96 Dear PROM Programmer Vendor:

28f020-150

Abstract: 28F020-200 intel 28F020
Contextual Info: in te i, 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Qulck-Pulse P r o g r a m m in g T M Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles Typical

P28F020-150

Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

report on PLCC

Abstract: TSOP 56 socket Intel 56 TSOP TSOP 44 socket TSOP 56 psop 44 TSOP 48 socket DD28F032SA E28F008SA Intel 48 TSOP
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Intel Corp. 1900 Prairie City Rd. Folsom, CA 95630 Dear PROM Programmer Vendor: I am pleased to inform Intel Corp. that your PROM programming hardware and software has passed PROM

Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for

n28f020-150

Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read

Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp

TN80C196KC20

Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
Contextual Info: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.