18CV Search Results

hy18cv8s

Abstract: low cost eeprom programmer circuit diagram altera EP300 Altera ep310 EP300 HYUNDAI i10 10L8 16H8 HY18CV8 R1-48-*-F
Contextual Info: AL 18CV8 HYUNDAI SEMICONDUCTOR CMOS EEPLD DESCRIPTION FEATURES T he H Y 18CV8 is a CM O S E lectrically E ra sa­ ble P rogram m able Logic Device E E P L D th at provides a high perform ance; low power, re­ program m able and architecturally flexible alter­

Contextual Info: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • ■ Ultra Low Power Operation Architectural Flexibility - V cc = 5 Volts ±10% - Icc = 10 |iA typical at standby - Icc = 2 mA (typical) at 1 MHz - CMOS Electrically Erasable Technology

ICT 18CV8

Contextual Info: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed Power, Temperature Options Architectural Flexibility - Vcc = 5 Volts ±10% - Speeds ranging from 5ns to 25 ns - Power as low as 37mA at 25MHz

altera EP300

Abstract: 18CV8 18cv8 programming altera ep 18cv8s 10391-D
Contextual Info: GOULD SEMIC ONDU CTOR DIV 03E D | MDSSilti □□103S2 4055916 GOU LD S EM IC O N D U C T OR DIV -> GOULO Electronics 03E 10382 D CMOS e 2p l d Electrically Erasable Programmable Logic PEEL 18CV8 Features • Synchronous preset, asynchronous clear • Independent output enables

PAL16V8

Abstract: 18CV8Z PEEL18CV8ZJ-25
Contextual Info: To Notfind recommended out if the package for New you designs need isavailable, contactcontact factoryCustomer for availability Service PEEL 18CV8Z -25 CMOS Programmable Electrically Erasable Logic Device Features Ultra Low Power Operation - Vcc = 5 Volts ±10%

ICT 18CV8

Abstract: 18CV8 PEEL18CV8P-15 ICT 20 PIN PLASTIC 300 MIL DIP programmer EPLD 18cv8 programming free circuit eeprom programmer PEEL18CV PEEL18CV8J-5 PEEL18CV8P-7
Contextual Info: Commercial/ Industrial PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed Power, Temperature Options - VCC = 5 Volts ±10% - Speeds ranging from 5ns to 25 ns - Power as low as 37mA at 25MHz - Commercial and industrial versions available

ICT 18CV8Z

Abstract: ICT PEEL18CV8ZP-25 18CV8Z-25 16V8 18CV8 PAL16V8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZJI-25
Contextual Info: Commercial PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz ■ CMOS Electrically Erasable Technology - Superior factory testing

Contextual Info: S4E D 4ÖM0707 0001037 3t>2 « I C T I C T INC Preliminary Information INC. PEEL 18CV8L-15 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins — Independently programmable 12-con­

ict peel 18cv8

Abstract: 18CV8 International CMOS Technology PEEL18CV8P-10 ICT Peel PEEL programming 18cv8 programming International CMOS Technology PEEL18CV8P-15 PEEL18CV8P-25 PEEL18CV8PI-25
Contextual Info: International CMOS Technology Commercial/ Industrial PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed Power, Temperature Options - VCC = 5 Volts ±10% - Speeds ranging from 5ns to 25 ns - Power as low as 37mA at 25MHz

PAL16V8

Abstract: 16V8 18CV8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZS-25 18CV8Z-25
Contextual Info: PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz ■ CMOS Electrically Erasable Technology - Superior factory testing

PAL16V8

Abstract: 16V8 18CV8 PEEL18CV8ZJ-25 PEEL18CV8ZP-25 PEEL18CV8ZS-25 PEEL18CV8ZJ25 PEEL18CV8ZP-25L
Contextual Info: PEEL 18CV8Z -25 CMOS Programmable Electrically Erasable Logic Device Features Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz Architectural Flexibility - Enhanced architecture fits in more logic

18CV8

Abstract: 18CV825 18CV815 18cv8 programming 18CV8-15 HAS64 PEEL18CV8 AMI PEEL18CV8
Contextual Info: AMI PEEL 18CV8 SEMICONDUCTORS February 1993 CMOS Programmable Electrically Erasable Logic Device General Description Features The AMI 18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,

pal16v8

Abstract: dec mer PEEL18CV8ZP-25L
Contextual Info: ic PEEL 18CV8Z -25 CMOS Programmable Electrically Erasable Logic Device Features Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz Architectural Flexibility - Enhanced architecture fits in more logic

Contextual Info: • > GOULD AMI CM OS Programmable Electrically Erasable Logic Device Prelim inary Data Sheet Semiconductors PEEL 18CV8-10 Features — Synchronous preset, asynchronous clear — Independent output enables • A dvanced C M O S E EPRO M Technology • A pplication Versatility

PEEL18CV8P-15

Abstract: PEEL18CV8S-7
Contextual Info: Not recommended for New designs contact factory for availability PEEL 18CV8 -7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility - Enhanced architecture fits in more logic - 74 product terms x 36 input AND array

Contextual Info: A im • P EEL 18CV8L STANDARD PRODUCTS American Microsystems, Inc. March 1994 CMOS Programmable E lectrically Erasable Logic Device Features General Description The AMI 18CV8L is a low voltage CMOS Programmable Electrically Erasable Logic device that

PEEL18CV8P-15

Abstract: PEEL18CV8J-10 PEEL18CV8P 18CV8 PEEL18CV8P-25L PEEL18CV PEEL18CV8J-25 PEEL18CV8JI-25 PEEL18CV8P-25 PEEL18CV8J-7
Contextual Info: PEEL 18CV8 -7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility - Enhanced architecture fits in more logic - 74 product terms x 36 input AND array - 10 inputs and 8 I/O pins - 12 possible macrocell configurations

Contextual Info: HÔM07Ü7 0Q003SD 7 M I C I 37E D INTERNATIONAL C M O S Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. T -4 6 -1 9 - o T 18CV8-1 0/PEECm 18CV8-12 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility • 1-Micron CMOS EEPROM Technology

Contextual Info: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • - ■ Architectural Flexibility Multiple Speed Power, Temperature Options - Enhanced architecture fits in m ore logic - 74 product te rm s x 36 input AN D array

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL. 18CV8 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins — Independent configurable I/O macro cells — Synchronous preset, asynchronous clear

PEEL18CV815

Contextual Info: ET INC. PEEL 18CV8-15 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility • Industrial Grade Operation — — — Low Power Consumption — — CMOS:9C mA standby +0.5m A/M Hz max TTL: 105mA standby + 0.5mA/MHz max —

18cv8z-25

Abstract: PEELTM18CV8Z PEEL18CV8ZJI PEEL18CV8ZJI-25
Contextual Info: Commercial PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 µA typical at standby - Icc = 2 mA (typical) at 1 MHz ■ CMOS Electrically Erasable Technology - Superior factory testing

ICT 20 PIN PLASTIC 300 MIL DIP

Abstract: ICT PEEL18CV8ZP-25 18cv8z
Contextual Info: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • Ultra Low Power Operation - Vcc = 5 Volts ±10% - Icc = 10 pA typical at standby - Ice = 2 mA (typical) at 1 MHz ■ CMOS Electrically Erasable Technology

18CV825

Abstract: PEEL18CV8 AMI 18CV8 18cv8 programming ami equivalent gates ami equivalent gates of each core cell PEEL18CV8 18CV8-15
Contextual Info: PEEL 18CV8 AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 General Description Features The AMI 18CV8 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,