27CS12 Search Results

27pc512-2

Abstract: 27PC512-20 TMS27C512
Contextual Info: TMS27C512 65536 BY frBITUV ERASABLE TMS27PC512 65536 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS812G - NOVEMBER 1985 - REVISED SEPTEMBER 1997 • Organization. . . 65 536 by 8 Bits J PACKAGE • Single 5-V Power Supply TO P VIEW • Pin Compatible With Existing 512K MOS

Contextual Info: 27C512A M ic r o c h ip 512K 64K x 8 CMOS EPROM FEATURES PACKAGE TYPE TSOP • High speed performance • CMOS Technology for low power consumption - 25 mA Active current - 30 n-A Standby current • Factory programming available • Auto-insertion-compatible plastic packages

intel 27C011

Abstract: 27C128 INTEL 27C513 27C128 st make 27C011 27C128 27C256 27C64 27CS12 87C64
Contextual Info: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and

C27C64Q

Abstract: MC27C64 C27C B634
Contextual Info: NMC27C64 tß National Semiconductor NMC27C64 65,536-Bit 8192 x 8 CMOS EPROM General Description Features The N M C27C64 is a 64K UV erasable, e lectrically re pro ­ gram m able and one-tim e program m able (OTP) CM OS EPROM ideally suited fo r a pplications w here fa s t tu rn ­

27C512

Abstract: 27C512-15 27C512-150 eprom 27C512 CY27C512
Contextual Info: r CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

27CS12

Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Contextual Info: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming

k5m capacitor

Abstract: 27C128 INTEL eprom 27c64 PROGRAMMER CIRCUIT ic 27c64 intel 27C011 27CS12 2732A TVR 07 spec 27C011 27C128
Contextual Info: in te i 27C513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ 170 ns Access Time ■ Two Line Control ■ Low Power — 30 mA max. Active — 100 f i A max. Standby

Contextual Info: NATL SENICOND -CNENORY} 10E D I bSDiisy aohiST? e | National Semiconductor T -4 6 -1 3-25 - PRELIMINARY NMC27C020 2,097,152-Bit 256k x 8 UV Erasable CMOS PROM General Description Features The NMC27C020 Is a high-speed 2048k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited

nmc27c256

Abstract: NMC27C256Q NMC27C256Q250 NMC27C256QE NMC27C256Q25 national semiconductor 27c32 NMC27C256Q200 NMC27C256Q20 J28A NMC27C256Q 200
Contextual Info: NAT L S E MI C O N D MEMORY 31E b 5 G l 1 2 h Gü b 3 3 7 3 D T NMC27C256 National Semiconductor NMC27C256 262,144-Bit (32k x 8) UV Erasable CMOS PROM General Description Features The NMC27C256 is a high-speed 256k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited

AT27C512R-15DC

Abstract: AT-27C512R-12LM
Contextual Info: AT27C512R Features • Fast Head Access Time - 90 ns • Low Power CMOS Operation 100 jiA max. Standby 20 mA max. Active at 5 MHz • Wide Selection of JEDEC Standard Packages 28-Lead 600-mil Cerdlp and OTP Plastic DIP, SOIC, or TSOP 32-Pad LCC, 32-Lead JLCC and OTP PLCC

intel 27c512 eprom

Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
Contextual Info: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH *4 ■ In te l' T -V L -lS -tS 27C512 *T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode

27c32

Abstract: NMC27CP1280 NMC27C256 27c16 eprom 27C16 27C256 27C512 27C64 NMC27CP128Q200
Contextual Info: NMC27CP128 NATL SEMICOND {MEMORY} IDE D | b S Q H E b - _- OOt.l4fl4 □ | f_46-13-29 National Semiconductor NMC27CP128 131,072-Bit 16k x 8 UV Erasable CMOS PROM ) . General Description Features The NMC27CP128 is a high-speed 128k UV erasable and

27128 block diagram

Contextual Info: NM27C128 National Semiconductor NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C120 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured with National’s latest CMOS split gate EPROM

27C512-70

Abstract: 1N3064 27C512 27C512-150 CY27C512 CY27C512-150WC
Contextual Info: ?/ CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the